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    Nonvolatile semiconductor memory device
    1.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US06888751B2

    公开(公告)日：2005-05-03

    申请号：US10364342

    申请日：2003-02-12

    申请人： Kiichi Makuta ,  Akihiro Fujita ,  Hideo Kasai ,  Masashii Wada ,  Atsushi Toukairin

    发明人： Kiichi Makuta ,  Akihiro Fujita ,  Hideo Kasai ,  Masashii Wada ,  Atsushi Toukairin

    IPC分类号： G01R31/28 ,  G06F12/16 ,  G11C16/02 ,  G11C16/06 ,  G11C29/00 ,  G11C29/04 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C16/04

    CPC分类号： G11C29/789

    摘要： A nonvolatile semiconductor memory device includes a memory array which comprises a plurality of memory cells of a type wherein predetermined voltages are applied to selected memory cells to change their threshold voltages, whereby information are stored therein according to the difference between the threshold voltages, and whose some memory cells are used as spare memory cells. The nonvolatile semiconductor memory device is provided with a latch circuit connected to each bit line of the memory array through a transmission switch. The memory array is capable of storing therein at least substitutional information for replacing a defective bit by the spare memory cell. The substitutional information is transferred from the memory array to the latch circuit through the transmission switch and held in the latch circuit.

    摘要翻译： 非易失性半导体存储器件包括存储器阵列，其包括多种存储单元，其中预定电压被施加到所选择的存储器单元以改变其阈值电压，由此根据阈值电压之间的差异存储信息，并且其中 一些存储单元被用作备用存储单元。 非易失性半导体存储器件设置有通过传输开关连接到存储器阵列的每个位线的锁存电路。 存储器阵列能够至少存储用于由备用存储单元替换缺陷位的替换信息。 替代信息通过传输开关从存储器阵列传送到锁存电路并保持在锁存电路中。

    Nonvolatile semiconductor memory device
    2.
    发明授权
    Nonvolatile semiconductor memory device 有权

    公开(公告)号：US06556479B2

    公开(公告)日：2003-04-29

    申请号：US10198996

    申请日：2002-07-22

    申请人： Kiichi Makuta ,  Akihiro Fujita ,  Hideo Kasai ,  Masashii Wada ,  Atsushi Toukairin

    发明人： Kiichi Makuta ,  Akihiro Fujita ,  Hideo Kasai ,  Masashii Wada ,  Atsushi Toukairin

    IPC分类号： G11C1606

    CPC分类号： G11C29/789

    摘要： A nonvolatile semiconductor memory device includes a memory array which comprises a plurality of memory cells of a type wherein predetermined voltages are applied to selected memory cells to change their threshold voltages, whereby information are stored therein according to the difference between the threshold voltages, and whose some memory cells are used as spare memory cells. The nonvolatile semiconductor memory device is provided with a latch circuit connected to each bit line of the memory array through a transmission switch. The memory array is capable of storing therein at least substitutional information for replacing a defective bit by the spare memory cell. The substitutional information is transferred from the memory array to the latch circuit through the transmission switch and held in the latch circuit.

    Nonvolatile semiconductor memory device
    3.
    发明授权
    Nonvolatile semiconductor memory device 有权

    公开(公告)号：US06480415B2

    公开(公告)日：2002-11-12

    申请号：US09984224

    申请日：2001-10-29

    申请人： Kiichi Makuta ,  Akihiro Fujita ,  Hideo Kasai ,  Masashii Wada ,  Atsushi Toukairin

    发明人： Kiichi Makuta ,  Akihiro Fujita ,  Hideo Kasai ,  Masashii Wada ,  Atsushi Toukairin

    IPC分类号： G11C1606

    CPC分类号： G11C29/789

    摘要： A nonvolatile semiconductor memory device includes a memory array which comprises a plurality of memory cells of a type wherein predetermined voltages are applied to selected memory cells to change their threshold voltages, whereby information are stored therein according to the difference between the threshold voltages, and whose some memory cells are used as spare memory cells. The nonvolatile semiconductor memory device is provided with a latch circuit connected to each bit line of the memory array through a transmission switch. The memory array is capable of storing therein at least substitutional information for replacing a defective bit by the spare memory cell. The substitutional information is transferred from the memory array to the latch circuit through the transmission switch and held in the latch circuit.

    Exhaust system for a vehicle
    5.
    发明授权
    Exhaust system for a vehicle 有权
    车辆排气系统

    公开(公告)号：US07997376B2

    公开(公告)日：2011-08-16

    申请号：US12099701

    申请日：2008-04-08

    申请人： Akihiro Fujita

    发明人： Akihiro Fujita

    IPC分类号： B60K13/04

    CPC分类号： B60K13/04

    摘要： An exhaust system (26) for a vehicle with a V-engine, aimed at increasing the output power of the V-engine, preventing heat conduction from the exhaust system to the parts around the exhaust system and enhancing the durability of the exhaust system is provided. A transmission and a transfer device (14) are connected in series to the V-engine with an output shaft extending in the longitudinal direction of the vehicle, the transmission and the transfer device (14) being provided in a tunnel (15) in a central portion of the floor (4) of the vehicle and protruding to an upper section of the vehicle, a pair of exhaust pipes (31, 32) being connected to each bank of the V-engine, the exhaust pipes (31, 32) converging into a convergence section provided under the floor (4) and extending to the rear of the vehicle.

    摘要翻译： 一种用于具有V型发动机的车辆的排气系统（26），其旨在增加V型发动机的输出功率，防止从排气系统到排气系统周围的部件的热传导并提高排气系统的耐久性 提供。 传动装置和传送装置（14）与V型发动机串联连接，其输出轴沿车辆的纵向方向延伸，传动装置（14）设置在隧道（15）中， 所述车辆的地板（4）的中心部分并且突出到所述车辆的上部;一对连接到所述V型发动机的每一排的排气管（31,32），所述排气管（31,32） 会聚到设置在地板（4）下方并延伸到车辆后部的会聚部分。

    Support structure for exhaust pipe
    8.
    发明授权
    Support structure for exhaust pipe 失效

    公开(公告)号：US07931119B2

    公开(公告)日：2011-04-26

    申请号：US12802107

    申请日：2010-05-28

    申请人： Akihiro Fujita

    发明人： Akihiro Fujita

    IPC分类号： F01N13/08 ,  F01N13/10 ,  F01N1/00 ,  B60K13/04 ,  B60R19/02 ,  B60R19/03 ,  B60R19/04

    CPC分类号： B60K13/04 ,  B60R19/24 ,  B60R19/48

    摘要： A support structure for an exhaust pipe includes left and right side frames disposed on a lower side of a rear floor and a back panel extending downward from the rear floor joined to rear end portions of the side frames. Reinforcing plates join the back panel on a vehicle rear side in positions facing the rear of the side frames. Stays extending in a rearward direction mount to the respective reinforcing plates and support a bumper member. A muffler disposed below the rear floor and on a front side of the back panel or an exhaust pipe connected thereto, is supported on a vehicle body by a hanger rubber. A flange portion that is formed with a reinforcing plate extends rearwardly and perpendicularly therefrom. A hanger rubber mounts to the flange portion to support the muffler or exhaust pipe.

    2-PHENYLNICOTINIC ACID DERIVATIVE
    10.
    发明申请
    2-PHENYLNICOTINIC ACID DERIVATIVE 审中-公开
    2-苯基丙酸衍生物

    公开(公告)号：US20100004459A1

    公开(公告)日：2010-01-07

    申请号：US12448050

    申请日：2007-12-12

    申请人： Nobuo Menjo ,  Tomohiro Ookubo ,  Taisuke Hasegawa ,  Kazuhito Furukawa ,  Akihiro Fujita

    发明人： Nobuo Menjo ,  Tomohiro Ookubo ,  Taisuke Hasegawa ,  Kazuhito Furukawa ,  Akihiro Fujita

    IPC分类号： C07D213/80

    CPC分类号： C07D213/80 ,  C07D401/10 ,  C07D413/10

    摘要： The present invention is to provide the compounds useful as a treating or preventing agent for gout and hyperuricemia which are 2-phenylnicotinic acid derivatives having a uric acid lowering action due to an excellent xanthine oxidase inhibitory action. Since the 2-phenylnicotinic acid derivatives of the present invention exhibit a uric acid lowering action due to an excellent xanthine oxidase inhibitory action and also hypolipemic action, their utility is very high as a treating or preventive agent for gout and hyperuricemia which are often accompanied by hyperlipemia as a complication.

    摘要翻译： 本发明提供可用作痛风和高尿酸血症的治疗或预防剂的化合物，其是由于优异的黄嘌呤氧化酶抑制作用而具有尿酸降低作用的2-苯基烟酸衍生物。 由于本发明的2-苯基烟酸衍生物由于优异的黄嘌呤氧化酶抑制作用和降血脂作用而显示出尿酸降低作用，因此其作为痛风和高尿酸血症的治疗或预防剂的效用非常高，通常伴随着 高脂血症为并发症。