Test structures and methods for monitoring or controlling a semiconductor fabrication process
    1.
    发明授权
    Test structures and methods for monitoring or controlling a semiconductor fabrication process 失效
    用于监测或控制半导体制造工艺的测试结构和方法

    公开(公告)号:US07678516B2

    公开(公告)日:2010-03-16

    申请号:US11187609

    申请日:2005-07-22

    IPC分类号: G03F7/00 G01R31/26 H01L21/66

    摘要: Various test structures and methods for monitoring or controlling a semiconductor fabrication process are provided. One test structure formed on a wafer as a monitor for a lithography process includes a bright field target that includes first grating structures. The test structure also includes a dark field target that includes second grating structures. The first and second grating structures have one or more characteristics that are substantially the same as one or more characteristics of device structures formed on the wafer. In addition, the test structure includes a phase shift target having characteristics that are substantially the same as the characteristics of the bright field or dark field target except that grating structures of the phase shift target are shifted in optical phase from the first or second grating structures. One or more characteristics of the targets can be measured and used to determine parameter(s) of the lithography process.

    摘要翻译: 提供了用于监测或控制半导体制造工艺的各种测试结构和方法。 在作为光刻处理的监视器的晶片上形成的一个测试结构包括包括第一光栅结构的明场目标。 测试结构还包括包括第二光栅结构的暗场目标。 第一和第二光栅结构具有与形成在晶片上的器件结构的一个或多个特性基本上相同的一个或多个特性。 此外,测试结构包括具有与亮场或暗场目标的特性基本相同的特性的相移靶,除了相移靶的光栅结构从光学相位从第一或第二光栅结构 。 可以测量目标的一个或多个特性并用于确定光刻工艺的参数。

    Test structures and methods for monitoring or controlling a semiconductor fabrication process
    2.
    发明申请
    Test structures and methods for monitoring or controlling a semiconductor fabrication process 失效
    用于监测或控制半导体制造工艺的测试结构和方法

    公开(公告)号:US20060024850A1

    公开(公告)日:2006-02-02

    申请号:US11187609

    申请日:2005-07-22

    IPC分类号: H01L21/66 G01R31/26

    摘要: Various test structures and methods for monitoring or controlling a semiconductor fabrication process are provided. One test structure formed on a wafer as a monitor for a lithography process includes a bright field target that includes first grating structures. The test structure also includes a dark field target that includes second grating structures. The first and second grating structures have one or more characteristics that are substantially the same as one or more characteristics of device structures formed on the wafers. In addition, the test structure includes a phase shift target having characteristics that are substantially the same as the characteristics of the bright field or dark field target except that grating structures of the phase shift target are shifted in optical phase from the first or second grating structures. One or more characteristics of the targets can be measured and used to determine parameter(s) of the lithography process.

    摘要翻译: 提供了用于监测或控制半导体制造工艺的各种测试结构和方法。 在作为光刻处理的监视器的晶片上形成的一个测试结构包括包括第一光栅结构的明场目标。 测试结构还包括包括第二光栅结构的暗场目标。 第一和第二光栅结构具有与形成在晶片上的器件结构的一个或多个特性基本上相同的一个或多个特性。 此外,测试结构包括具有与亮场或暗场目标的特性基本相同的特性的相移靶,除了相移靶的光栅结构从光学相位从第一或第二光栅结构 。 可以测量目标的一个或多个特性并用于确定光刻工艺的参数。

    Method and system for optimizing alignment performance in a fleet of exposure tools
    3.
    发明授权
    Method and system for optimizing alignment performance in a fleet of exposure tools 有权
    用于优化曝光工具的对准性能的方法和系统

    公开(公告)号:US07679069B2

    公开(公告)日:2010-03-16

    申请号:US11686871

    申请日:2007-03-15

    IPC分类号: G21K1/00

    摘要: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.

    摘要翻译: 用于优化曝光系统队列中的对准性能的方法涉及表征曝光系统中的每个曝光系统,以产生与每个曝光系统相关联的一组独特的失真曲线。 一组有特色的失真简档存储在数据库中。 提供具有形成在其上的参考图案的晶片用于进一步的图案制造,并且从车队中选择曝光系统以在晶片上制造下一层。 使用不同的失真曲线来调整所选曝光系统的线性和高阶参数以对参考图案的失真进行建模。 一旦调整曝光系统,就用于在晶片上形成平版印刷图案。

    METHOD AND SYSTEM FOR OPTIMIZING ALIGNMENT PERFORMANCE IN A FLEET OF EXPOSURE TOOLS
    4.
    发明申请
    METHOD AND SYSTEM FOR OPTIMIZING ALIGNMENT PERFORMANCE IN A FLEET OF EXPOSURE TOOLS 有权
    在接触工具中优化对准性能的方法和系统

    公开(公告)号:US20080073589A1

    公开(公告)日:2008-03-27

    申请号:US11686871

    申请日:2007-03-15

    IPC分类号: G21K5/10

    摘要: A method for optimizing alignment performance in a fleet of exposure systems involves characterizing each exposure system in a fleet of exposure systems to generate a set of distinctive distortion profiles associated with each exposure system. The set of distinctive distortion profiles are stored in a database. A wafer having reference pattern formed thereon is provided for further pattern fabrication and an exposure system is selected from the fleet to fabricate a next layer on the wafer. Linear and higher order parameters of the selected exposure system are adjusted using the distinctive distortion profiles to model the distortion of the reference pattern. Once the exposure system is adjusted, it is used to form a lithographic pattern on the wafer.

    摘要翻译: 用于优化曝光系统队列中的对准性能的方法涉及表征曝光系统中的每个曝光系统,以产生与每个曝光系统相关联的一组独特的失真曲线。 一组有特色的失真简档存储在数据库中。 提供具有形成在其上的参考图案的晶片用于进一步的图案制造,并且从车队中选择曝光系统以在晶片上制造下一层。 使用不同的失真曲线来调整所选曝光系统的线性和高阶参数以对参考图案的失真进行建模。 一旦调整曝光系统,就用于在晶片上形成平版印刷图案。