公开(公告)号：US5434026A

公开(公告)日：1995-07-18

申请号：US989909

申请日：1992-12-11

申请人： Norihiko Takatsu ,  Kyoichi Suwa ,  Shinichi Nakamura ,  Hiroaki Hosokawa ,  Shigeru Hirukawa

发明人： Norihiko Takatsu ,  Kyoichi Suwa ,  Shinichi Nakamura ,  Hiroaki Hosokawa ,  Shigeru Hirukawa

IPC分类号： G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F7/2022 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675

摘要： In a method for measuring a condition for exposing, at a predetermined energy quantity, a pattern formed on a mask onto a photosensitive substrate on which a resist image is formed on the surface thereof by using an exposing device, first patterns formed at a plurality of positions on the mask are successively exposed onto a plurality of partial regions on the photosensitive substrate while changing said exposure condition. Second patterns are, with overlapping, exposed onto at least a portion of the latent image of said first patterns formed in said partial regions due to said process while changing the exposure condition. A predetermined state where the resist image is formed on the resist layer after the development is detected so that the exposure condition is measured in accordance with the state.

摘要翻译： 在通过使用曝光装置测量以预定能量将形成在其上形成有抗蚀剂图像的感光基板上的掩模曝光的条件的方法中，形成多个 在改变所述曝光条件的同时，将掩模上的位置依次曝光在感光基板上的多个部分区域上。 在改变曝光条件的同时，由于所述处理，第二图案重叠地暴露在形成在所述部分区域中的所述第一图案的至少一部分潜像上。 在显影后在抗蚀剂层上形成抗蚀剂图像的预定状态，使得根据状态测量曝光条件。

公开(公告)号：US4931830A

公开(公告)日：1990-06-05

申请号：US389978

申请日：1989-08-07

申请人： Kyoichi Suwa ,  Kazuo Ushida ,  Takeshi Suto ,  Masaomi Kameyama ,  Shigeru Hirukawa ,  Shinichi Nakamura

发明人： Kyoichi Suwa ,  Kazuo Ushida ,  Takeshi Suto ,  Masaomi Kameyama ,  Shigeru Hirukawa ,  Shinichi Nakamura

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/70541 ,  G03F7/70091 ,  G03F7/7025

摘要： A projection exposure apparatus is provided with an illuminating optical system for illuminating a reticle having a predetermined fine pattern, a projection optical system for projecting the pattern of the reticle onto a wafer, and diaphragm means so constructed as to vary the aperture of a diaphragm of the projection optical system, wherein means for receiving information on the pattern present on the reticle, and means for determining a diaphgram aperture capable of eliminating the high-order diffracted light generated by the pattern of the reticle according to information as stated above and controlling the aperture of variable diaphragm means of the projection optical system, are provided.

摘要翻译： 投影曝光装置设置有用于照射具有预定精细图案的掩模版的照明光学系统，用于将掩模版的图案投影到晶片上的投影光学系统，以及被构造成将隔膜的孔径改变为 投影光学系统，其中用于接收关于掩模版上存在的图案的信息的装置，以及用于确定能够根据上述信息消除由所述标线图案产生的高次衍射光的轨迹孔的装置， 提供投影光学系统的可变光阑装置的孔径。

公开(公告)号：US5835227A

公开(公告)日：1998-11-10

申请号：US818375

申请日：1997-03-14

申请人： Ilya Grodnensky ,  Etsuya Morita ,  Kyoichi Suwa ,  Shigeru Hirukawa

发明人： Ilya Grodnensky ,  Etsuya Morita ,  Kyoichi Suwa ,  Shigeru Hirukawa

IPC分类号： G01M11/00 ,  G03F7/20 ,  G01B11/00 ,  G01B11/02

CPC分类号： G03F7/70058 ,  G03F7/70241 ,  G03F7/706

摘要： A method and apparatus for determining performance characteristics in lithographic tools includes projecting a predetermined image with a projection system having a known predetermined performance characteristic to obtain data indicative of the relationship between the size of the projected image and the predetermined performance characteristic. The same image is then projected in a system having an unknown value for the predetermined performance characteristic. The predetermined performance characteristic for the system under consideration is then determined based on the data obtained when the image was projected in the system having the known predetermined performance characteristic.

摘要翻译： 用于确定光刻工具中的性能特征的方法和装置包括用具有已知预定性能特征的投影系统投影预定图像，以获得指示投影图像的尺寸与预定性能特征之间的关系的数据。 然后将相同的图像投影在具有用于预定性能特征的未知值的系统中。 然后，基于在具有已知的预定性能特征的系统中投影图像时获得的数据来确定所考虑的系统的预定性能特性。

公开(公告)号：US5615006A

公开(公告)日：1997-03-25

申请号：US469514

申请日：1995-06-06

申请人： Shigeru Hirukawa ,  Shinjiro Kondo ,  Takeshi Kato ,  Kyoichi Suwa

发明人： Shigeru Hirukawa ,  Shinjiro Kondo ,  Takeshi Kato ,  Kyoichi Suwa

IPC分类号： G01M11/02 ,  G03F7/20 ,  G01B9/00 ,  G01M11/00

CPC分类号： G01M11/0264 ,  G01M11/0242 ,  G03F7/70558 ,  G03F7/706

摘要： A method of exposing images of measuring patterns formed on a mask on a photosensitive substrate through a projection optical system, measuring positional deviation quantities of the exposed images of the measuring patterns in a measuring direction and thus measuring imaging characteristics of the projection optical system on the basis of the measured positional deviation quantities. In this method, periodic patterns are used as the measuring patterns, wherein bright and dark portions are arranged at a predetermined pitch in a direction corresponding to the measuring direction. The positional deviation quantity is measured by assuming the image of the periodic pattern as an image of the pattern consisting of the single dark portion on the whole when measuring the positional deviation quantity of the periodic pattern image exposed on the photosensitive substrate in the measuring direction. The mask may be formed with measuring marks in which a plurality of pattern units consisting of periodic patterns having bright and dark portions arranged at the predetermined pitch are arranged in lattice at an interval larger than the predetermined pitch.

摘要翻译： 一种通过投影光学系统曝光在感光基板上的掩模上形成的测量图案的图像的方法，测量测量方向上的测量图案的曝光图像的位置偏差量，从而测量投影光学系统的成像特性 测量位置偏差量的基础。 在该方法中，使用周期性图案作为测量图案，其中亮部和暗部以与测量方向相对应的方向以预定间距排列。 当测量在感光基板上沿测量方向曝光的周期性图案图像的位置偏差量时，通过假设周期性图案的图像作为由整个单个暗部组成的图案的图像来测量位置偏差量。 掩模可以形成有测量标记，其中由具有以预定间距布置的明暗部分的周期性图案组成的多个图案单元以大于预定间距的间隔格格排列。

公开(公告)号：US4908656A

公开(公告)日：1990-03-13

申请号：US299236

申请日：1989-01-19

申请人： Kyoichi Suwa ,  Shigeru Hirukawa ,  Hiroki Tateno

发明人： Kyoichi Suwa ,  Shigeru Hirukawa ,  Hiroki Tateno

IPC分类号： G03F7/20 ,  G03F7/207

CPC分类号： G03F7/70558 ,  G03F7/20 ,  G03F7/70633 ,  G03F7/70641

摘要： An exposure method for use in an apparatus for projecting a pattern formed on a mask onto a photosensitive substrate through a projection optical system, comprises the steps of providing a mask bearing a pattern of which width gradually varies in a reference direction on the mask transferring the pattern onto the photosensitive substrate through the projection optical system measuring the length of pattern transferred onto the photosensitive substrate, in a reference direction on the substrate corresponding to the reference direction of the mask determining optimum exposure conditions for the projection exposure, from thus measured length of the pattern and controlling the exposure according to the conditions.

摘要翻译： 一种用于通过投影光学系统将形成在掩模上形成在掩模上的图案投影到感光基底上的装置的曝光方法包括以下步骤：提供一种掩模，该掩模承载在掩模上沿着基准方向逐渐变化的图案， 通过投影光学系统，通过投影光学系统将感光基板上转印的图案的长度沿着基板上的基准方向，对应于掩模的基准方向，确定用于投影曝光的最佳曝光条件，从该测量的长度 模式并根据条件控制曝光。

公开(公告)号：US5402224A

公开(公告)日：1995-03-28

申请号：US126393

申请日：1993-09-24

申请人： Shigeru Hirukawa ,  Nobutaka Magome ,  Kyoichi Suwa

发明人： Shigeru Hirukawa ,  Nobutaka Magome ,  Kyoichi Suwa

IPC分类号： G03F7/20 ,  G01B11/00

CPC分类号： G01M11/0264 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70675

摘要： A method for inspecting distortion characteristics of a projection optical system to be inspected by arranging a mask formed with measurement patterns at a plurality of predetermined positions on the object surface side of the projection optical system, transferring projected images of the plurality of measurement patterns onto a photosensitive substrate arranged on the image surface side of the projection optical system, and detecting transfer images of the measurement-patterns, includes:the step of exposing a mask, on which pairs of first and second measurement patterns are arranged adjacent to each other to be separated by a predetermined interval .DELTA.T in one direction at positions on the mask corresponding to a plurality of points at which distortion amounts are to be inspected in a projection view field of the projection optical system, onto the photosensitive substrate via the projection optical system;the step of exposing the mask onto the photosensitive substrate via the projection optical system after the mask and the photosensitive substrate are moved relative to each other by an amount determined by the interval .DELTA.T with respect to the state in the preceding step;the step of measuring relative displacements between overlapping images of the first and second measurement patterns at different image height points in the projection view field of the projection optical system; andthe step of calculating a value obtained by sequentially accumulating the measured relative displacements in units of image height values as a distortion amount at the corresponding image height point.

摘要翻译： 一种用于通过在投影光学系统的物体表面上的多个预定位置处布置形成有测量图案的掩模来检查要检查的投影光学系统的失真特性的方法，将多个测量图案的投影图像转印到 布置在投影光学系统的图像表面侧的感光基板和检测测量图案的转印图像包括：曝光掩模的步骤，第一和第二测量图案对彼此相邻配置成为 通过投影光学系统在投影光学系统的投影视场中将与要在失真量被检查的多个点对应的位置上的一个方向上分离预定间隔DELTA T到感光基板上; 在掩模和感光基板相对于前一步骤中的状态由间隔DELTA T确定的量相对于彼此移动之后，通过投影光学系统将掩模曝光到感光基板上的步骤; 测量投影光学系统的投影视场中不同图像高度点处的第一和第二测量图案的重叠图像之间的相对位移的步骤; 并且计算通过以图像高度值为单位将所测量的相对位移顺序地累积为在相应图像高度点处的失真量而获得的值的步骤。

公开(公告)号：US5838450A

公开(公告)日：1998-11-17

申请号：US457710

申请日：1995-06-02

申请人： John H. McCoy ,  Martin E. Lee ,  Kyoichi Suwa

发明人： John H. McCoy ,  Martin E. Lee ,  Kyoichi Suwa

IPC分类号： G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F9/7084 ,  G03F7/70358 ,  G03F7/70425 ,  G03F9/7076

摘要： A mask alignment system for integrated circuit lithography achieves reticle to wafer referencing. A detection system located below the main projection lens detects the image of reticle alignment marks while also detecting wafer alignment marks. The reticle marks are imaged in light at the exposure wavelength. A first detection method images the fluorescence produced in the photoresist by the reticle mark images. A microscope located below the main projection lens produces the image and also images the wafer marks with broadband non-actinic illumination. The second method images the reticle marks in exposure light using a microscope which images and detects the exposure wavelength while maintaining the illumination and detection of the wafer marks. The third method collects directly both the exposure light and fluorescent light that is scattered and reflected from the wafer surface; the presence of wafer alignment marks changes this light collection. Scanning the wafer relative to the reticle produces a signal indicating the relative position of reticle and wafer alignment marks. All three methods provide information for complete field-by-field alignment including offsets, reticle-to-wafer magnification, rotation, and skew for both step-and-repeat and scanning exposure systems.

摘要翻译： 用于集成电路光刻的掩模对准系统实现了光栅到晶片参考。 位于主投影透镜下方的检测系统检测标线对准标记的图像，同时检测晶片对准标记。 掩模版标记以曝光波长的光照成像。 第一检测方法通过标线图像对在光致抗蚀剂中产生的荧光进行成像。 位于主投影透镜下方的显微镜产生图像，并且还利用宽带非光化照明对晶片标记进行成像。 第二种方法使用显微镜在曝光光下对掩模版标记进行成像，并在保持照明和晶片标记的检测的同时检测曝光波长。 第三种方法直接收集从晶片表面散射和反射的曝光光和荧光; 晶片对准标记的存在会改变这种光集合。 相对于掩模版扫描晶片产生指示标线片和晶片对准标记的相对位置的信号。 所有这三种方法提供了完整的逐场校准的信息，包括步进重复扫描和扫描曝光系统的偏移量，标尺到晶圆倍率，旋转和偏斜。

公开(公告)号：US5777729A

公开(公告)日：1998-07-07

申请号：US644649

申请日：1996-05-07

申请人： Arun A. Aiyer ,  John H. McCoy ,  Kyoichi Suwa ,  Henry K. Chau

发明人： Arun A. Aiyer ,  John H. McCoy ,  Kyoichi Suwa ,  Henry K. Chau

IPC分类号： G01N21/88 ,  G01N21/47 ,  G01N21/94 ,  G01N21/956 ,  H01L21/66 ,  G01N21/00

CPC分类号： G01N21/8806 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956

摘要： Defects in a processed or partly processed semiconductor wafer, or other similar three-dimensional periodic pattern formed on a substrate surface, are detected by light diffraction. Incident monochromatic light is provided from an elongated and extended source to illuminate the entire wafer surface. By use of automated image processing techniques, wafer macro inspection is thereby automated. The elongated and extended light source allows light at different angles to be incident upon each point of the wafer surface, thereby allowing defect detection for an entire wafer surface in a single field of view and reducing inspection time. The particular wavelength of the incident monochromatic light is predetermined to allow optimum detection of defects in the periodic pattern on the wafer, depending on the width and pitch of the features of the periodic pattern.

摘要翻译： 通过光衍射检测经处理或部分处理的半导体晶片或形成在基板表面上的其它类似三维周期图案的缺陷。 入射单色光从细长的和延伸的源提供，以照亮整个晶片表面。 通过使用自动图像处理技术，晶片宏观检查因此被自动化。 细长的和延伸的光源允许以不同角度的光入射到晶片表面的每个点上，从而允许在单个视场中的整个晶片表面的缺陷检测并减少检查时间。 入射单色光的特定波长是预定的，以允许根据周期性图案的特征的宽度和间距来最佳地检测晶片上的周期性图案中的缺陷。

公开(公告)号：US4592625A

公开(公告)日：1986-06-03

申请号：US469015

申请日：1983-02-23

申请人： Makoto Uehara ,  Satoru Anzai ,  Kyoichi Suwa

发明人： Makoto Uehara ,  Satoru Anzai ,  Kyoichi Suwa

IPC分类号： G02B13/22 ,  G02B19/00 ,  G02B21/08 ,  G02B27/00 ,  G03F7/20 ,  G01B11/00

CPC分类号： G03F7/70241 ,  G02B13/22

摘要： A double-conjugate maintaining optical system for maintaining the conjugate relation between an object and its image even if the distance between the object and the image varies and also maintaining another set of conjugate relation in a predetermined condition includes an afocal system comprising a plurality of lens units, a first positive lens unit disposed on the object side of the afocal system, and a second positive lens unit disposed on the image side of the afocal system. The first positive lens unit is movable relative to the second positive lens unit so that the object is positioned on the focal plane of the first positive lens unit opposite to the afocal system. The afocal system is movable along the optical axis thereof in a predetermined relation with the first positive lens unit.

摘要翻译： 即使物体与图像之间的距离发生变化并且在预定条件下也保持另一组共轭关系的双重共轭维持光学系统，用于保持物体与其图像之间的共轭关系，包括包括多个透镜的无焦点系统 设置在无焦点系统的物体侧的第一正透镜单元和设置在无焦系统的像侧上的第二正透镜单元。 第一正透镜单元可相对于第二正透镜单元移动，使得物体位于与无焦系统相对的第一正透镜单元的焦平面上。 无焦点系统可以沿其光轴以与第一正透镜单元预定的关系移动。

公开(公告)号：US4566795A

公开(公告)日：1986-01-28

申请号：US586639

申请日：1984-03-06

申请人： Toshio Matsuura ,  Kyoichi Suwa

发明人： Toshio Matsuura ,  Kyoichi Suwa

IPC分类号： H01L21/30 ,  G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G01B11/27

CPC分类号： G03F9/7046 ,  G03F7/70358 ,  G03F9/7049

摘要： An alignment apparatus for aligning one of the substrates with the other by means of first and second reference marks comprises scanning means including a light beam generating means for reciprocally scanning first and second areas respectively by a light beam, discrimination means for generating a discrimination signal indicative of the scanning direction by the scanning means in synchronism with the scanning, first photoelectric means for generating a first signal when the first photoelectric means receives the light beam transmitted through a first area and separated by the first reference mark, second photoelectric means for generating a second signal when the second photoelectric means receives the light beam transmitted through the second area and separated by the second reference mark, operation means for determining the direction and amount of the relative deviation between the first and second reference marks from the first and second signals and from the discrimination signal, and means for moving one of the substrates relative to the other in response to the operation means. The alignment apparatus is simple in structure and can detect alignment marks with higher accuracy. The alignment apparatus enables the alignment of a wafer with a reticle or mask at higher speed and with higher preciseness.

摘要翻译： 用于通过第一和第二参考标记将一个基板与另一个基板对准的对准装置包括扫描装置，其包括用于分别由光束往复扫描第一和第二区域的光束产生装置，用于产生指示 所述第一光电装置用于当所述第一光电装置接收到透过第一区域并被所述第一参考标记分开的光束时产生第一信号;第二光电装置，用于产生第一信号， 第二信号，当第二光电装置接收到通过第二区域传输并被第二参考标记分隔的光束时，用于确定第一和第二参考标记与第一和第二信号之间的相对偏离的方向和量的操作装置，以及 从辨别信号 以及用于响应于操作装置移动基板之一相对于另一个的装置。 对准装置结构简单，可以更精确地检测对准标记。 对准装置使得能够以更高的速度和更高的精度将晶片与掩模版或掩模对准。