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    MANUFACTURING APPARATUS AND MEMORY DEVICE
    1.
    发明申请
    MANUFACTURING APPARATUS AND MEMORY DEVICE 有权

    公开(公告)号：US20250098544A1

    公开(公告)日：2025-03-20

    申请号：US18829993

    申请日：2024-09-10

    Applicant: Kioxia Corporation

    Inventor： Takuya SHIMANO ,  Kenichi YOSHINO ,  Naoki AKIYAMA

    IPC: H10N50/01 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

    Abstract: According to one embodiment, a manufacturing apparatus includes: a wafer holding unit configured to hold a wafer; an ion source configured to output an ion beam; a shutter holding unit configured to hold a shutter and place the shutter between the wafer holding unit and the ion source in a case of preventing irradiation of the wafer with the ion beam; and a target holding unit configured to hold a target including a through hole, and place the target between the wafer holding unit and the ion source in a case of forming, on the wafer, a first layer including a member of the target.

    STORAGE DEVICE
    2.
    发明申请
    STORAGE DEVICE 有权

    公开(公告)号：US20250087260A1

    公开(公告)日：2025-03-13

    申请号：US18828809

    申请日：2024-09-09

    Applicant: Kioxia Corporation

    Inventor： Hyung-Woo AHN ,  Hyungjun CHO ,  Takuya SHIMANO ,  Naoki AKIYAMA ,  Kenichi YOSHINO

    IPC: G11C11/16 ,  G11C5/08 ,  H10B61/00 ,  H10B63/00 ,  H10N50/10 ,  H10N70/00

    Abstract: According to one embodiment, a storage device includes a stacked layer structure including a switching element, an electrode including a first electrode portion, and a variable resistance element, which are stacked in a first direction, wherein the switching element and the electrode are in contact with each other in the first direction, and a first face of the first electrode portion on a side of the switching element is in contact with a second face that is inside the stacked layer structure and that is larger than the first face.

    MAGNETIC MEMORY DEVICE
    4.
    发明公开
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20240099021A1

    公开(公告)日：2024-03-21

    申请号：US18465759

    申请日：2023-09-12

    Applicant: Kioxia Corporation

    Inventor： Naoki AKIYAMA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Hyungjun CHO ,  Takuya SHIMANO

    IPC: H10B61/00

    CPC classification number: H10B61/10

    Abstract: According to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. As viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. The lower insulating layer has a void under a region between the first and second memory cells.

    MEMORY DEVICE
    6.
    发明公开
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20240324242A1

    公开(公告)日：2024-09-26

    申请号：US18605999

    申请日：2024-03-15

    Applicant: Kioxia Corporation

    Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Kenichi YOSHINO ,  Hyungjun CHO ,  Naoki AKIYAMA ,  Takuya SHIMANO

    IPC: H10B61/00 ,  H10N50/10 ,  H10N50/80

    CPC classification number: H10B61/10 ,  H10N50/10 ,  H10N50/80

    Abstract: According to one embodiment, a memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line, and including a magnetoresistance effect element, a switching element, a middle electrode provided between the magnetoresistance effect element and the switching element, and a resistive layer provided between the magnetoresistance effect element and the second wiring line. A resistance of the resistive layer is higher than a resistance of the middle electrode.

    MAGNETIC MEMORY DEVICE
    10.
    发明公开
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20240099158A1

    公开(公告)日：2024-03-21

    申请号：US18466727

    申请日：2023-09-13

    Applicant: Kioxia Corporation

    Inventor： Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Kazuya SAWADA ,  Naoki AKIYAMA ,  Takuya SHIMANO ,  Hyungjun CHO

    IPC: H10N50/85 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10

    CPC classification number: H10N50/85 ,  G11C11/161 ,  H10B61/00 ,  H10N50/10

    Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).

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