SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20120202330A1

    公开(公告)日:2012-08-09

    申请号:US13367884

    申请日:2012-02-07

    Abstract: The present invention provides a semiconductor device including SRAM cell units each including a data holding section made up of a pair of driving transistors and a pair of load transistors, a data write section made up of a pair of access transistors, and a data read section made up of an access transistor and a driving transistor, wherein each of the transistors includes a semiconductor layer projecting upward from a base plane, a gate electrode extending from a top to opposite side surfaces of the semiconductor layer so as to stride the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and source/drain areas, a longitudinal direction of each of the semiconductor layers is provided along a first direction, and for all the corresponding transistors between the SRAM cell units adjacent to each other in the first direction, the semiconductor layer in one of the corresponding transistors is located on a center line of the semiconductor layer along the first direction in the other transistor.

    Abstract translation: 本发明提供了包括SRAM单元单元的半导体器件,每个SRAM单元包括由一对驱动晶体管和一对负载晶体管构成的数据保持部分,由一对存取晶体管构成的数据写入部分和数据读取部分 由存取晶体管和驱动晶体管构成,其中每个晶体管包括从基板向上突出的半导体层,从半导体层的顶部延伸到相对侧表面的栅电极,以跨越半导体层, 栅极电极和半导体层之间的栅极绝缘膜以及源极/漏极区域,沿着第一方向设置每个半导体层的纵向方向,并且对于彼此相邻的SRAM单元单元之间的所有对应的晶体管 在第一方向上,一个对应的晶体管中的半导体层位于半导体1a的中心线上 沿另一个晶体管的第一个方向。

    EVALUATION METHOD, EVALUATION APPARATUS, AND SIMULATION METHOD OF SEMICONDUCTOR DEVICE
    3.
    发明申请
    EVALUATION METHOD, EVALUATION APPARATUS, AND SIMULATION METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    评估方法,评估装置和半导体器件的仿真方法

    公开(公告)号:US20120065920A1

    公开(公告)日:2012-03-15

    申请号:US13222019

    申请日:2011-08-31

    CPC classification number: G01R31/2621

    Abstract: An evaluation method of a semiconductor device according to an aspect of the present invention includes MISFETs including a gate insulating film, the evaluation method including measuring an RTN of a plurality of MISFETs, and extracting at least two parameters selected from a position of a trap in the gate insulating film, an energy of the trap, an RTN time constant, and an RTN amplitude based on a measurement result of the RTN, and obtaining a correlation between these at least two parameters.

    Abstract translation: 根据本发明的一个方面的半导体器件的评估方法包括具有栅极绝缘膜的MISFET,所述评估方法包括测量多个MISFET的RTN,以及从陷阱的位置中提取至少两个参数 栅极绝缘膜,阱的能量,RTN时间常数和基于RTN的测量结果的RTN振幅,并且获得这些至少两个参数之间的相关性。

    INFORMATION STORAGE DEVICE AND TEST METHOD THEREFOR
    5.
    发明申请
    INFORMATION STORAGE DEVICE AND TEST METHOD THEREFOR 有权
    信息存储设备及其测试方法

    公开(公告)号:US20110179321A1

    公开(公告)日:2011-07-21

    申请号:US13010363

    申请日:2011-01-20

    Inventor: Kiyoshi TAKEUCHI

    Abstract: A method of testing the operational margin of an information storage device having marked random variations, and an information storage device having the function of self-diagnosing the operational margin, are provided. The test method includes testing an information storage device including a plurality of memory bits as the test condition is set so as to be outside a range of conditions that may be presupposed in real use of the information storage device and of counting the number of memory bits that fail in operation. The test method also includes verifying the size of the operational margin of the information storage device based on the count value. The test condition is made severe and the reference value is set to a fairly large value to enable the operational margin against the noise to be tested highly accurately.

    Abstract translation: 提供一种测试具有标记的随机变化的信息存储设备的操作余量的方法,以及具有自诊断操作余量功能的信息存储设备。 测试方法包括测试包括多个存储器位的信息存储设备,因为测试条件被设置为处于实际使用信息存储设备的前提条件范围内,并且对存储器位数进行计数 失败了。 测试方法还包括基于计数值验证信息存储设备的操作余量的大小。 测试条件变得严重,参考值被设置为相当大的值,以使得能够高精度地测试噪声的操作余量。

    MANUFACTURING PROCESS OF FIN-TYPE FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR
    6.
    发明申请
    MANUFACTURING PROCESS OF FIN-TYPE FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR 失效
    微型场效应晶体管和半导体的制造工艺

    公开(公告)号:US20110059584A1

    公开(公告)日:2011-03-10

    申请号:US12946034

    申请日:2010-11-15

    Abstract: A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode including an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion includes an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.

    Abstract translation: 通过形成包括屋顶结构的栅极电极,可以在源/漏区之间保持恒定的距离,而不需要提供栅极侧壁,并且通过离子注入将均匀的掺杂剂浓度保持在半导体内。 结果,可以获得元件性能和操作性能优异的FinFET。 一种场效应晶体管,其中栅极结构体是在沟道长度方向上朝向源极和漏极区域侧突出的突起,并且沟道长度方向宽度大于栅电极中与绝缘膜相邻的部分的沟道长度方向宽度;以及 突起包括由半导体层的顶表面上沿栅电极延伸方向延伸的突起形成的檐结构。

    DOUBLE RACK AND PINION OSCILLATING DEVICE
    7.
    发明申请
    DOUBLE RACK AND PINION OSCILLATING DEVICE 有权
    双机架和PINION振荡器

    公开(公告)号:US20100064834A1

    公开(公告)日:2010-03-18

    申请号:US12553376

    申请日:2009-09-03

    CPC classification number: F15B15/065 F15B15/1433 F15B15/149

    Abstract: A plurality of ring-shaped sealing members are spaced from each other on the outer periphery of each of first and second end caps that seal openings of first and second cylinder holes. Ring-shaped flow paths are formed between adjacent ring-shaped sealing members. Parts of air flow paths that supply and discharge compressed air to and from pressure chambers of the cylinder holes are formed by the ring-shaped flow paths.

    Abstract translation: 多个环形密封构件在第一和第二端盖的每个的外周上彼此间隔开,从而密封第一和第二气缸孔的开口。 在相邻的环形密封件之间形成环形流路。 通过环形流路形成向气缸孔的压力室供给和排出压缩空气的空气流路的一部分。

    DISEASE NAME INPUT SUPPORT PROGRAM, METHOD AND APPARATUS
    8.
    发明申请
    DISEASE NAME INPUT SUPPORT PROGRAM, METHOD AND APPARATUS 审中-公开
    疾病名称输入支持程序,方法和设备

    公开(公告)号:US20090287663A1

    公开(公告)日:2009-11-19

    申请号:US12504347

    申请日:2009-07-16

    Inventor: Kiyoshi TAKEUCHI

    CPC classification number: G06F19/324 G16H10/60 G16H50/20

    Abstract: This disease name input support method includes: obtaining type data of a schema selected by a user and identification data of a region on the schema, which is identified by the user, and storing obtained data into a storage device; searching a disease name knowledge storage device storing an inputted disease name in association with the type data of the schema and the identification data of the region on the schema by using the obtained type data of the schema and the obtained identification data of the region on the schema, which are stored in the storage device, to extract a corresponding disease name; and presenting the extracted corresponding disease name as an input candidate disease name to the user.

    Abstract translation: 该疾病名称输入支援方法包括:获取由用户选择的模式的类型数据和由用户识别的模式上的区域的识别数据,并将取得的数据存储到存储装置中; 通过使用所获得的模式的类型数据和所获得的区域的识别数据来搜索在模式上与模式的类型数据和区域的识别数据相关联地存储输入的疾病名称的疾病名称知识存储装置, 模式,存储在存储设备中,以提取相应的疾病名称; 并将所提取的相应疾病名称作为输入候选疾病名称呈现给用户。

    DYE-FORMING COUPLER, SILVER HALIDE PHOTOGRAPHIC LIGHT-SENSITIVE MATERIAL, AND AZOMETHINE DYE COMPOUND
    9.
    发明申请
    DYE-FORMING COUPLER, SILVER HALIDE PHOTOGRAPHIC LIGHT-SENSITIVE MATERIAL, AND AZOMETHINE DYE COMPOUND 审中-公开
    成色偶联剂,银盐摄影感光材料和氨基甲酸乙酯化合物

    公开(公告)号:US20080214810A1

    公开(公告)日:2008-09-04

    申请号:US12060080

    申请日:2008-03-31

    CPC classification number: C07D403/06 C07D239/94 G03C7/30535 G03C7/36

    Abstract: A dye-forming coupler of formula (I), a silver halide photographic light-sensitive material containing the coupler, and an azomethine dye compound derived from the coupler: wherein Q is a residue that forms, together with the —N—C═N— moiety, a nitrogen-containing 6-membered ring; RA is a certain alkyl group having at least 7 carbon atoms, or -L-R1; X is an aryl group; Y is a hydrogen atom, or a group capable of being split-off upon a coupling reaction; wherein, when RA is -L-R1, L is a divalent linking group, and R1 is a substituent; and -L-R1 does not represent an alkyl, alkenyl, alkynyl, or aryl group, and -L-R1 does not represent a heterocyclic group that bonds, with a carbon atom therein, to the nitrogen atom of the nitrogen-containing 6-membered ring formed by Q and the —N—C═N— moiety.

    Abstract translation: 式(I)的染料成色剂,含有偶合剂的卤化银摄影感光材料和衍生自成色剂的偶氮甲碱染料化合物:其中Q是与-NCN-部分一起形成的残基, 含氮6元环; R A A是具有至少7个碳原子的某一个烷基,或者是-L-R 1; X是芳基; Y是氢原子,或在偶合反应时能够分离的基团; 其中当R A A为-L-R 1时,L为二价连接基团,R 1为取代基; 并且-LR 1不表示烷基,烯基,炔基或芳基,并且-LR 1不表示与其中的碳原子键合的杂环基团 到由Q和-NCN-部分形成的含氮6元环的氮原子。

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