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公开(公告)号：US20080296566A1
公开(公告)日：2008-12-04
申请号：US12156213
申请日：2008-05-30
申请人： Keun-Kyu Song , Jung-Han Shin , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Min-Ho Yoon , Jung-Hun Noh
发明人： Keun-Kyu Song , Jung-Han Shin , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Min-Ho Yoon , Jung-Hun Noh
CPC分类号： H01L51/0545 , H01L51/0558
摘要： An organic thin film transistor substrate for a display device includes a gate line, a data line insulated from the gate line, at least two organic thin film transistors, each of which is connected between the gate line and the data line, and both of which are commonly connected to a main drain electrode, and a pixel electrode connected to the main drain electrode.
摘要翻译： 用于显示装置的有机薄膜晶体管基板包括栅极线，与栅极线绝缘的数据线，至少两个有机薄膜晶体管，每个有源薄膜晶体管连接在栅极线和数据线之间， 通常连接到主漏电极和连接到主漏电极的像素电极。
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公开(公告)号：US08252626B2
公开(公告)日：2012-08-28
申请号：US12820024
申请日：2010-06-21
申请人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
发明人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
摘要翻译： 一种薄膜晶体管阵列板的制造方法，包括形成栅电极，在栅电极上形成绝缘层，在绝缘层上依次形成下导电层和上导电层，蚀刻上导电层以形成第一 源电极和第一漏电极，蚀刻下导电层以形成第二源电极和第二漏电极，过蚀刻第二源电极和第二漏电极，以及在第二源电极和第二漏电极之间形成有机半导体 第二漏电极。
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公开(公告)号：US20100255633A1
公开(公告)日：2010-10-07
申请号：US12820024
申请日：2010-06-21
申请人： Seung-Hwan CHO , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
发明人： Seung-Hwan CHO , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
摘要翻译： 一种薄膜晶体管阵列板的制造方法，包括形成栅电极，在栅电极上形成绝缘层，在绝缘层上依次形成下导电层和上导电层，蚀刻上导电层以形成第一 源电极和第一漏电极，蚀刻下导电层以形成第二源电极和第二漏电极，过蚀刻第二源电极和第二漏电极，以及在第二源电极和第二漏电极之间形成有机半导体 第二漏电极。
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公开(公告)号：US20080078993A1
公开(公告)日：2008-04-03
申请号：US11864581
申请日：2007-09-28
申请人： Seung-Hwan CHO , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
发明人： Seung-Hwan CHO , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
摘要翻译： 一种薄膜晶体管阵列板的制造方法，包括形成栅电极，在栅电极上形成绝缘层，在绝缘层上依次形成下导电层和上导电层，蚀刻上导电层以形成第一 源电极和第一漏电极，蚀刻下导电层以形成第二源电极和第二漏电极，过蚀刻第二源电极和第二漏电极，以及在第二源电极和第二漏电极之间形成有机半导体 第二漏电极。
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公开(公告)号：US07768000B2
公开(公告)日：2010-08-03
申请号：US11864581
申请日：2007-09-28
申请人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
发明人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
摘要翻译： 一种薄膜晶体管阵列板的制造方法，包括形成栅电极，在栅电极上形成绝缘层，在绝缘层上依次形成下导电层和上导电层，蚀刻上导电层以形成第一 源电极和第一漏电极，蚀刻下导电层以形成第二源电极和第二漏电极，过蚀刻第二源电极和第二漏电极，以及在第二源电极和第二漏电极之间形成有机半导体 第二漏电极。
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公开(公告)号：US07952091B2
公开(公告)日：2011-05-31
申请号：US12347438
申请日：2008-12-31
申请人： Seon-Pil Jang , Jung-Han Shin , Min-Ho Yoon , Seong-Sik Shin , Jung-Hun Noh
发明人： Seon-Pil Jang , Jung-Han Shin , Min-Ho Yoon , Seong-Sik Shin , Jung-Hun Noh
IPC分类号： H01L51/00
CPC分类号： H01L51/0545 , H01L51/107
摘要： Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.
摘要翻译： 公开了一种有机薄膜晶体管及其制造方法。 有机薄膜晶体管包括栅电极，绝缘层，有机半导体层，保护层以及源极和漏极。 绝缘层位于栅电极上，有机半导体层位于绝缘层上。 保护层在有机半导体层上，并且包括用于暴露有机半导体层的电极图案部分。 源极和漏极在电极图案部分中并连接到有机半导体层。
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公开(公告)号：US20090230385A1
公开(公告)日：2009-09-17
申请号：US12347438
申请日：2008-12-31
申请人： Seon-Pil Jang , Jung-Han Shin , Min-Ho Yoon , Seong-Sik Shin , Jung-Hun Noh
发明人： Seon-Pil Jang , Jung-Han Shin , Min-Ho Yoon , Seong-Sik Shin , Jung-Hun Noh
IPC分类号： H01L51/10 , H01L51/40 , H01L29/786 , H01L21/336
CPC分类号： H01L51/0545 , H01L51/107
摘要： Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.
摘要翻译： 公开了一种有机薄膜晶体管及其制造方法。 有机薄膜晶体管包括栅电极，绝缘层，有机半导体层，保护层以及源极和漏极。 绝缘层位于栅电极上，有机半导体层位于绝缘层上。 保护层在有机半导体层上，并且包括用于暴露有机半导体层的电极图案部分。 源极和漏极在电极图案部分中并连接到有机半导体层。
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公开(公告)号：US07834348B2
公开(公告)日：2010-11-16
申请号：US12388973
申请日：2009-02-19
申请人： Min-Ho Yoon , Jung-Han Shin , Seon-Pil Jang
发明人： Min-Ho Yoon , Jung-Han Shin , Seon-Pil Jang
IPC分类号： H01L35/24
CPC分类号： H01L29/41733 , H01L27/124 , H01L27/3274 , H01L51/0545
摘要： The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.
摘要翻译： 本发明提供一种显示装置及其制造方法。 显示装置包括栅极线，与栅极线绝缘并与栅极线交叉的数据线，包括半导体层并连接到栅极线和数据线的薄膜晶体管，连接到薄膜晶体管的像素电极， 以及与薄膜晶体管的沟道区相邻的虚拟漏电极。 虚设漏电极不连接到像素电极。
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公开(公告)号：US20090224248A1
公开(公告)日：2009-09-10
申请号：US12388973
申请日：2009-02-19
申请人： Min-Ho Yoon , Jung-Han Shin , Seon-Pil Jang
发明人： Min-Ho Yoon , Jung-Han Shin , Seon-Pil Jang
CPC分类号： H01L29/41733 , H01L27/124 , H01L27/3274 , H01L51/0545
摘要： The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.
摘要翻译： 本发明提供一种显示装置及其制造方法。 显示装置包括栅极线，与栅极线绝缘并与栅极线交叉的数据线，包括半导体层并连接到栅极线和数据线的薄膜晶体管，连接到薄膜晶体管的像素电极， 以及与薄膜晶体管的沟道区相邻的虚拟漏电极。 虚设漏电极不连接到像素电极。
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10.发明授权公开(公告)号：US07858434B2
公开(公告)日：2010-12-28
申请号：US12196990
申请日：2008-08-22
申请人： Jung-Han Shin , Seon-Pil Jang , Min-Ho Yoon , Kyu-Young Kim
发明人： Jung-Han Shin , Seon-Pil Jang , Min-Ho Yoon , Kyu-Young Kim
IPC分类号： H01L21/00
CPC分类号： H01L51/0545
摘要： An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area.
摘要翻译： 有机薄膜晶体管基板包括基板，在基板的表面上的栅极线，在栅极线上绝缘的栅极绝缘层，栅极绝缘层上的数据线，连接到栅极线的有机薄膜晶体管，以及 所述数据线，包括有机半导体层的有机薄膜晶体管，至少部分位于所述数据线上的堤绝缘层，所述堤绝缘层包括限定像素区域的壁部分和形成的像素电极 在像素区域。
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