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公开(公告)号:US08034680B2
公开(公告)日:2011-10-11
申请号:US12457925
申请日:2009-06-25
申请人: Kihwan Kim , Youngsoo Park , Junghyun Lee , Changjung Kim , Bosoo Kang
发明人: Kihwan Kim , Youngsoo Park , Junghyun Lee , Changjung Kim , Bosoo Kang
IPC分类号: H01L21/8234
CPC分类号: H01L27/2481 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要: Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device.
摘要翻译: 提供了使用一个或多个不含氢作为构成元素的源材料形成的存储器件以及制造存储器件的方法。
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公开(公告)号:US20090302315A1
公开(公告)日:2009-12-10
申请号:US12379719
申请日:2009-02-27
申请人: Changbum Lee , Youngsoo Park , Myoungjae Lee , Bosoo Kang , Seungeon Ahn , Kihwan Kim
发明人: Changbum Lee , Youngsoo Park , Myoungjae Lee , Bosoo Kang , Seungeon Ahn , Kihwan Kim
CPC分类号: H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/147
摘要: A resistive random access memory (RRAM) includes a switch region formed of a material having bi-polar properties; and a memory resistor formed of a material having uni-polar properties. The RRAM further includes a lower electrode formed below the switch region; an upper electrode formed on the memory resistor; and an intermediate electrode formed between the switch region and the memory resistor.
摘要翻译: 电阻随机存取存储器(RRAM)包括由具有双极特性的材料形成的开关区域; 以及由具有单极性的材料形成的记忆电阻。 RRAM还包括形成在开关区域下方的下电极; 形成在记忆电阻上的上电极; 以及形成在开关区域和存储电阻器之间的中间电极。
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公开(公告)号:US08389344B2
公开(公告)日:2013-03-05
申请号:US12659148
申请日:2010-02-26
申请人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
发明人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
IPC分类号: H01L21/00
CPC分类号: H01L29/7869 , H01L29/66969
摘要: Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.
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公开(公告)号:US08194053B2
公开(公告)日:2012-06-05
申请号:US12385567
申请日:2009-04-13
申请人: Changjung Kim , Youngsoo Park
发明人: Changjung Kim , Youngsoo Park
IPC分类号: G06F3/043
CPC分类号: G06F3/0436
摘要: A touch panel may include a plurality of piezoelectric nanowires between a plurality of first transparent electrodes and plurality second transparent electrodes that cross each other; an ultrasonic wave generator configured to generate ultrasonic waves from the piezoelectric nanowires; and at least one ultrasonic wave echo sensor configured to detect ultrasonic waves that are generated from the plurality of piezoelectric nanowires and return to the plurality of piezoelectric nanowires after colliding with an object approaching the plurality of piezoelectric nanowires.
摘要翻译: 触摸面板可以包括在多个第一透明电极和彼此交叉的多个第二透明电极之间的多个压电纳米线; 超声波发生器,被配置为从压电纳米线产生超声波; 以及至少一个超声波回波传感器,被配置为检测从所述多个压电纳米线产生的超声波,并且在与接近所述多个压电纳米线的物体碰撞之后返回到所述多个压电纳米线。
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公开(公告)号:US07799622B2
公开(公告)日:2010-09-21
申请号:US12320627
申请日:2009-01-30
申请人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
发明人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
IPC分类号: H01L21/00
CPC分类号: H01L29/7869 , H01L29/66969
摘要: Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.
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公开(公告)号:US20090305468A1
公开(公告)日:2009-12-10
申请号:US12320627
申请日:2009-01-30
申请人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
发明人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
IPC分类号: H01L21/336
CPC分类号: H01L29/7869 , H01L29/66969
摘要: Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.
摘要翻译: 提供了使用透明氧化物半导体作为沟道材料的氧化物半导体薄膜晶体管的制造方法。 氧化物半导体薄膜晶体管的制造方法包括在沟道层上形成钝化层,在约100℃以上的温度下进行1小时以上的退火处理。
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公开(公告)号:US20100159642A1
公开(公告)日:2010-06-24
申请号:US12659148
申请日:2010-02-26
申请人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
发明人: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
IPC分类号: H01L21/336 , H01L21/04
CPC分类号: H01L29/7869 , H01L29/66969
摘要: Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.
摘要翻译: 提供了使用透明氧化物半导体作为沟道材料的氧化物半导体薄膜晶体管的制造方法。 氧化物半导体薄膜晶体管的制造方法包括在沟道层上形成钝化层,在约100℃以上的温度下进行1小时以上的退火处理。
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公开(公告)号:US20100013797A1
公开(公告)日:2010-01-21
申请号:US12385567
申请日:2009-04-13
申请人: Changjung Kim , Youngsoo Park
发明人: Changjung Kim , Youngsoo Park
IPC分类号: G06F3/042
CPC分类号: G06F3/0436
摘要: A touch panel may include a plurality of piezoelectric nanowires between a plurality of first transparent electrodes and plurality second transparent electrodes that cross each other; an ultrasonic wave generator configured to generate ultrasonic waves from the piezoelectric nanowires; and at least one ultrasonic wave echo sensor configured to detect ultrasonic waves that are generated from the plurality of piezoelectric nanowires and return to the plurality of piezoelectric nanowires after colliding with an object approaching the plurality of piezoelectric nanowires.
摘要翻译: 触摸面板可以包括在多个第一透明电极和彼此交叉的多个第二透明电极之间的多个压电纳米线; 超声波发生器,被配置为从压电纳米线产生超声波; 以及至少一个超声波回波传感器,被配置为检测从所述多个压电纳米线产生的超声波,并且在与接近所述多个压电纳米线的物体碰撞之后返回到所述多个压电纳米线。
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公开(公告)号:US20090309843A1
公开(公告)日:2009-12-17
申请号:US12289936
申请日:2008-11-07
申请人: Sangwook Kim , Youngsoo Park , Changjung Kim
发明人: Sangwook Kim , Youngsoo Park , Changjung Kim
IPC分类号: G06F3/041
CPC分类号: G06F3/0414
摘要: Provided is a touch panel using a zinc oxide (ZnO) nano wire. The touch panel may include a first transparent substrate, a first transparent electrode layer on the first transparent substrate, a light transmissive nano wire layer including a plurality of piezoelectric nano wires that may be arranged on the first transparent electrode layer so as to be perpendicular to the first transparent electrode layer, a second transparent electrode layer on the nano wire layer, and a second transparent substrate on the second transparent electrode layer.
摘要翻译: 提供了使用氧化锌(ZnO)纳米线的触摸面板。 触摸面板可以包括第一透明衬底,第一透明衬底上的第一透明电极层,透光纳米线层,其包括可以布置在第一透明电极层上的多个压电纳米线,以便垂直于 第一透明电极层,纳米线层上的第二透明电极层和第二透明电极层上的第二透明基板。
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公开(公告)号:US08120587B2
公开(公告)日:2012-02-21
申请号:US12289936
申请日:2008-11-07
申请人: Sangwook Kim , Youngsoo Park , Changjung Kim
发明人: Sangwook Kim , Youngsoo Park , Changjung Kim
IPC分类号: G06F3/041
CPC分类号: G06F3/0414
摘要: Provided is a touch panel using a zinc oxide (ZnO) nano wire. The touch panel may include a first transparent substrate, a first transparent electrode layer on the first transparent substrate, a light transmissive nano wire layer including a plurality of piezoelectric nano wires that may be arranged on the first transparent electrode layer so as to be perpendicular to the first transparent electrode layer, a second transparent electrode layer on the nano wire layer, and a second transparent substrate on the second transparent electrode layer.
摘要翻译: 提供了使用氧化锌(ZnO)纳米线的触摸面板。 触摸面板可以包括第一透明衬底,第一透明衬底上的第一透明电极层,透光纳米线层,其包括可以布置在第一透明电极层上的多个压电纳米线,以便垂直于 第一透明电极层,纳米线层上的第二透明电极层和第二透明电极层上的第二透明基板。
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