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公开(公告)号：US11758739B2
公开(公告)日：2023-09-12
申请号：US17371138
申请日：2021-07-09
申请人： Kioxia Corporation
发明人： Masayoshi Iwayama , Tatsuya Kishi , Masahiko Nakayama , Toshihiko Nagase , Daisuke Watanabe , Tadashi Kai
IPC分类号： H01L27/108 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
摘要： A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.
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公开(公告)号：US11875834B2
公开(公告)日：2024-01-16
申请号：US17465080
申请日：2021-09-02
申请人： Kioxia Corporation
发明人： Masayoshi Iwayama
CPC分类号： G11C11/161 , G06F13/4027 , G11C11/1655 , G11C11/1657 , G11C11/1659 , H10B61/10
摘要： According to one embodiment, a magnetic memory device includes a first memory cell and a control circuit. The first memory cell includes a first magnetoresistance effect element and a first switching element coupled in series. The control circuit is configured to repeatedly apply a first voltage to the first memory cell until a first condition is satisfied in a first operation.
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公开(公告)号：US12087343B2
公开(公告)日：2024-09-10
申请号：US17693790
申请日：2022-03-14
申请人： Kioxia Corporation
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1673 , H10B61/00 , H10N50/80
摘要： A magnetic memory device includes a first interconnect, a second interconnect, a memory cell, and a write circuit. The memory cell is electrically coupled between the first interconnect and the second interconnect, and includes a variable resistance element and a switching element. The write circuit supplies a write voltage from the current source circuit or the voltage source circuit to write data into the memory cell. The write circuit supplies the write voltage to one of the first interconnect and the second interconnect using the voltage source circuit during a first period ranging from a first time to a second time. The write circuit supplies the write voltage to one of the first interconnect and the second interconnect using the current source circuit during a second period ranging from a third time to a fourth time.
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公开(公告)号：US12133394B2
公开(公告)日：2024-10-29
申请号：US18229133
申请日：2023-08-01
申请人： Kioxia Corporation
发明人： Masayoshi Iwayama , Tatsuya Kishi , Masahiko Nakayama , Toshihiko Nagase , Daisuke Watanabe , Tadashi Kai
摘要： A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.
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