公开(公告)号：US07344925B2

公开(公告)日：2008-03-18

申请号：US11064820

申请日：2005-02-25

申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/331

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

摘要翻译： 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体 通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

公开(公告)号：US20050158936A1

公开(公告)日：2005-07-21

申请号：US11064820

申请日：2005-02-25

申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/8234

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

公开(公告)号：US07541228B2

公开(公告)日：2009-06-02

申请号：US12003983

申请日：2008-01-04

申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/302

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

摘要翻译： 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体 通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

公开(公告)号：US07459726B2

公开(公告)日：2008-12-02

申请号：US10775328

申请日：2004-02-11

申请人： Kiyoshi Kato ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L31/12

CPC分类号： H01L27/1266 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/3209 ,  H01L27/3227 ,  H01L29/78603 ,  H01L29/78621

摘要： A semiconductor device which has a high performance integrated circuit formed of an inexpensive glass substrate and capable of processing a large amount of information and operating at higher data rates. The semiconductor device includes semiconductor elements stacked by transferring a semiconductor element formed on a different substrate. A resin film is formed between the stacked semiconductor elements and a metal oxide film is partially formed between the stacked semiconductor elements as well. A first electric signal is converted to an optical signal in a light emitting element electrically connected to one of the stacked semiconductor elements. Meanwhile, the optical signal is converted to a second electric signal in a light receiving element electrically connected to another one of the stacked semiconductor elements.

摘要翻译： 一种半导体器件，具有由便宜的玻璃基板形成的能够处理大量信息并以较高数据速率工作的高性能集成电路。 半导体器件包括通过转移形成在不同衬底上的半导体元件而堆叠的半导体元件。 在层叠的半导体元件之间形成树脂膜，并且也在层叠的半导体元件之间部分地形成金属氧化物膜。 第一电信号被转换成电连接到堆叠的半导体元件之一的发光元件中的光信号。 同时，光电信号被转换为与另一个堆叠的半导体元件电连接的光接收元件中的第二电信号。

公开(公告)号：US20080138943A1

公开(公告)日：2008-06-12

申请号：US12003983

申请日：2008-01-04

申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

公开(公告)号：US06875998B2

公开(公告)日：2005-04-05

申请号：US10395310

申请日：2003-03-25

申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

摘要翻译： 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体 通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

公开(公告)号：US08674493B2

公开(公告)日：2014-03-18

申请号：US13618384

申请日：2012-09-14

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

IPC分类号： H01L23/498

CPC分类号： G06K19/077 ,  G06K19/07703 ,  G06Q20/105 ,  G06Q20/3415 ,  G07F7/1008 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2224/45147

摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

摘要翻译： 本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部图像的伪造，以及显示其他图像以及脸部照片来确保安全性。 一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

公开(公告)号：US08634041B2

公开(公告)日：2014-01-21

申请号：US13466406

申请日：2012-05-08

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

IPC分类号： G02F1/1335

CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/133603 ,  G02F2001/13613 ,  H01L27/14678 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592

摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

摘要翻译： 为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板， 布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元， 电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

公开(公告)号：US08040456B2

公开(公告)日：2011-10-18

申请号：US10756833

申请日：2004-01-14

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

IPC分类号： G02F1/1335

CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/133603 ,  G02F2001/13613 ,  H01L27/14678 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592

摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

摘要翻译： 为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板， 布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元， 电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

公开(公告)号：US07518692B2

公开(公告)日：2009-04-14

申请号：US10739084

申请日：2003-12-19

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

IPC分类号： G02F1/1339 ,  G02F1/1345

CPC分类号： G06K19/07749 ,  G06K19/077 ,  G06K19/07703 ,  G06Q20/341 ,  G06Q20/40145 ,  G07F7/1008

摘要： It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film integrated circuit; wherein driving of the display device is controlled by the thin film integrated circuit; a semiconductor element used for the thin film integrated circuit and the display device is formed by using a polycrystalline semiconductor film; the thin film integrated circuit and the display device are sealed with a resin between a first substrate and a second substrate of the card; and the first substrate and the second substrate are plastic substrates.

摘要翻译： 本发明的目的是提供一种高度复杂的功能卡，其可以通过防止诸如改变脸部照片的伪造，以及显示其他图像以及脸部照片来确保安全性。 一种包括显示装置和薄膜集成电路的卡; 其中所述显示装置的驱动由所述薄膜集成电路控制; 通过使用多晶半导体膜形成用于薄膜集成电路的半导体元件和显示装置; 薄膜集成电路和显示装置用卡在第一基板和第二基板之间的树脂密封; 并且第一基板和第二基板是塑料基板。