摘要:
A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method including the steps of successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by means of dry etching, and the rest of the plurality of the color filter pattern is formed by means of photolithography.
摘要:
A color imaging device includes a semiconductor substrate including a plurality of photoelectric transducers, and a color filter including a plurality of coloring layers provided to associate with the photoelectric transducers of the semiconductor substrate. Each of the coloring layers of the color filter including a side surface that is erected with respect to a surface of the semiconductor substrate, and an inclined surface that is continuous from an end of the side surface located in the opposite side of the semiconductor substrate toward an end portion of the coloring layer located in the opposite side of the semiconductor substrate. The coloring layers are arranged with their side surfaces being in contact with each other without a gap therebetween, and the end portion of the coloring layer has a curved surface shape protruding toward the opposite side of the corresponding photoelectric transducer.
摘要:
A solid-state imaging device includes a plurality of two-dimensionally arranged photo diodes and a plurality of microlenses having substantially hemispherical shapes which cover the respective photo diodes. The microlens has a multilayer structure including at least a transparent resin upper layer which forms at least a portion of the substantially hemispherical shape, and a colored lower layer provided on a portion of the transparent resin upper layer which is located above the photo diode, with an interface between the colored lower layer and the transparent resin upper layer having a shape conforming to a surface of the photo diode.
摘要:
A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method includes successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by dry etching, and the rest of the plurality of the color filter pattern is formed by photolithography.
摘要:
A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method includes successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by dry etching, and the rest of the plurality of the color filter pattern is formed by photolithography.
摘要:
A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method including the steps of successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by means of dry etching, and the rest of the plurality of the color filter pattern is formed by means of photolithography.
摘要:
A photovoltaic element, a light shielding portion, a planarized layer, a color filter, another planarized layer and an undercoat layer are formed successively on a semiconductor substrate, followed by forming resin lenses. The undercoat layer positioned between adjacent resin lenses is subjected to an etching treatment with the resin lenses used as a resist mask so as to form ditches extending in the X- and Y-directions and other ditches extending in the XY-direction. Further, a transparent resin layer having a predetermined thickness is formed to cover the resin lenses and the ditches, thereby obtaining a solid image-pickup device comprising a micro lens array including a plurality of micro lenses.
摘要:
A color imaging device includes a semiconductor substrate including a plurality of photoelectric transducers, and a color filter including a plurality of coloring layers provided to associate with the photoelectric transducers of the semiconductor substrate. Each of the coloring layers of the color filter including a side surface that is erected with respect to a surface of the semiconductor substrate, and an inclined surface that is continuous from an end of the side surface located in the opposite side of the semiconductor substrate toward an end portion of the coloring layer located in the opposite side of the semiconductor substrate. The coloring layers are arranged with their side surfaces being in contact with each other without a gap therebetween, and the end portion of the coloring layer has a curved surface shape protruding toward the opposite side of the corresponding photoelectric transducer.
摘要:
A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heat-flowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.
摘要:
A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heatflowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.