公开(公告)号：US20080141807A1

公开(公告)日：2008-06-19

申请号：US11950727

申请日：2007-12-05

申请人： Kiyoshi KIMURA ,  Taku Itoh ,  Shigeru Yoshiyama

发明人： Kiyoshi KIMURA ,  Taku Itoh ,  Shigeru Yoshiyama

IPC分类号： F16H59/08

CPC分类号： F16H61/32 ,  F16H59/08 ,  F16H63/48 ,  F16H2061/326 ,  Y10T74/19251

摘要： A shift range switching device is provided to a shift-by-wire system for an automatic transmission device. The shift range switching device includes a range switching unit for switching a shift range of the automatic transmission device between a P range and the other range. The shift range switching device further includes an actuator including an electric motor and a reduction device. The reduction device transmits driving force of the electric motor to the range switching unit for actuating the range switching unit as instructed. The reduction device has a variable reduction ratio. The reduction device transmits the driving force in switching of the shift range from the P range to the other range at a reduction ratio, which is greater than a reduction ratio in switching of the shift range from the other range to the P range.

摘要翻译： 变速范围切换装置被提供给用于自动变速装置的线控换档系统。 变速范围切换装置包括用于在P范围与另一范围之间切换自动变速装置的换档范围的换档单元。 变速范围切换装置还包括具有电动机和减速装置的致动器。 还原装置将电动机的驱动力传递到范围切换单元，以按照指示来驱动范围切换单元。 还原装置具有可变减速比。 减速装置将变速范围从P范围切换到另一范围的驱动力以比从其他范围向P范围的换档范围的切换的减速比大的减速比传递。

公开(公告)号：US20090058208A1

公开(公告)日：2009-03-05

申请号：US12203359

申请日：2008-09-03

申请人： Kiyoshi KIMURA ,  Shigeru Yoshiyama

发明人： Kiyoshi KIMURA ,  Shigeru Yoshiyama

IPC分类号： H02P29/04 ,  H02K7/116

CPC分类号： H02K5/1732 ,  F16H61/32 ,  H02K5/24 ,  H02K15/16

摘要： In an electric motor of an SBW actuator, a rotor shaft is rotated upon energization of the motor. A rotor core is rotated integrally with the rotor shaft. A resilient member enables tilting or decentering of the rotor shaft upon application of a decentering force on the rotor shaft. A stator core contacts the rotor core when the rotor shaft is tilted or decentered.

摘要翻译： 在SBW致动器的电动机中，转子轴在电动机通电时旋转。 转子芯与转子轴一体旋转。 弹性构件能够在转子轴上施加偏心力时使转子轴倾斜或偏心。 当转子轴倾斜或偏心时，定子芯与转子芯接触。

公开(公告)号：US20090120222A1

公开(公告)日：2009-05-14

申请号：US12262480

申请日：2008-10-31

申请人： Kiyoshi KIMURA ,  Shigeru Kamio

发明人： Kiyoshi KIMURA ,  Shigeru Kamio

IPC分类号： F16H59/08

CPC分类号： F16H61/32 ,  F16H63/3416 ,  F16H2061/326 ,  Y10T74/19251 ,  Y10T477/68

摘要： A motor needs to provide a first torque at the time of releasing a shift range from a parking range and needs to provide a second torque smaller than the first torque at the time of placing the shift range into the parking range. Also, the motor needs to provide a third torque smaller than the second torque at the time of changing the shift range from one non-parking range to another non-parking range and needs to provide a fourth torque smaller than the third torque at the time of executing the parking range wall abutment learning. When the parking range wall abutment learning is executed from the parking range, a motor control apparatus controls the torque to the third or fourth torque. When the parking range wall abutment learning is executed from any non-parking range, the motor control apparatus controls the torque to the first or second torque.

摘要翻译： 电动机需要在从停车范围中释放换档范围时提供第一扭矩，并且需要在将换档范围放置在停车范围时提供小于第一扭矩的第二扭矩。 此外，电动机需要在将变速范围从一个非停车范围改变到另一个非停车范围时提供小于第二转矩的第三转矩，并且需要提供比此时的第三转矩小的第四转矩 执行停车场墙基台学习。 当从停车范围执行停车场壁基台学习时，马达控制装置将扭矩控制到第三或第四扭矩。 当从任何非停车范围执行停车范围壁基台学习时，马达控制装置将扭矩控制为第一或第二扭矩。

公开(公告)号：US20120061721A1

公开(公告)日：2012-03-15

申请号：US13229203

申请日：2011-09-09

申请人： Kiyoshi KIMURA ,  Yasuto SUMI ,  Hiroshi OHTA ,  Hiroyuki IRIFUNE

发明人： Kiyoshi KIMURA ,  Yasuto SUMI ,  Hiroshi OHTA ,  Hiroyuki IRIFUNE

IPC分类号： H01L27/082 ,  H01L21/331

CPC分类号： H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/872

摘要： A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers. The plurality of third second-conductivity-type pillar layers are arranged on the first epitaxial layer.

摘要翻译： 功率半导体器件包括第一导电类型的第一半导体层，第一漂移层和第二漂移层。 第一漂移层包括第一导电类型的第一外延层，多个第一第一导电型柱层和多个第一第二导电型柱层。 第二漂移层形成在第一漂移层上，并且包括第一导电类型的第二外延层，多个第二第二导电型柱层，多个第二第一导电型柱层，多个第二导电型柱层 第三第二导电型柱层和多个第三第一导电型柱层。 多个第二第二导电型柱层与第一第二导电型柱层连接。 多个第二第一导电型柱层与第一第一导电型柱层连接。 多个第三第二导电型柱层布置在第一外延层上。

公开(公告)号：US20110018055A1

公开(公告)日：2011-01-27

申请号：US12840201

申请日：2010-07-20

申请人： Hiroshi OHTA ,  Yasuto SUMI ,  Kiyoshi KIMURA ,  Wataru SEKINE ,  Wataru SAITO ,  Syotaro ONO ,  Munehisa YABUZAKI ,  Nana HATANO ,  Miho WATANABE

发明人： Hiroshi OHTA ,  Yasuto SUMI ,  Kiyoshi KIMURA ,  Wataru SEKINE ,  Wataru SAITO ,  Syotaro ONO ,  Munehisa YABUZAKI ,  Nana HATANO ,  Miho WATANABE

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66712 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7811

摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.

摘要翻译： 根据一个实施例，功率半导体器件包括第一半导体层以及第一，第二和第三半导体区域。 第一半导体层具有第一导电类型。 第一半导体区域具有第二导电类型，并且在第一导电类型的第二半导体层中在横向方向上形成周期性。 第二半导体层设置在器件部分的第一半导体层的主表面上，其主电流通道形成在大体上垂直于主表面的垂直方向上，以及设置在器件部分周围的端子部分中。 第二半导体区域具有第一导电类型，并且是夹在相邻的第一半导体区域中的第二半导体层的一部分。 第三半导体区域具有第二导电类型并且设置在端子部分中的第一半导体区域的下方。

公开(公告)号：US20130093003A1

公开(公告)日：2013-04-18

申请号：US13607255

申请日：2012-09-07

申请人： Hiroyuki IRIFUNE ,  Wataru SAITO ,  Yasuto SUMI ,  Kiyoshi KIMURA ,  Hiroshi OHTA ,  Junji SUZUKI

发明人： Hiroyuki IRIFUNE ,  Wataru SAITO ,  Yasuto SUMI ,  Kiyoshi KIMURA ,  Hiroshi OHTA ,  Junji SUZUKI

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/7811

摘要： A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third. diffusion layers are the same.

摘要翻译： 半导体器件包括各自具有多个扩散层的第一，第二和第三半导体层。 第一扩散层的第一方向宽度相同。 第一扩散层内的杂质量从第一半导体层的底端向顶端逐渐增加。 第二扩散层的第一方向宽度相同。 第二扩散层内的杂质量相同。 第三扩散层的第一方向宽度比第一扩散层的第一方向宽度和第二扩散层的第一方向宽度在相同水平处窄，并且从第一扩散层的第一方向宽度逐渐变窄到 第三半导体层。 第三者内的杂质量。 扩散层是相同的。

公开(公告)号：US20120074491A1

公开(公告)日：2012-03-29

申请号：US13234802

申请日：2011-09-16

申请人： Hiroshi OHTA ,  Yasuto SUMI ,  Kiyoshi KIMURA ,  Junji SUZUKI ,  Hiroyuki IRIFUNE ,  Wataru SAITO ,  Syotaro ONO

发明人： Hiroshi OHTA ,  Yasuto SUMI ,  Kiyoshi KIMURA ,  Junji SUZUKI ,  Hiroyuki IRIFUNE ,  Wataru SAITO ,  Syotaro ONO

IPC分类号： H01L27/088

CPC分类号： H01L29/78 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42356 ,  H01L29/42372 ,  H01L29/7811 ,  H01L29/7813

摘要： In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

摘要翻译： 通常，根据一个实施例，功率半导体器件包括在第一半导体层上的第一导电类型的第一柱状区域，第二柱状区域和外延层。 第一支柱区域由第一导电类型的多个第一支柱层和沿第一方向交替布置的第一导电类型的多个第二支柱层组成。 第二柱状区域沿着第一方向与第一柱状区域相邻，并且具有第二导电型的第三柱状层，第一导电型的第四柱状层和第二导电型的第五柱状层 沿着第一个方向。 多个第二导电类型的第二基极层分别电连接到第三柱层和第五柱层上并彼此间隔开。