摘要:
A ceramics composite material containing crystallized glass as the matrix and fibers or whiskers of ceramics as a reinforcement material, is obtained by melting original glass to form crystallized glass, compounding the same with fibers or whiskers of oxide ceramics and thereafter crystallizing the original glass. This ceramics composite material does not form any voids and can easily contain at least 50 volume percent of the reinforcement material, whereby a good mechanical strength and fracture toughness are achieved. In the compounding step, the content of the reinforcement can be further increased by forcing out any excess part of the original glass from the reinforcement material by applying pressure to a substance obtained by mixing the original glass with the reinforcement. Further, the ceramics composite material can be efficiently formed into a desired configuration by heating because the original glass flows viscously.
摘要:
A ceramics composite material containing crystallized glass as the matrix and fibers or whiskers of ceramics as a reinforcement material, is obtained by melting original glass to form crystallized glass, compounding the same with fibers or whiskers of oxide ceramics and thereafter crystallizing the original glass. This ceramics composite material does not form any voids and can easily contain at least 50 volume percent of the reinforcement material, whereby a good mechanical strength and fracture toughness are achieved. In the compounding step, the content of the reinforcement can be further increased by forcing out any excess part of the original glass from the reinforcement material by applying pressure to a substance obtained by mixing the original glass with the reinforcement. Further, the ceramics composite material can be efficiently formed into a desired configuration by heating because the original glass flows viscously.
摘要:
For semiconductor manufacturing equipment, a ceramic susceptor that without occurrence of cracking in the course of heating wafers suppresses thermal radiation from the circumferential surface of a wafer placed on the ceramic susceptor, to heighten isothermal quality in the wafer face. A semiconductor-manufacturing-equipment ceramic susceptor (1) including a resistive heating element (3) in the face or interior of ceramic substrates (2a, 2b) has a wafer pocket (5) consisting of a recess that can accommodatingly carry a wafer. The angle that the perimetric inside surface and the bottom face of the wafer pocket (5) form is over 90° and 170° or less, and/or the curvature of the bottom-portion circumferential rim where the perimetric inside surface and the bottom face of the pocket join is 0.1 mm or more. A plasma electrode furthermore may be disposed in the face or interior of the ceramic substrates (2a, 2b) of the ceramic susceptor (1).
摘要:
In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.
摘要:
A semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The semiconductor heating apparatus includes a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.
摘要:
A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).
摘要:
A wafer holder with which probing can be performed with little or virtually no noise due to the wafer being shielded from electromagnetic waves; and a wafer prober on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, and a resistance heat generator for heating the chuck top. At least part of the resistance heat generator is covered by an insulating layer, and an electrically conductive layer is present on an opposite side of the resistance heat generator having the insulating layer. The electrically conductive layer blocks electromagnetic waves that adversely affect inspection. The insulating layer preferably covers the entire surface of the resistance heat generator, and the electrically conductive layer preferably covers the entire surface of the resistance heat generator comprising the insulating layer.
摘要:
A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned therebetween for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest proportional content among the aforementioned three types of components in the joining layer (8).
摘要:
The present invention provides a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith. A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top. A cavity is formed between the chuck top and the support member, and a vacuum space member is provided to the lowest part of a member that is attached to a surface of the chuck top on the side opposite the wafer mounting surface.
摘要:
The present invention provides a heating device which is rigid with little likelihood of warping. The workpiece mounting surface has a high thermal conductivity, and there is improved heat uniformity, and rapid cooling is possible. The heating device of the present invention comprises: a mounting part for mounting the workpiece; a heating part which has a resistance heating element and which heats the mounting part; and a support part which supports the mounting part and heating part. The Young's modulus for each of the mounting part and support part is 100 GPa or greater. By having a Young's modulus of 100 GPa or greater, even if the mounting part is thin, there is little deformation when pressed by a probe card.