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公开(公告)号：US20210272640A1
公开(公告)日：2021-09-02
申请号：US17014776
申请日：2020-09-08
Applicant: KIOXIA CORPORATION
Inventor： Tatsuo OGURA , Takashi KURUSU , Muneyuki TSUDA , Hiroshi TAKEDA , Nayuta KARIYA
Abstract: A semiconductor memory device includes a plurality of conductive layers, a semiconductor layer opposed to the plurality of conductive layers, and an electric charge accumulation portion disposed between the semiconductor layer and the plurality of conductive layers. The electric charge accumulation portion includes a plurality of first electric charge accumulation portions opposed to the plurality of conductive layers, and a plurality of second electric charge accumulation portions disposed in positions different from the plurality of first electric charge accumulation portions. A distance between the first electric charge accumulation portion and the semiconductor layer is smaller than a distance between the second electric charge accumulation portion and the semiconductor layer. A distance between the second electric charge accumulation portion and the conductive layers is smaller than a distance between the first electric charge accumulation portion and the conductive layers.
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公开(公告)号：US20220310640A1
公开(公告)日：2022-09-29
申请号：US17460967
申请日：2021-08-30
Applicant: Kioxia Corporation
Inventor： Natsuki FUKUDA , Ryota NARASAKI , Takashi KURUSU , Yuta KAMIYA , Kazuhiro MATSUO , Shinji MORI , Shoji HONDA , Takafumi OCHIAI , Hiroyuki YAMASHITA , Junichi KANEYAMA , Ha HOANG , Yuta SAITO , Kota TAKAHASHI , Tomoki ISHIMARU , Kenichiro TORATANI
IPC: H01L27/11556 , H01L27/11519 , H01L27/11565 , H01L27/11582
Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.
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公开(公告)号：US20240324215A1
公开(公告)日：2024-09-26
申请号：US18595336
申请日：2024-03-04
Applicant: Kioxia Corporation
Inventor： Takashi KURUSU , Koji SHIRAI
Abstract: A semiconductor memory device includes a stacked body in which conductive layers and insulating layers are alternately stacked in a first direction, a columnar body in the stacked body and extending in the first direction, and a source line layer. The columnar body includes a core insulating layer, a semiconductor layer surrounding the core insulating layer, and a memory layer surrounding the semiconductor layer. A portion of the source line layer extends in the first direction to be provided in the stacked body, has a side surface in contact with the semiconductor layer and an end face in contact with the core insulating layer, and includes a pointed portion on the end face at an interface of the portion, the core insulating layer, and the semiconductor layer, wherein the end face and the side surface of the semiconductor layer form an acute angle at the pointed portion.
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