Dual chamber, high sensitivity gas sensor and pump
    1.
    发明授权
    Dual chamber, high sensitivity gas sensor and pump 失效
    双室,高灵敏度气体传感器和泵

    公开(公告)号:US4047102A

    公开(公告)日:1977-09-06

    申请号:US682554

    申请日:1976-05-03

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: G01N33/0016 G01N7/10 H01J41/06

    Abstract: Apparatus for measuring gas comprising a gas sensing unit having a gas inlet membrane and being evacuated by a sputter ion pump via a restrictive conductance. Said conductance has a very low value relative to the pumping speed of the pump, whereby a change in the pumping speed of the pump causes substantially no change in the pumping speed with which the gas sensing unit is evacuated, so that the output signal of said gas sensing unit is a true reflection of the gas entering said inlet, without distortion which would otherwise be caused by changes in pumping speed of said pump.

    Abstract translation: 包括用于测量气体的装置,包括具有气体入口膜的气体感测单元,并通过限制性电导通过溅射离子泵抽真空。 所述电导相对于泵的泵送速度具有非常低的值,由此泵的泵送速度的变化导致气体感测单元抽真空的泵送速度基本上没有变化,从而使所述泵的输出信号 气体感测单元是进入所述入口的气体的真实反射,而不会由于所述泵的泵送速度的变化而引起变形。

    Cryogenic pump
    2.
    发明授权
    Cryogenic pump 失效
    低温泵

    公开(公告)号:US4311018A

    公开(公告)日:1982-01-19

    申请号:US189524

    申请日:1980-09-22

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: F04B37/08 Y10S417/901

    Abstract: A cryogenic apparatus comprises refrigeration means utilizing a two-stage expansion of compressed helium gas that circulates in a closed loop, whereby a first pumping stage can be maintained at a temperature in the range from 50.degree. K. to 80.degree. K. and a second pumping stage can be maintained at a colder temperature in the range from 10.degree. K. to 20.degree. K. The first pumping stage comprises an array of louvers of chevron configuration. These louvers enclose the second pumping stage, and serve as baffles to shield the pumping surfaces of the second stage from thermal radiation that would reduce the usable refrigeration capacity of the second stage for removing gases from a chamber to be evacuated. The chevroned baffles also protect a cryosorbent coating on the interior surfaces of the second stage from becoming iced or plugged by gas species that cryocondense at the higher temperature of the first stage. The assembly comprising the first-stage array of chevroned baffles surrounding the second-stage pumping surfaces may be disposed directly in the chamber to be evacuated, or may be mounted in a housing structure coupled to the chamber. The housing structure preferably has a radially bulging cylindrical configuration that permits substantially unimpeded conductance of gases from the chamber to the first-stage chevroned baffles.

    Abstract translation: 低温装置包括利用在闭环中循环的压缩氦气的两级膨胀的制冷装置,由此第一泵送阶段可以保持在50°至80°K的温度范围内,并且第二级 泵送阶段可以保持在10°K至20°K范围内的较冷的温度。第一个泵送阶段包括一个人字形配置的百叶窗阵列。 这些百叶窗包围第二泵送阶段,并且用作挡板以将第二阶段的泵送表面与热辐射隔离,这将降低第二阶段用于从要被排空的室中除去气体的可用制冷能力。 雪佛龙挡板还保护第二阶段内表面上的冷冻剂涂层免受在第一阶段较高温度下冷冻的气体物质的冰或堵塞。 包括围绕第二级泵送表面的人字形挡板的第一级阵列的组件可以直接设置在待抽真空的腔室中,或者可以安装在耦合到腔室的壳体结构中。 壳体结构优选地具有径向凸出的圆柱形构造,其允许气体从腔室到第一级斜面挡板的基本上无阻碍的电导。

    Cryogenic device for restricting the pumping speed of selected gases
    3.
    发明授权
    Cryogenic device for restricting the pumping speed of selected gases 失效
    用于限制所选气体的泵送速度的低温装置

    公开(公告)号:US4285710A

    公开(公告)日:1981-08-25

    申请号:US943276

    申请日:1978-09-18

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: F04B37/08 C23C14/56 Y10S417/901

    Abstract: In an apparatus for removing a selected first gas from a chamber at a controllably variable pumping speed while maintaining a substantially constant pumping speed for removing a second gas from the same chamber, a flow restricting device is disposed between the chamber and a device that pumps the first gas. The flow restricting device comprises a stationary member having an apertured portion through which the first gas can flow from the chamber to the pumping device. Restriction of the flow of the first gas to the pumping device is accomplished by covering the apertured portion of the stationary member with a movable member to the extent necessary to provide the desired pumping speed for the first gas. The stationary member is maintained at a cryogenic temperature higher than the condensation temperature of the first gas, but at a value at which the second gas condenses. In one embodiment, the stationary member is maintained at the desired cryogenic temperature by being mounted in intimate thermal contact with a cryogenic fluid reservoir. In an alternative embodiment, the stationary member is mounted in intimate thermal contact with the warmer stage of a two-stage cryogenic pump.

    Abstract translation: 在用于以可控地可变的泵送速度从腔室中移除所选择的第一气体的装置中,同时保持用于从相同腔室移除第二气体的基本恒定的泵送速度,流动限制装置设置在腔室和泵送装置之间的装置 第一气。 流动限制装置包括具有多孔部分的固定构件,第一气体可以通过该部分从腔室流到泵送装置。 将第一气体流向泵送装置的限制通过用可移动构件覆盖固定构件的有孔部分达到为第一气体提供期望的泵送速度所必需的程度来实现。 固定构件保持在比第一气体的冷凝温度高的低温温度,但是保持在第二气体冷凝的值。 在一个实施例中,通过安装在与低温流体储存器紧密热接触中,固定构件保持在期望的低温温度。 在替代实施例中,固定构件安装成与两级低温泵的较暖阶段紧密地热接触。

    Cryogenic pump with radiation shield
    4.
    发明授权
    Cryogenic pump with radiation shield 失效
    带辐射屏蔽的低温泵

    公开(公告)号:US4336690A

    公开(公告)日:1982-06-29

    申请号:US234512

    申请日:1981-02-17

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: F04B37/08 Y10S417/901

    Abstract: Two stage cryogenic pump having axially spaced baffle members for shielding the second stage from external thermal radiation while permitting substantially unimpeded gas flow from the inlet opening to the second stage.

    Abstract translation: 两级低温泵具有轴向隔开的挡板构件,用于将第二级与外部热辐射隔离,同时允许从入口开口到第二级的基本上无阻碍的气体流动。

    Thin film deposition by electric and magnetic crossed-field diode
sputtering
    5.
    发明授权
    Thin film deposition by electric and magnetic crossed-field diode sputtering 失效
    通过电磁场交叉场二极管溅射进行薄膜沉积

    公开(公告)号:US4006073A

    公开(公告)日:1977-02-01

    申请号:US565019

    申请日:1975-04-03

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: C23C14/35 H01J37/34 H01J9/20 Y10S505/816 Y10S505/866

    Abstract: Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

    Abstract translation: 将薄膜涂层施加到工件的表面,特别是通过交叉场二极管溅射阵列将氮化钛涂层施加到速调管窗口。 该阵列由许多小型中空导电圆柱体的内聚组构成,并且安装成使得该组一侧的气缸的开口端与钛阴极板相邻。 工件被安装成面向组的另一侧的开口端。 将磁场施加到阵列以与气缸同轴并且在气缸和阴极板之间施加电位,作为阳极的气缸相对于阴极板是正的。 气缸,阴极板和工件位于氮气气氛中,由于气缸和阴极板之间的电场而被场致发射,从而建立了导致钛溅射的阳极 - 阴极放电 盘子。 溅射的钛涂覆工件并与氮化学结合以在工件上形成氮化钛涂层。 气压,气体混合物,阴极材料组成,施加到阴极和阳极的电压,磁场,阴极,阳极和工件间隔以及阳极圆筒的纵横比(长度与内径之比)都可以被控制 以提供不同组成和厚度的一致的最佳薄膜涂层。 本公开的另一方面是用氮化钛涂覆微波组分本身以在组件的操作条件下减少多次反应。

    Cryogenic pumping apparatus with replaceable pumping surface elements
    6.
    发明授权
    Cryogenic pumping apparatus with replaceable pumping surface elements 失效
    具有可更换泵送表面元件的低温泵送装置

    公开(公告)号:US4295338A

    公开(公告)日:1981-10-20

    申请号:US86107

    申请日:1979-10-18

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: F04B37/08 Y10S417/901

    Abstract: Two-stage cryogenic pumping apparatus having individual plate members with cryosorbent coatings secured by removable fasteners to permit easy assembly and replacement of the plate members. The plate members are spaced apart to provide relatively unrestricted access to the cryosorbent material for the gases to be adsorbed thereon.

    Abstract translation: 具有通过可移除的紧固件固定的具有冷冻剂涂层的单独的板构件的两级低温泵送装置,以允许容易地组装和更换板构件。 板构件间隔开以提供相对不受限制地进入用于吸附在其上的气体的低温吸收材料。

    Thin film deposition by electric and magnetic crossed-field diode
sputtering
    7.
    发明授权
    Thin film deposition by electric and magnetic crossed-field diode sputtering 失效
    通过电磁场交叉场二极管溅射进行薄膜沉积

    公开(公告)号:US4209552A

    公开(公告)日:1980-06-24

    申请号:US970844

    申请日:1978-12-18

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: C23C14/35 H01J37/34

    Abstract: Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

    Abstract translation: 将薄膜涂层施加到工件的表面,特别是通过交叉场二极管溅射阵列将氮化钛涂层施加到速调管窗口。 该阵列由许多小型中空导电圆柱体的内聚组构成,并且安装成使得该组一侧的气缸的开口端与钛阴极板相邻。 工件被安装成面向组的另一侧的开口端。 将磁场施加到阵列以与气缸同轴并且在气缸和阴极板之间施加电位,作为阳极的气缸相对于阴极板是正的。 气缸,阴极板和工件位于氮气气氛中,由于气缸和阴极板之间的电场而被场致发射,从而建立了导致钛溅射的阳极 - 阴极放电 盘子。 溅射的钛涂覆工件并与氮化学结合以在工件上形成氮化钛涂层。 气压,气体混合物,阴极材料组成,施加到阴极和阳极的电压,磁场,阴极,阳极和工件间隔以及阳极圆筒的纵横比(长度与内径之比)都可以被控制 以提供不同组成和厚度的一致的最佳薄膜涂层。 本公开的另一方面是用氮化钛涂覆微波组分本身以在组件的操作条件下减少多次反应。

    Titanium nitride thin films for minimizing multipactoring
    8.
    发明授权
    Titanium nitride thin films for minimizing multipactoring 失效
    氮化钛薄膜,用于最大限度减少多重反应

    公开(公告)号:US4151325A

    公开(公告)日:1979-04-24

    申请号:US734841

    申请日:1976-10-22

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: C23C14/35 H01J37/34 H01J9/20 Y10S505/816 Y10S505/866

    Abstract: Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

    Abstract translation: 将薄膜涂层施加到工件的表面,特别是通过交叉场二极管溅射阵列将氮化钛涂层施加到速调管窗口。 该阵列由许多小型中空导电圆柱体的内聚组构成,并且安装成使得该组一侧的气缸的开口端与钛阴极板相邻。 工件被安装成面向组的另一侧的开口端。 将磁场施加到阵列以与气缸同轴并且在气缸和阴极板之间施加电位,作为阳极的气缸相对于阴极板是正的。 气缸,阴极板和工件位于氮气气氛中,由于气缸和阴极板之间的电场而被场致发射,从而建立了导致钛溅射的阳极 - 阴极放电 盘子。 溅射的钛涂覆工件并与氮化学结合以在工件上形成氮化钛涂层。 气压,气体混合物,阴极材料组成,施加到阴极和阳极的电压,磁场,阴极,阳极和工件间隔以及阳极圆筒的纵横比(长度与内径之比)都可以被控制 以提供不同组成和厚度的一致的最佳薄膜涂层。 本公开的另一方面是用氮化钛涂覆微波组分本身以在组件的操作条件下减少多次反应。

    Sputter-ion pump having improved cooling and improved magnetic circuitry
    9.
    发明授权
    Sputter-ion pump having improved cooling and improved magnetic circuitry 失效
    具有改进的冷却和改进的磁路的溅射离子泵

    公开(公告)号:US3994625A

    公开(公告)日:1976-11-30

    申请号:US550393

    申请日:1975-02-18

    Applicant: Kimo M. Welch

    Inventor: Kimo M. Welch

    CPC classification number: H01J41/20

    Abstract: In a magnetically confined sputter-ion vacuum pump a multi-apertured anode electrode is interposed between a pair of reactive cathode electrode plates. An evacuable envelope encloses the anode and cathode electrodes and a magnetic circuit surrounds the vacuum envelope for producing a glow discharge confining magnetic field extending axially of the apertures in the anode. The reactive cathode plates include peripheral sealing flanges for compressing a sealing gasket into sealing engagement with a pair of sealing surfaces at opposite ends of a tubular main body portion of the envelope. A clamping ring structure, having a bolt circle formed therein, serves to clamp the two reactive cathode plates to the main body and also serves as an integral part of the magnetic circuit. Water coolant channels are brazed to the outer surfaces of the cathode plates for cooling same in use. The magnetic circuit includes a pair of ferrite magnets disposed outside the envelope on opposite sides of the cathodes and enclosed by a magnetic yoke to minimize the size and weight of the magnet and to reduce unwanted stray magnetic fields.

    Abstract translation: 在磁限制的溅射离子真空泵中,多孔阳极被插在一对反应阴极电极板之间。 可抽真空的信封包围阳极和阴极电极,并且磁回路围绕真空外壳,用于产生沿阳极轴向延伸的辉光放电限制磁场。 活性阴极板包括用于将密封垫片压缩成与封套的管状主体部分的相对端处的一对密封表面密封接合的周边密封凸缘。 在其中形成有螺栓圆的夹紧环结构用于将两个反应性阴极板夹持到主体,并且还用作磁路的组成部分。 水冷却剂通道钎焊到阴极板的外表面,以在使用中冷却。 磁路包括一对铁氧体磁体,它们设置在阴极的相对两侧的外壳外部,并被磁轭包围,以使磁体的尺寸和重量最小化并减少不需要的杂散磁场。

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