摘要:
An ODT circuit is activated/deactivated in response to a latency control signal or a clock enable signal. The ODT circuit includes an ODT control circuit and an ODT section. The ODT control circuit determines an ODT status based on a read latency control signal (RL) and/or a write latency control signal (WL) to generate an ODT control signal. The ODT section is activated/deactivated in response to the ODT control signal.
摘要:
A nondestructive inspection method of testing insulators using frequency resonance function that can inspect an anomaly of an insulator by vibrating the insulator with a force having the characteristic of white noise, measuring the change in motion of the insulator according to the vibration and calculating the frequency resonance function of the insulator is disclosed.
摘要:
A nondestructive inspection method of testing insulators using frequency resonance function that can inspect an anomaly of an insulator by vibrating the insulator with a force having the characteristic of white noise, measuring the change in motion of the insulator according to the vibration and calculating the frequency resonance function of the insulator is disclosed.
摘要:
A handling system for an in-core detector thimble tube of a reactor is disclosed. The handling system serves to withdraw and retract a thimble tube so as to provide a movement path of a movable detector used to measure a neutron flux within a reactor. For this, the handling system basically includes a thimble tube withdrawing/retracting device, which grips the thimble tube using a plurality of synthetic resin pinch rollers to withdraw and retract the thimble tube without any damage to the thimble tube, a thimble tube tensioning device, which applies a constant tensile force to the thimble tube to prevent the thimble tube from shaking or bending upon withdrawing/retracting operations, and a thimble tube platform, which temporarily keeps the withdrawn thimble tube at a fixed position without a risk of shaking of the thimble tube and provides a movement path of the thimble tube tensioning device. With automatic withdrawal/retraction of the thimble tube without damage provides advantages of an extended thimble tube exchange interval, improved safety of system facilities, reduced labor costs and working time, and reduced worker radiation exposure, shortened precaution/maintenance period, and enhanced reactor use efficiency.
摘要:
An organic light emitting display device having multiple emission layers is provided, in which an organic charge transport layer is interposed between the emission layers to enhance interfacial properties between layers, and thus a stable process is ensured. Further, a hole transport layer and an electron transport layer are formed of an organic material like the charge transport layer, thereby simplifying the process.
摘要:
An organic light emitting device is disclosed that may include a first electrode, a hole injecting layer, a hole transporting layer, an emitting layer, and a second electrode, wherein a ratio of thickness between the hole injecting layer and the hole transporting layer is in a range of about 1:1 to about 1:10. Since the relative thicknesses of the hole injecting layer and the hole transporting layer are controlled, leakage current in the organic light emitting device decreases. As a result, the electrical characteristics and the testability of the organic light emitting device may be improved.
摘要:
A static random access memory cell having a plurality of active regions defined on a semiconductor substrate, includes a plurality of first bulk transistors having a first common gate electrode and first impurity-doped regions, the first common gate electrode and first impurity-doped regions being formed on a portion of the active regions; a plurality of second bulk transistors spaced from the first bulk transistors, the second bulk transistors including a second common gate electrode and second impurity-doped regions, the second common gate electrode and second impurity-doped regions being formed on a portion of the active regions; and a plurality of thin film transistors formed on the second bulk transistors and including the second common gate electrode and a conductive layer formed above the second common gate electrode, wherein the conductive layer overlaps and is substantially coextensive with the second common gate electrode.
摘要:
A method of fabricating an organic light emitting display is provided, in which, a first electrode is formed above a substrate having first and second regions, respectively, an emission layer is formed in the first and second regions, a second electrode is formed on the emission layer in the first and second regions, and a reflecting layer pattern is selectively formed on the second electrode in the second region.
摘要:
An organic electroluminescent display device (OELD) that prevents particles from creating blind spots by forming a recess or a groove in the surface of an insulating layer that covers edges of a pixel electrode. The OELD includes a lower electrode arranged on a substrate, an insulating layer arranged on the substrate, the insulating layer having an aperture adapted to expose a portion of the lower electrode, an organic layer arranged on the exposed portion of the lower electrode, and an upper electrode arranged on the substrate, wherein the insulating layer includes a recess and/or a groove in its surface.
摘要:
An organic light emitting display device and a method of fabricating the same are provided. The device includes: a substrate having a first pixel region, a second pixel region and a third pixel region; a first electrode disposed on the substrate; an organic emission layer disposed on the first electrode; a second electrode disposed on the organic emission layer; and a first organic layer and a second organic layer disposed between the first electrode and the organic emission layer. The first organic layer and the second organic layer have a combined thickness of approximately 500 to 700 Å or approximately 2000 to 2400 Å in the first pixel region, approximately 1600 to 2000 Å in the second pixel region, and approximately 200 to 400 Å in the third pixel region.