公开(公告)号：US20190214531A1

公开(公告)日：2019-07-11

申请号：US16315081

申请日：2017-07-25

Applicant: King Abdullah University of Science and Technology

Inventor： Tien Khee NG ,  Chao ZHAO ,  Davide PRIANTE ,  Boon S. OOI ,  Mohamed Ebaid Abdrabou HUSSEIN

IPC: H01L33/44 ,  H01L31/0216 ,  H01L31/18 ,  C25B1/00 ,  C25B1/04

CPC classification number: H01L33/44 ,  C25B1/003 ,  C25B1/04 ,  H01L31/0216 ,  H01L31/02161 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1868 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0025 ,  Y02P20/134

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

公开(公告)号：US20220140201A1

公开(公告)日：2022-05-05

申请号：US17577568

申请日：2022-01-18

Applicant: King Abdullah University of Science and Technology

Inventor： Tien Khee NG ,  Chao ZHAO ,  Davide PRIANTE ,  Boon S. OOI ,  Mohamed Ebaid Abdrabou HUSSEIN

IPC: H01L33/44 ,  H01L31/0216 ,  C25B1/55 ,  C25B1/04 ,  H01L31/18

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.