公开(公告)号：US20230298685A1

公开(公告)日：2023-09-21

申请号：US17896887

申请日：2022-08-26

Applicant: KIOXIA CORPORATION

Inventor： Motoki SHIMIZU ,  Kenji SAKURADA ,  Naoto KUMANO

IPC: G11C29/52 ,  G11C29/02 ,  G11C8/08 ,  H03M13/11

CPC classification number: G11C29/52 ,  G11C29/021 ,  G11C8/08 ,  H03M13/1125

Abstract: A memory system includes a semiconductor memory device including a plurality of memory cells each configured to store data in a non-volatile manner according to a threshold voltage thereof and connected to a word line, and a controller configured to perform an error correction based on hard bit data and soft bit data read from the plurality of memory cells, generate a first table based on corrected data, determine a voltage difference between a first voltage and a second voltage, the first voltage being a voltage applied to the word line when the data being corrected is read, and correct the first table based on the voltage difference.

公开(公告)号：US20250157564A1

公开(公告)日：2025-05-15

申请号：US19021029

申请日：2025-01-14

Applicant: Kioxia Corporation

Inventor： Motoki SHIMIZU ,  Kenji SAKURADA ,  Naoto KUMANO

IPC: G11C29/52 ,  G11C8/08 ,  G11C29/02 ,  H03M13/11

Abstract: A memory system includes a semiconductor memory device including a plurality of memory cells each configured to store data in a non-volatile manner according to a threshold voltage thereof and connected to a word line, and a controller configured to perform an error correction based on hard bit data and soft bit data read from the plurality of memory cells, generate a first table based on corrected data, determine a voltage difference between a first voltage and a second voltage, the first voltage being a voltage applied to the word line when the data being corrected is read, and correct the first table based on the voltage difference.