公开(公告)号：US20070008105A1

公开(公告)日：2007-01-11

申请号：US11147973

申请日：2005-06-08

申请人： Kevin Verrier ,  David Bernhardt ,  Jerry Negrotti ,  Donald Polner

发明人： Kevin Verrier ,  David Bernhardt ,  Jerry Negrotti ,  Donald Polner

IPC分类号： G08B19/00

CPC分类号： H01L21/67259 ,  H01L21/68

摘要： Method and apparatus for use in setting up workpiece treatment or processing equipment. A disclosed system processes silicon wafers that are treated during processing steps in producing semiconductor integrated circuits. The processing equipment includes a wafer support that supports a wafer in a treatment region during wafer processing. A housing provides a controlled environment within the housing interior for processing the wafer on the wafer support. A mechanical transfer system transports wafers to and from the support. A wafer simulator is used to simulate wafer movement and includes a pressure sensor for monitoring contact between the simulator and the wafer transfer and support equipment. In one illustrated embodiment the wafer simulator is generally circular and includes three equally spaced pressure sensors for monitoring contact with wafer transport and support equipment.

摘要翻译： 用于设置工件处理或加工设备的方法和装置。 所公开的系统处理在制造半导体集成电路的处理步骤期间处理的硅晶片。 处理设备包括在晶片处理期间在处理区域中支撑晶片的晶片支撑件。 壳体在壳体内部提供受控的环境，用于在晶片支撑件上处理晶片。 机械传输系统将晶片传送到支撑件和从支撑件传送晶片。 使用晶片模拟器来模拟晶片移动，并且包括用于监测模拟器与晶片转移和支撑设备之间的接触的压力传感器。 在一个所示实施例中，晶片模拟器通常是圆形的并且包括三个等间隔的压力传感器，用于监测与晶片输送和支撑设备的接触。

公开(公告)号：US08481960B2

公开(公告)日：2013-07-09

申请号：US13167399

申请日：2011-06-23

申请人： Svetlana Radovanov ,  Jason Schaller ,  Richard White ,  Kevin Verrier ,  James Blanchette ,  Bon-Woong Koo ,  Eric Hermanson ,  Kevin Daniels

发明人： Svetlana Radovanov ,  Jason Schaller ,  Richard White ,  Kevin Verrier ,  James Blanchette ,  Bon-Woong Koo ,  Eric Hermanson ,  Kevin Daniels

IPC分类号： G21K1/08 ,  H01J3/14 ,  H01J3/26 ,  H01J49/42

CPC分类号： H01J37/12 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/032 ,  H01J2237/0475

摘要： A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.

摘要翻译： 公开了用于控制离子束的系统和方法。 公开了用于离子注入机的减速透镜。 透镜可以包括抑制电极，第一和第二聚焦电极以及第一和第二屏蔽。 屏蔽件可以位于抑制电极的上部和下部之间。 第一和第二屏蔽件位于离子注入机的第一聚焦电极和端电极之间。 如此定位，第一和第二屏蔽件保护所述第一和第二聚焦电极的支撑表面不会沉积从所述离子束产生的回流颗粒。 在一些实施例中，第一和第二聚焦电极可以是可调节的，以使电极表面相对于离子束的方向被调整。 通过调整聚焦电极的角度，可以控制离子束的平行度。 描述和要求保护其他实施例。