摘要:
A graphene sheet and a method of manufacturing the graphene sheet are provided. The method includes: growing a graphene sheet on a graphene growth support by applying carbon sources and heat to the graphene growth support, the graphene growth support including a carbonization catalyst; and forming at least one ripple on the graphene sheet by cooling at least one of the graphene growth support and the graphene sheet, wherein the graphene growth support and the graphene sheet have different thermal expansion coefficients.
摘要:
A touch panel comprising a first substrate; a second substrate disposed facing the first substrate; a first conductive layer disposed on at least one surface of the first substrate; a second conductive layer disposed on at least one surface of the second substrate; first electrodes electrically connected to the first conductive layer; and second electrodes electrically connected to the second conductive layer, wherein at least one of the first conductive layer and the second conductive layer comprises graphene.
摘要:
A touch panel comprising a first substrate; a second substrate disposed facing the first substrate; a first conductive layer disposed on at least one surface of the first substrate; a second conductive layer disposed on at least one surface of the second substrate; first electrodes electrically connected to the first conductive layer; and second electrodes electrically connected to the second conductive layer, wherein at least one of the first conductive layer and the second conductive layer comprises graphene.
摘要:
Provided are a method of manufacturing graphene, graphene manufactured by the method, a conductive thin film including the graphene, a transparent electrode comprising the graphene, and a radiating or heating device comprising the graphene. The method includes: preparing a graphene member including a base member, a hydrophilic oxide layer formed on the base member, a hydrophobic metal catalyst layer formed on the oxide layer, and graphene grown on the metal catalyst layer; applying water to the graphene member; separating the metal catalyst layer from the oxide layer; and removing the metal catalyst layer using an etching process.
摘要:
A semiconductor memory device having an improved fuse structure may include an interlayer insulating film on a semiconductor substrate, an opening in the interlayer insulating film, a vertical fuse that may conform to the opening, a fuse insulating film on the vertical fuse that may fill the opening, and metal wiring lines that may be electrically connected to the vertical fuse.
摘要:
A semiconductor memory device having an improved fuse structure may include an interlayer insulating film on a semiconductor substrate, an opening in the interlayer insulating film, a vertical fuse that may conform to the opening, a fuse insulating film on the vertical fuse that may fill the opening, and metal wiring lines that may be electrically connected to the vertical fuse.