公开(公告)号：US4965630A

公开(公告)日：1990-10-23

申请号：US451166

申请日：1989-12-15

申请人： Kinya Kato ,  Kazuo Ushida ,  Toshiyuki Namikawa ,  Koichi Matsumoto ,  Kyoichi Suwa ,  Koichi Ohno

发明人： Kinya Kato ,  Kazuo Ushida ,  Toshiyuki Namikawa ,  Koichi Matsumoto ,  Kyoichi Suwa ,  Koichi Ohno

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/70241

摘要： The present invention provides a projection exposure apparatus comprising: a reticle stage; an illumination optical system for illuminating a reticle on the reticle stage; a stage on which a substrate is supported; and a projection optical system having a predetermined numerical aperture to project a pattern formed on the reticle and illuminated by the illumination optical system onto the substrate, and in which a longitudinal spherial aberration thereof regarding the focusing of the pattern formed on the reticle onto the substrate are excessively corrected.

摘要翻译： 本发明提供一种投影曝光装置，包括：标线片台; 照明光学系统，用于照亮标线片台上的掩模版; 支撑衬底的阶段; 以及具有预定数值孔径的投影光学系统，以将形成在标线上的图案投影并由照明光学系统照射到基板上，并且其中将关于在掩模版上形成的图案聚焦到基板上的纵向球面像差 被过度纠正。

公开(公告)号：US4734746A

公开(公告)日：1988-03-29

申请号：US51236

申请日：1987-05-12

申请人： Kazuo Ushida ,  Satoru Anzai ,  Kazuaki Suzuki ,  Toshio Matsuura ,  Kyoichi Suwa ,  Koichi Matsumoto

发明人： Kazuo Ushida ,  Satoru Anzai ,  Kazuaki Suzuki ,  Toshio Matsuura ,  Kyoichi Suwa ,  Koichi Matsumoto

IPC分类号： G03F7/20 ,  G03B27/32 ,  G03B27/42

CPC分类号： G03F7/70066 ,  G03F7/2022 ,  G03F7/70241 ,  G03F7/70458

摘要： An exposure method for photolithography comprises the steps of forming a pattern on a substrate by the use of a first exposure apparatus including a first imaging optical system having a reduction magnification 1/.beta.1 and an image circle of a diameter .phi.1, and forming a second pattern on the substrate on which the first pattern has been formed, by the use of a second exposure apparatus including a second imaging optical system having a reduction magnification 1/.beta.2 different from the reduction magnification 1/.beta.1 and an image circle of a diameter .phi.2, wherein when N is an integer, the conditions that .beta.1.times..phi.1=.beta.2.times..phi.2 and .phi.1=N.times..phi.2 are satisfied.

摘要翻译： 用于光刻的曝光方法包括以下步骤：通过使用包括具有缩小倍率1 /β1的第一成像光学系统和直径φ1的图像圆的第一曝光装置在基板上形成图案，并且形成 通过使用包括具有不同于缩小倍率1 /β1的缩小倍率1 /β2的第二成像光学系统的第二曝光装置和形成第一图案的图像圆的第二图案， 直径phi 2，其中当N是整数时，满足β1 phi 1 =β2 ph 2和ph 1 = N x ph 2的条件。

公开(公告)号：US06750952B2

公开(公告)日：2004-06-15

申请号：US10198701

申请日：2002-07-17

申请人： Ilya Grodnensky ,  Kyoichi Suwa ,  Kazuo Ushida ,  Eric R. Johnson

发明人： Ilya Grodnensky ,  Kyoichi Suwa ,  Kazuo Ushida ,  Eric R. Johnson

IPC分类号： G03B2732

CPC分类号： G03F7/70625 ,  G03F7/70591 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70683

摘要： Apparatus for performing measurement of a dimension of a test marked formed by overlapping feature imaged onto a an image forming layer of a semiconductor wafer and the calculation of the critical dimensions of the features from test mark. This is used in semiconductor processing. Also included is software configured to program a measurement device to perform the measurement and calculation of the dimension of a test mark.

摘要翻译： 用于执行测量标记的测量的装置，该测试标记由成像在半导体晶片的图像形成层上的重叠特征形成，并且从测试标记计算特征的临界尺寸。 这用于半导体处理。 还包括被配置为对测量装置进行编程以执行测试标记的尺寸的测量和计算的软件。

公开(公告)号：US06610460B2

公开(公告)日：2003-08-26

申请号：US10195394

申请日：2002-07-16

申请人： Masaya Komatsu ,  Kyoichi Suwa ,  Kazuo Ushida

发明人： Masaya Komatsu ,  Kyoichi Suwa ,  Kazuo Ushida

IPC分类号： G03F720

CPC分类号： G03F7/70466 ,  G03F1/50 ,  G03F1/70 ,  G03F7/2022

摘要： An exposure method comprises the steps of: providing a resist-coated substrate; providing a first mask including first and second regions having respective patterns formed therein; conducting a first exposure process in which the patterns in the first and second regions of the first mask are projected onto the substrate so as to expose first and second regions of the substrate which correspond to the patterns, respectively; and conducting a second exposure process after completion of said first exposure process so as to make an additional exposure of the second region of the substrate. By virtue of the incorporation of the second exposure process so as to make an additional exposure of the second region of the substrate, the resist linewidth which would be otherwise produced in the second region of the substrate by the first exposure process can be compensated through the second exposure process.

公开(公告)号：US06449031B1

公开(公告)日：2002-09-10

申请号：US09615636

申请日：2000-07-13

申请人： Ilya Grodnensky ,  Kyoichi Suwa ,  Kazuo Ushida ,  Eric R. Johnson

发明人： Ilya Grodnensky ,  Kyoichi Suwa ,  Kazuo Ushida ,  Eric R. Johnson

IPC分类号： G03B2732

CPC分类号： G03F7/70625 ,  G03F7/70591 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70683

摘要： A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.

摘要翻译： 提供了形成临界尺寸测试标记的方法，以及使用该标记来表征和监视成像性能。 根据本发明的方法包括在相对于彼此绕轴线旋转的两个重叠取向中的每一个处暴露基本上标准的临界尺寸条。 重叠部分形成临界尺寸测试标记，其有助于实现低成本，快速确定亚微米临界尺寸，以表征曝光工具成像性能和使用光学测量系统的在过程中性能监控。

公开(公告)号：US4931830A

公开(公告)日：1990-06-05

申请号：US389978

申请日：1989-08-07

申请人： Kyoichi Suwa ,  Kazuo Ushida ,  Takeshi Suto ,  Masaomi Kameyama ,  Shigeru Hirukawa ,  Shinichi Nakamura

发明人： Kyoichi Suwa ,  Kazuo Ushida ,  Takeshi Suto ,  Masaomi Kameyama ,  Shigeru Hirukawa ,  Shinichi Nakamura

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/70541 ,  G03F7/70091 ,  G03F7/7025

摘要： A projection exposure apparatus is provided with an illuminating optical system for illuminating a reticle having a predetermined fine pattern, a projection optical system for projecting the pattern of the reticle onto a wafer, and diaphragm means so constructed as to vary the aperture of a diaphragm of the projection optical system, wherein means for receiving information on the pattern present on the reticle, and means for determining a diaphgram aperture capable of eliminating the high-order diffracted light generated by the pattern of the reticle according to information as stated above and controlling the aperture of variable diaphragm means of the projection optical system, are provided.

摘要翻译： 投影曝光装置设置有用于照射具有预定精细图案的掩模版的照明光学系统，用于将掩模版的图案投影到晶片上的投影光学系统，以及被构造成将隔膜的孔径改变为 投影光学系统，其中用于接收关于掩模版上存在的图案的信息的装置，以及用于确定能够根据上述信息消除由所述标线图案产生的高次衍射光的轨迹孔的装置， 提供投影光学系统的可变光阑装置的孔径。

公开(公告)号：US6094256A

公开(公告)日：2000-07-25

申请号：US163049

申请日：1998-09-29

申请人： Ilya Grodnensky ,  Kyoichi Suwa ,  Kazuo Ushida ,  Eric R. Johnson

发明人： Ilya Grodnensky ,  Kyoichi Suwa ,  Kazuo Ushida ,  Eric R. Johnson

IPC分类号： G03B27/72 ,  G03C5/00 ,  G03F7/20 ,  G03B27/32 ,  G03B27/42

CPC分类号： G03F7/70625 ,  G03F7/70591 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70683

摘要： A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.

摘要翻译： 提供了形成临界尺寸测试标记的方法，以及使用该标记来表征和监视成像性能。 根据本发明的方法包括在相对于彼此绕轴线旋转的两个重叠取向中的每一个处暴露基本上标准的临界尺寸条。 重叠部分形成临界尺寸测试标记，其有助于实现低成本，快速确定亚微米临界尺寸，以表征曝光工具成像性能和使用光学测量系统的在过程中性能监控。

公开(公告)号：US4806987A

公开(公告)日：1989-02-21

申请号：US135377

申请日：1987-12-21

申请人： Takashi Mori ,  Koichi Matsumoto ,  Tsutomu Takai ,  Masaichi Murakami ,  Kyoichi Suwa

发明人： Takashi Mori ,  Koichi Matsumoto ,  Tsutomu Takai ,  Masaichi Murakami ,  Kyoichi Suwa

IPC分类号： H01L21/30 ,  G03F7/20 ,  H01L21/027 ,  G03B27/42

CPC分类号： G03F7/70475

摘要： A projection-exposing apparatus comprises a projecting optical system for projecting an image of a reticle having a predetermined pattern onto a wafer, and a stage for causing a relative shifting movement between a position of the wafer and a position of the reticle. A first exposure is effected for projecting and exposing the reticle image pattern from the projection optical system in a first area on the wafer and then the stage is shifted by a predetermined amount to effect second exposure for projecting and exposing the reticle image pattern in a second area positioned adjacent to the first area on the wafer thereby the reticle image being projected and exposed onto different areas on the same wafer. The stage causes the relative shifting movement between the reticle and the wafer in such a manner that the reticle image pattern obtained by the first exposure and the reticle image pattern obtained by the second exposure are overlapped with each other on the wafer by a predetermined amount.

摘要翻译： 投影曝光装置包括投影光学系统，用于将具有预定图案的掩模版的图像投影到晶片上，以及用于在晶片的位置和光罩之间进行相对移动的台。 进行第一曝光以在晶片上的第一区域中投影和曝光来自投影光学系统的标线片图像图案，然后将该台移动预定量，以进行第二次曝光，以在第二曝光中投影和曝光标线图像图案 区域定位成与晶片上的第一区域相邻，从而掩模版图像被投影并暴露在同一晶片上的不同区域上。 该阶段以这样的方式引起标线片和晶片之间的相对移动运动，使得通过第一曝光获得的标线图像图案和通过第二次曝光获得的标线图像图案在晶片上彼此重叠预定量。

公开(公告)号：US5434026A

公开(公告)日：1995-07-18

申请号：US989909

申请日：1992-12-11

申请人： Norihiko Takatsu ,  Kyoichi Suwa ,  Shinichi Nakamura ,  Hiroaki Hosokawa ,  Shigeru Hirukawa

发明人： Norihiko Takatsu ,  Kyoichi Suwa ,  Shinichi Nakamura ,  Hiroaki Hosokawa ,  Shigeru Hirukawa

IPC分类号： G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F7/2022 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675

摘要： In a method for measuring a condition for exposing, at a predetermined energy quantity, a pattern formed on a mask onto a photosensitive substrate on which a resist image is formed on the surface thereof by using an exposing device, first patterns formed at a plurality of positions on the mask are successively exposed onto a plurality of partial regions on the photosensitive substrate while changing said exposure condition. Second patterns are, with overlapping, exposed onto at least a portion of the latent image of said first patterns formed in said partial regions due to said process while changing the exposure condition. A predetermined state where the resist image is formed on the resist layer after the development is detected so that the exposure condition is measured in accordance with the state.

摘要翻译： 在通过使用曝光装置测量以预定能量将形成在其上形成有抗蚀剂图像的感光基板上的掩模曝光的条件的方法中，形成多个 在改变所述曝光条件的同时，将掩模上的位置依次曝光在感光基板上的多个部分区域上。 在改变曝光条件的同时，由于所述处理，第二图案重叠地暴露在形成在所述部分区域中的所述第一图案的至少一部分潜像上。 在显影后在抗蚀剂层上形成抗蚀剂图像的预定状态，使得根据状态测量曝光条件。

公开(公告)号：US4770533A

公开(公告)日：1988-09-13

申请号：US51203

申请日：1987-05-18

申请人： Kyoichi Suwa

发明人： Kyoichi Suwa

IPC分类号： G03F1/00 ,  G03F1/38 ,  G03F1/42 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68 ,  G01B11/00

CPC分类号： G03F9/7023 ,  G03F9/7076

摘要： An apparatus for detecting a position of a semiconductor wafer comprises a linear alignment mark formed on a surface of the wafer along a pair of parallel straight lines extending in a given direction intersecting a radial direction of the wafer. The alignment mark includes at least two projection sections projected from the surface and spaced from each other in the given direction. Each of the projection sections has a first stepped edge provided on or along one of the pairs of straight lines and a second stepped edge provided on and along the other of the pair of straight lines, the pair of straight lines being separated from each other by a distance d', and each of the projection sections being defined such that the following relationship is satisfied:l'>d'where l' is the length of one of the projection sections in the given direction. A position of the alignment mark with respect to a direction intersecting the given direction is determined on the basis of light scattered by the first and second stepped edges.

摘要翻译： 用于检测半导体晶片的位置的装置包括沿着沿与晶片的径向相交的给定方向延伸的一对平行直线形成在晶片的表面上的线性对准标记。 对准标记包括从表面突出并且沿给定方向彼此间隔开的至少两个突出部分。 每个突出部分具有设置在一对直线上或沿着一对直线中的一个上的第一阶梯边缘，以及设置在该对直线上并沿着另一条直线的第二台阶边缘，该一对直线彼此分开通过 距离d'，并且每个投影部分被限定为使得满足以下关系：l'> d'其中l'是给定方向上的一个投影部分的长度。 基于由第一和第二台阶边缘散射的光来确定对准标记相对于与给定方向相交的方向的位置。