公开(公告)号：US20250133971A1

公开(公告)日：2025-04-24

申请号：US18783415

申请日：2024-07-25

Applicant: SK hynix Inc. ,  Kioxia Corporation

Inventor： Jeong Myeong KIM ,  Cha Deok DONG ,  Keo Rock CHOI ,  Hyungjun CHO ,  Hyung-Woo AHN

IPC: H10N70/00 ,  H10B63/00 ,  H10N70/20

Abstract: A selector includes a base material including carbon; and a dopant implanted into the base material. A method for fabricating a selector includes forming a carbon layer and implanting a dopant into the carbon layer. A semiconductor device includes a selector pattern including carbon as a base material and a dopant implanted through an ion implantation process; and a memory pattern disposed in an upper portion or a lower portion of the selector pattern.

公开(公告)号：US20240099021A1

公开(公告)日：2024-03-21

申请号：US18465759

申请日：2023-09-12

Applicant: Kioxia Corporation

Inventor： Naoki AKIYAMA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Hyungjun CHO ,  Takuya SHIMANO

IPC: H10B61/00

CPC classification number: H10B61/10

Abstract: According to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. As viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. The lower insulating layer has a void under a region between the first and second memory cells.

公开(公告)号：US20240324242A1

公开(公告)日：2024-09-26

申请号：US18605999

申请日：2024-03-15

Applicant: Kioxia Corporation

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Kenichi YOSHINO ,  Hyungjun CHO ,  Naoki AKIYAMA ,  Takuya SHIMANO

IPC: H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10B61/10 ,  H10N50/10 ,  H10N50/80

Abstract: According to one embodiment, a memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line, and including a magnetoresistance effect element, a switching element, a middle electrode provided between the magnetoresistance effect element and the switching element, and a resistive layer provided between the magnetoresistance effect element and the second wiring line. A resistance of the resistive layer is higher than a resistance of the middle electrode.

公开(公告)号：US20240099156A1

公开(公告)日：2024-03-21

申请号：US18466868

申请日：2023-09-14

Applicant: Kioxia Corporation

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Kenichi YOSHINO ,  Hyungjun CHO ,  Naoki AKIYAMA ,  Takuya SHIMANO ,  Tadaaki OIKAWA

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20

CPC classification number: H10N50/80 ,  H10B61/10 ,  H10N50/01 ,  H10N50/20

Abstract: According to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. The electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).

公开(公告)号：US20250087260A1

公开(公告)日：2025-03-13

申请号：US18828809

申请日：2024-09-09

Applicant: Kioxia Corporation

Inventor： Hyung-Woo AHN ,  Hyungjun CHO ,  Takuya SHIMANO ,  Naoki AKIYAMA ,  Kenichi YOSHINO

IPC: G11C11/16 ,  G11C5/08 ,  H10B61/00 ,  H10B63/00 ,  H10N50/10 ,  H10N70/00

Abstract: According to one embodiment, a storage device includes a stacked layer structure including a switching element, an electrode including a first electrode portion, and a variable resistance element, which are stacked in a first direction, wherein the switching element and the electrode are in contact with each other in the first direction, and a first face of the first electrode portion on a side of the switching element is in contact with a second face that is inside the stacked layer structure and that is larger than the first face.

公开(公告)号：US20240315049A1

公开(公告)日：2024-09-19

申请号：US18599920

申请日：2024-03-08

Applicant: Kioxia Corporation

Inventor： Takuya SHIMANO ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Naoki AKIYAMA ,  Hyungjun CHO

IPC: H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

CPC classification number: H10B61/10 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

Abstract: According to one embodiment, a magnetic memory device includes a switching element; a magnetoresistive effect element; and an electrode provided between the switching element and the magnetoresistive effect element, wherein the electrode includes a first sub-electrode in contact with the switching element, a second sub-electrode in contact with the magnetoresistive effect element, and a third sub-electrode provided between the first sub-electrode and the second sub-electrode, wherein the first sub-electrode and the second sub-electrode includes at least one of C and CN, and wherein the third sub-electrode includes at least one of a high melting point metal element and a compound of the high melting point metal element.

公开(公告)号：US20240324470A1

公开(公告)日：2024-09-26

申请号：US18606182

申请日：2024-03-15

Applicant: Kioxia Corporation

Inventor： Naoki AKIYAMA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Takuya SHIMANO ,  Hyungjun CHO

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10

CPC classification number: H10N50/80 ,  H10B61/10 ,  H10N50/01 ,  H10N50/10

Abstract: According to one embodiment, a magnetic memory device includes a lower structure, a bottom electrode provided on the lower structure and formed of a conductive material, a top electrode provided above the bottom electrode, a magnetoresistance effect element provided between the bottom electrode and the top electrode, and an oxide insulating layer including a first portion provided on a side surface of the bottom electrode and a second portion provided on a side surface of the magnetoresistance effect element, and formed of an oxide of the conductive material.

公开(公告)号：US20240099158A1

公开(公告)日：2024-03-21

申请号：US18466727

申请日：2023-09-13

Applicant: Kioxia Corporation

Inventor： Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Kazuya SAWADA ,  Naoki AKIYAMA ,  Takuya SHIMANO ,  Hyungjun CHO

IPC: H10N50/85 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10

CPC classification number: H10N50/85 ,  G11C11/161 ,  H10B61/00 ,  H10N50/10

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).

公开(公告)号：US20230292529A1

公开(公告)日：2023-09-14

申请号：US17943160

申请日：2022-09-12

Applicant: Kioxia Corporation

Inventor： Naoki AKIYAMA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Hyungjun CHO ,  Takuya SHIMANO

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L27/224 ,  H01L43/02 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode, and the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material.