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    Semiconductor laser device and laser projector
    3.
    发明授权
    Semiconductor laser device and laser projector 有权
    半导体激光设备和激光投影机

    公开(公告)号：US07474682B2

    公开(公告)日：2009-01-06

    申请号：US10584091

    申请日：2004-12-21

    申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Ken'ichi Kasazumi ,  Isao Kidoguchi

    发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Ken'ichi Kasazumi ,  Isao Kidoguchi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/0625 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0624 ,  H01S5/1064 ,  H01S5/22

    摘要： In a semiconductor laser device (10) having different facet reflectivities, an electrode disposed on a stripe ridge (107a) is divided into four electrode parts (1), (2), (3), and (4), and a larger injection current is injected to an electrode part that is closer to a light emission facet side. Further, a carrier density distribution in an active layer that is opposed to the stripe ridge can be matched to a light intensity distribution in the active layer, thereby preventing degradation in high output characteristic due to destabilization of a transverse mode and reduction in gain which are caused by spatial hole burning.

    摘要翻译： 在具有不同面反射率的半导体激光器件（10）中，设置在条纹脊（107a）上的电极被分成四个电极部分（1），（2），（3）和（4） 电流被注入到更靠近发光小面侧的电极部分。 此外，与有源层相对的有源层中的载流子浓度分布可以与有源层中的光强度分布相匹配，从而防止由于横模的不稳定性而导致的高输出特性的劣化和增益的降低 造成空间孔燃烧。

    Semiconductor laser device and laser projector
    4.
    发明申请
    Semiconductor laser device and laser projector 有权
    半导体激光设备和激光投影机

    公开(公告)号：US20070165685A1

    公开(公告)日：2007-07-19

    申请号：US10584091

    申请日：2004-12-21

    申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Ken'ichi Kasazumi ,  Isao Kidoguchi

    发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Ken'ichi Kasazumi ,  Isao Kidoguchi

    IPC分类号： H01S3/00 ,  H01S5/00 ,  H01S3/097

    CPC分类号： H01S5/0625 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/0624 ,  H01S5/1064 ,  H01S5/22

    摘要： According to the present invention, in a semiconductor laser device (10) having different facet reflectivities, an electrode disposed on a stripe ridge (107a) is divided into four electrode parts (1), (2), (3), and (4), and a larger injection current is injected to an electrode part that is closer to a light emission facet side. According to this semiconductor laser device, a carrier density distribution in an active layer that is opposed to the stripe ridge can be matched to a light intensity distribution in the active layer, thereby preventing degradation in high output characteristic due to destabilization of transverse mode and reduction in gain which are caused by spatial hole burning.

    摘要翻译： 根据本发明，在具有不同面反射率的半导体激光器件（10）中，设置在条纹脊（107a）上的电极被分成四个电极部分（1），（2），（3）和（ 4），并且将更大的注入电流注入到更靠近发光小面侧的电极部分。 根据该半导体激光器件，与有源层相对的有源层中的载流子密度分布可以与有源层中的光强度分布相匹配，从而防止由于横模的不稳定性而导致的高输出特性的劣化和还原 在空间孔燃烧引起的增益。

    Acoustooptic device and optical imaging apparatus using the same
    8.
    发明授权
    Acoustooptic device and optical imaging apparatus using the same 有权
    声光装置和使用其的光学成像装置

    公开(公告)号：US07855823B2

    公开(公告)日：2010-12-21

    申请号：US11571218

    申请日：2005-06-29

    申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Takayuki Negami ,  Yasuhito Takahashi ,  Toshimi Nishiyama ,  Kimihiko Shibuya

    发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Takayuki Negami ,  Yasuhito Takahashi ,  Toshimi Nishiyama ,  Kimihiko Shibuya

    IPC分类号： G02F1/11 ,  G02F1/33

    CPC分类号： G02F1/0072

    摘要： The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane. Light from the light source is diffracted by the acoustooptic device in accordance with a signal from the driving circuit and the resultant diffracted light forms an image on the image plane. An acoustooptic medium of the acoustooptic device is formed of a Group III nitride crystal.

    摘要翻译： 本发明提供即使在紫外线区域中的光也可以使用，没有激光损伤和光学损伤以及良好的声光性能的光学装置和使用该光学装置的光学成像装置。 根据本发明的声光装置包括高频信号输入部分（65），换能器部分（64）和声光介质（6）。 从高频信号输入部（65）输入的高频信号由换能器部（64）转换为机械振动，声光介质（6）的光学特性根据机械振动而变化。 声光介质由III族氮化物晶体形成。 根据本发明的光学成像装置包括光源，声光装置，驱动电路和图像平面。 来自光源的光根据来自驱动电路的信号被声光装置衍射，并且所得到的衍射光在图像平面上形成图像。 声光装置的声光介质由III族氮化物晶体形成。

    Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device
    10.
    发明授权
    Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device 有权
    制造III族氮化物晶体的方法，制造半导体衬底的方法，III族氮化物晶体，半导体衬底和电子器件

    公开(公告)号：US07255742B2

    公开(公告)日：2007-08-14

    申请号：US10884252

    申请日：2004-07-02

    申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： C30B29/38

    CPC分类号： C30B29/403 ,  C30B19/04 ,  C30B19/06 ,  C30B29/406

    摘要： The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured efficiently, and are useful and usable as a substrate for semiconductor manufacturing processes. A semiconductor layer that is made of a semiconductor and includes crystal-nucleus generation regions at its surface is formed. The semiconductor is expressed by a composition formula of AluGavIn1-u-vN (where 0≦u≦1, 0≦v≦1, and u+v≦1). Group III nitride crystals then are grown on the semiconductor layer by bringing the crystal-nucleus generation regions of the semiconductor layer into contact with a melt in an atmosphere including nitrogen. The melt contains nitrogen, at least one Group III element selected from the group consisting of gallium, aluminum, and indium, and at least one of alkali metal and alkaline-earth metal.

    摘要翻译： 本发明提供一种制造高品质的III族氮化物晶体的方法，其有效制造，并且可用作半导体制造工艺的基板。 形成由半导体构成的半导体层，其表面具有晶核生成区域。 半导体由以下组成式表示：在1-uv N中（其中0 <= u <= 1,0，...， <= v <= 1，u + v <= 1）。 然后通过在包括氮气的气氛中使半导体层的晶核生成区域与熔体接触，在半导体层上生长III族氮化物晶体。 熔体含有氮，至少一种选自镓，铝和铟的III族元素，以及碱金属和碱土金属中的至少一种。