公开(公告)号：US07344755B2

公开(公告)日：2008-03-18

申请号：US10646673

申请日：2003-08-21

申请人： Kevin L. Beaman ,  Ronald A. Weimer ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Trung T. Doan ,  Cem Basceri ,  David J. Kubista ,  Lingyi A. Zheng

发明人： Kevin L. Beaman ,  Ronald A. Weimer ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Trung T. Doan ,  Cem Basceri ,  David J. Kubista ,  Lingyi A. Zheng

IPC分类号： C23C16/00

CPC分类号： C23C16/45546 ,  C23C16/4404

摘要： The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by contemporaneously introducing first and second pretreatment precursors (e.g., TiCl4 and NH3) to deposit a pretreatment material on a the chamber surface. After the pretreatment, the first microfeature workpiece may be placed in the chamber and TiN may be deposited on the microfeature workpiece by alternately introducing quantities of first and second deposition precursors.

摘要翻译： 本公开提供了可用于处理微特征工件（例如半导体晶片）的方法和装置。 一些方面在分批过程中沉积TiN具有特殊的用途。 一个实施方案包括通过同时引入第一和第二预处理前体（例如，TiCl 4和NH 3）来预处理处理室的表面，以将预处理材料沉积在室表面上 。 在预处理之后，可以将第一微特征工件放置在腔室中，并且可以通过交替地引入量的第一和第二沉积前体将TiN沉积在微特征工件上。

公开(公告)号：US07235138B2

公开(公告)日：2007-06-26

申请号：US10646607

申请日：2003-08-21

申请人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Ronald A. Weimer ,  David J. Kubista ,  Kevin L. Beaman ,  Cem Basceri

发明人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Ronald A. Weimer ,  David J. Kubista ,  Kevin L. Beaman ,  Cem Basceri

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/4583 ,  C23C16/45546 ,  C23C16/45578 ,  Y10S206/832

摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

摘要翻译： 本公开描述了用于处理微特征工件的装置和方法，例如通过使用原子层沉积在微电子半导体上沉积材料。 这些设备中的一些包括微型工件保持器，其包括气体分配器。 一个示例性实施例提供了适于保持多个微特征工件的微特征工件保持器。 该工件保持器包括多个工件支撑件和气体分配器。 工件支撑件适于以间隔的关系支撑多个微特征工件以限定与每个微特征工件的表面相邻的工艺空间。 气体分配器包括入口和多个出口，其中每个出口被定位成将处理气体流引导到处理空间中的一个中。

公开(公告)号：US07056806B2

公开(公告)日：2006-06-06

申请号：US10665099

申请日：2003-09-17

申请人： Cem Basceri ,  Trung T. Doan ,  Ronald A. Weimer ,  Kevin L. Beaman ,  Lyle D. Breiner ,  Lingyi A. Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David J. Kubista

发明人： Cem Basceri ,  Trung T. Doan ,  Ronald A. Weimer ,  Kevin L. Beaman ,  Lyle D. Breiner ,  Lingyi A. Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David J. Kubista

IPC分类号： H01L21/76 ,  H01L21/20 ,  H01L21/36 ,  H01L21/04 ,  H01L21/261

CPC分类号： C23C16/45527 ,  C23C16/34 ,  C23C16/45546

摘要： The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.

公开(公告)号：US08384192B2

公开(公告)日：2013-02-26

申请号：US13047430

申请日：2011-03-14

申请人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Kevin L. Beaman ,  Ronald A. Weimer ,  Cem Basceri ,  David J. Kubista

发明人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Kevin L. Beaman ,  Ronald A. Weimer ,  Cem Basceri ,  David J. Kubista

IPC分类号： H01L21/02

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/84

摘要： The present disclosure provides small scale capacitors (e.g., DRAM capacitors) and methods of forming such capacitors. One exemplary implementation provides a method of fabricating a capacitor that includes sequentially forming a first electrode, a dielectric layer, and a second electrode. At least one of the electrodes may be formed by a) reacting two precursors to deposit a first conductive layer at a first deposition rate, and b) depositing a second conductive layer at a second, lower deposition rate by depositing a precursor layer of one precursor at least one monolayer thick and exposing that precursor layer to another precursor to form a nanolayer reaction product. The second conductive layer may be in contact with the dielectric layer and have a thickness of no greater than about 50 Å.

摘要翻译： 本公开提供小尺寸电容器（例如，DRAM电容器）以及形成这种电容器的方法。 一个示例性实施例提供了一种制造电容器的方法，该电容器包括顺序地形成第一电极，电介质层和第二电极。 可以通过以下方式形成至少一个电极：a）使两个前体反应以第一沉积速率沉积第一导电层，以及b）通过沉积一个前体的前体层以第二较低沉积速率沉积第二导电层 至少一层单层，并将该前体层暴露于另一种前体以形成纳米层反应产物。 第二导电层可以与介电层接触并具有不大于约的厚度。

公开(公告)号：US07771537B2

公开(公告)日：2010-08-10

申请号：US11418337

申请日：2006-05-04

申请人： Kevin L. Beaman ,  Trung T. Doan ,  Lyle D. Breiner ,  Ronald A. Weimer ,  Er-Xuan Ping ,  David J. Kubista ,  Cem Basceri ,  Lingyi A. Zheng

发明人： Kevin L. Beaman ,  Trung T. Doan ,  Lyle D. Breiner ,  Ronald A. Weimer ,  Er-Xuan Ping ,  David J. Kubista ,  Cem Basceri ,  Lingyi A. Zheng

IPC分类号： C23C16/00

CPC分类号： C23C16/00 ,  C23C16/46

摘要： The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

摘要翻译： 本公开提供了用于控制温度的方法和系统。 该方法在沉积工艺中控制温度，例如通过CVD沉积热反射材料方面具有特别的用途。 一个示例性实施例提供了一种方法，其涉及监测沉积室外的第一温度和沉积室内的第二温度。 通过（a）将控制温度与目标温度进行比较，可以根据斜坡分布来增加沉积室中的内部温度，以及（b）响应于比较的结果，选择性地将热量输送到沉积室。 目标温度可以根据斜坡分布来确定，但是一个实现中的控制温度在第一温度和第二温度之间交替。

公开(公告)号：US20100282164A1

公开(公告)日：2010-11-11

申请号：US12840153

申请日：2010-07-20

申请人： Kevin L. Beaman ,  Trung T. Doan ,  Lyle D. Breiner ,  Ronald A. Weimer ,  Er-Xuan Ping ,  David J. Kubista ,  Cem Basceri ,  Lingyi A. Zheng

发明人： Kevin L. Beaman ,  Trung T. Doan ,  Lyle D. Breiner ,  Ronald A. Weimer ,  Er-Xuan Ping ,  David J. Kubista ,  Cem Basceri ,  Lingyi A. Zheng

IPC分类号： C23C16/00 ,  B05C11/00

CPC分类号： C23C16/00 ,  C23C16/46

摘要： The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

摘要翻译： 本公开提供了用于控制温度的方法和系统。 该方法在沉积工艺中控制温度，例如通过CVD沉积热反射材料方面具有特别的用途。 一个示例性实施例提供了一种方法，其涉及监测沉积室外的第一温度和沉积室内的第二温度。 通过（a）将控制温度与目标温度进行比较，可以根据斜坡分布来增加沉积室中的内部温度，以及（b）响应于比较的结果，选择性地将热量输送到沉积室。 目标温度可以根据斜坡分布来确定，但是一个实现中的控制温度在第一温度和第二温度之间交替。

公开(公告)号：US07422635B2

公开(公告)日：2008-09-09

申请号：US10652461

申请日：2003-08-28

申请人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Kevin L. Beaman ,  Ronald A. Weimer ,  David J. Kubista ,  Cem Basceri

发明人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Kevin L. Beaman ,  Ronald A. Weimer ,  David J. Kubista ,  Cem Basceri

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： C23C16/45546 ,  C23C16/45578 ,  C23C16/4583

摘要： The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas may be delivered to an elongate first delivery conduit that includes a plurality of outlets spaced along a length of the conduit. A first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced. A second gas may be delivered to an elongate second delivery conduit that also has outlets spaced along its length. A second gas flow of the second gas may be directed by the outlets to flow into the process spaces along a second vector that is transverse to the first direction.

摘要翻译： 本公开提出了用于批量处理微特征工件（例如半导体晶片等）的几种系统和方法。 一个示例性实施方案提供了一种在间隔开的关系中将反应产物沉积在处理室中的一批工件的每一个上的方法。 第一气体可以被输送到细长的第一输送管道，该第一输送管道包括沿管道的长度间隔开的多个出口。 第一气流可以由出口引导，沿着横向于工件间隔开的方向的第一向量流入相邻工件之间的至少一个工艺空间。 第二气体可以被输送到细长的第二输送管道，该第二输送管道也具有沿其长度间隔开的出口。 第二气体的第二气流可以由出口引导，沿着横向于第一方向的第二向量流入处理空间。

公开(公告)号：US07279398B2

公开(公告)日：2007-10-09

申请号：US11327794

申请日：2006-01-06

申请人： Cem Basceri ,  Trung T. Doan ,  Ronald A. Weimer ,  Kevin L. Beaman ,  Lyle D. Breiner ,  Lingyi A. Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David J. Kubista

发明人： Cem Basceri ,  Trung T. Doan ,  Ronald A. Weimer ,  Kevin L. Beaman ,  Lyle D. Breiner ,  Lingyi A. Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David J. Kubista

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/302 ,  H01L21/461 ,  H01L21/469

CPC分类号： C23C16/45527 ,  C23C16/34 ,  C23C16/45546

摘要： The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.

摘要翻译： 本公开提供了用于在批次的微特征工件上沉积材料中有用的方法和装置。 一个实施方案提供了一种方法，其中一定量的第一前体气体以第一封壳压力被引入外壳。 当以第一流速引入吹扫气体时，外壳内的压力降低到第二封闭压力。 第二外壳压力可接近或等于处理系统在第一流量下的稳态基础压力。 在降低压力之后，吹扫气体流量可以增加到第二流量，并且外壳压力可以增加到第三外壳压力。 此后，第二前体气体的流动可以在第四封闭压力下以外壳内的压力引入; 第三外壳压力理想地在第四外壳压力的约10％内。

公开(公告)号：US08518184B2

公开(公告)日：2013-08-27

申请号：US12840153

申请日：2010-07-20

申请人： Kevin L. Beaman ,  Trung T. Doan ,  Lyle D. Breiner ,  Ronald A. Weimer ,  Er-Xuan Ping ,  David J. Kubista ,  Cem Basceri ,  Lingyi A. Zheng

发明人： Kevin L. Beaman ,  Trung T. Doan ,  Lyle D. Breiner ,  Ronald A. Weimer ,  Er-Xuan Ping ,  David J. Kubista ,  Cem Basceri ,  Lingyi A. Zheng

IPC分类号： C23C16/00

CPC分类号： C23C16/00 ,  C23C16/46

摘要： The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

摘要翻译： 本公开提供了用于控制温度的方法和系统。 该方法在沉积工艺中控制温度，例如通过CVD沉积热反射材料方面具有特别的用途。 一个示例性实施例提供了一种方法，其涉及监测沉积室外的第一温度和沉积室内的第二温度。 通过（a）将控制温度与目标温度进行比较，可以根据斜坡分布来增加沉积室中的内部温度，以及（b）响应于比较的结果，选择性地将热量输送到沉积室。 目标温度可以根据斜坡分布来确定，但是一个实现中的控制温度在第一温度和第二温度之间交替。

公开(公告)号：US20110163416A1

公开(公告)日：2011-07-07

申请号：US13047430

申请日：2011-03-14

申请人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Kevin L. Beaman ,  Ronald A. Weimer ,  Cem Basceri ,  David J. Kubista

发明人： Lingyi A. Zheng ,  Trung T. Doan ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Kevin L. Beaman ,  Ronald A. Weimer ,  Cem Basceri ,  David J. Kubista

IPC分类号： H01L29/92 ,  G06F19/00

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/84

摘要： The present disclosure provides small scale capacitors (e.g., DRAM capacitors) and methods of forming such capacitors. One exemplary implementation provides a method of fabricating a capacitor that includes sequentially forming a first electrode, a dielectric layer, and a second electrode. At least one of the electrodes may be formed by a) reacting two precursors to deposit a first conductive layer at a first deposition rate, and b) depositing a second conductive layer at a second, lower deposition rate by depositing a precursor layer of one precursor at least one monolayer thick and exposing that precursor layer to another precursor to form a nanolayer reaction product. The second conductive layer may be in contact with the dielectric layer and have a thickness of no greater than about 50 Å.

摘要翻译： 本公开提供小尺寸电容器（例如，DRAM电容器）以及形成这种电容器的方法。 一个示例性实施例提供了一种制造电容器的方法，该电容器包括顺序地形成第一电极，电介质层和第二电极。 可以通过以下方式形成至少一个电极：a）使两个前体反应以第一沉积速率沉积第一导电层，以及b）通过沉积一个前体的前体层以第二较低沉积速率沉积第二导电层 至少一层单层，并将该前体层暴露于另一种前体以形成纳米层反应产物。 第二导电层可以与介电层接触并具有不大于约的厚度。