摘要:
Disclosed is a method of manufacturing a thin film of an oxide superconductor represented by formula Sr.sub.1-x Nd.sub.x CuO.sub.2 on a substrate. The oxide superconductor has a tetragonal crystal structure, the lattice constant in a-axis falling within a range of between 0.385 nm and 0.410 nm, and the lattice constant in c-axis being an integer number of times as much as a level falling within a range of between 0.310 nm and 0.350 nm. The method includes the steps of forming by epitaxial growth a film of a crystal having lattice constants close to those of the crystal of said oxide superconductor on a substrate, and forming a thin film of the oxide superconductor of a tetragonal crystal structure represented by general formula (I) by a thin film-forming technique.
摘要:
A pellicle is used for a photolithographic patterning process using a light having a wavelength of from 100 to 200 nm. The pellicle contains a pellicle membrane containing (A) a substantially linear fluoropolymer which has an alicyclic structure in its main chain, the main chain being a chain of carbon atoms, and the fluropolymer satisfying the following requirements (1) the carbon atoms in the main chain of the fluoropolymer contain a carbon atom having at least one hydrogen atom bonded thereto and a carbon atom having no hydrogen atom bonded thereto; and (2) in the measurement of a high resolution proton magnetic resonance spectrum of the fluoropolymer, a number of hydrogen atoms based on signals appearing on the higher magnetic field side higher than 2.8 ppm, is at most 6 mol % based on a total number of hydrogen atoms.
摘要:
A method for forming an activated trace on both of a first and second contact point surface or either a first or second contact point surface by applying vibration while applying an electric current, wherein a first contact point electrically is connected to a first external terminal and a second contact point electrically connected to a second external terminal being aligned opposed to said a first contact point in pair. And an electrical components such as a thermal protector, a cellular phone and a notebook personal computer in the like which adopted the process.
摘要:
A health drink is disclosed which is composed of (A) 3-15% by mass of soymilk calculated as a solid content, (B) 0.2-8% by mass of egg white calculated as a solid content, (C) 0.1-5% by mass of a sweetener calculated as a solid content, and (D) the balance of water (providing that A+B+C+D total 100% by mass).
摘要翻译:公开了一种健康饮料,其由(A)以固体成分计算的3〜15质量%的豆浆,(B)以固体成分计算的蛋白0.2-8质量%,(C)为0.1〜5 (D)平衡水(提供A + B + C + D总计100质量%)。
摘要:
The image pick-up device picks up an image of the inspection target optical member whenever it rotates a predetermined angle. The image data which is output by the image pick-up device picking-up the image undergoes coordinate transformation from polar coordinate system to rectangular coordinate system and thereafter binarization process. The area of the defective candidate objects which are extracted from the image data in two color system obtained through the binarization process are normalized in accordance with the reference values prepared for each region in which said defective candidate objects formed within the image data. The points which are calculated as a result of this normalization, are added to the corresponding columns in the classification table. It is judged whether the inspection target optical member is satisfactory or not, in accordance with whether or not evaluation function calculated on the basis of the value in each column exceeds a predetermined reference value.
摘要:
A semiconductor device in which a bipolar transistor and a MOS transistor are formed in a common element region, which can prevent a circuit layout pattern from being large due to a wiring. A semiconductor device having an element region formed by the N−-type layer, which is isolated and insulated from the other regions. A P+-type base region, an N−-type emitter region, an N+-type collector region, and a P+-type excess carrier removing region for removing excess carrier in the P+-type base region, are commonly formed in particular one N−-type layer. Thus, a bipolar transistor is defined. Furthermore, a gate oxide film is formed on the surface of the N−-type layer where between the P+-type base region and the P+-type excess carrier removing region. A polysilicon layer is formed on the gate oxide film. Thus, a P+-type MOS transistor is defined by using the P+-type base region as a source and the P+-type excess carrier removing region a drain. The P+-type base region, the P+-type excess carrier removing region, the N−-type emitter region, the N+-type collector region, and the polysilicon layer are respectively connected to metallic electrodes. Since the bipolar transistor and the MOS transistor are commonly formed in an element region, and one of regions is commonly used, it can prevent a circuit layout pattern from being large due to a wiring for connecting the bipolar transistor and the MOS transistor.
摘要:
An optical lens press-molded so that within at least the optically effective diameter thereof, the thickness thereof may become greater from the center of the optical axis thereof toward the marginal portion of the lens, characterized in that at least one of the both lens surfaces thereof is a spherical or aspherical concave lens continuous from a transferred surface formed so that in the area outside the optically effective diameter thereof, the thickness of the lens may be limited away from the extension of a curved surface of a radius of curvature setting the optically effective diameter toward the outer diameter of the lens, and forming the transferred surface up to at least the required outer diameter of the lens, and a free surface portion is left outside the outer diameter of the lens during molding.
摘要:
There is disclosed an apparatus for producing optical elements, provided with a conveyor for transporting carriers for materials of optical elements into an evacuatable process chamber, and with a heating system for the material supported by the carrier, a forming system for the material supported by the carrier while the material is heated by the heating system, and a system for depositing a thin film to the material formed by the forming system and supported by the carrier.
摘要:
A transmission device includes a transmission line composed of first and second transmission lines. A first circuit block outputs a non-inverted transmission signal to the first transmission line, and a second output circuit outputs an inverted transmission signal to the second transmission line. The second circuit block comprises an impedance element and a comparison circuit for comparing voltages. The same types of impedance elements as the impedance element are interposed in the first and second transmission lines between the first circuit block and the second circuit block.
摘要:
A semiconductor integrated circuit is composed of a first integrated circuit portion for performing external communication by using a differential voltage difference between a pair of communication lines and a second integrated circuit portion that is supplied with power, and a coupling capacitor inserted in a communication line for connecting the first integrated circuit portion and the second integrated circuit portion. Each of the first integrated circuit portion and the second integrated circuit portion has an insulating separation type structure and are formed on a same semiconductor chip. A transmission device includes a transmission line composed of first and second transmission lines. A first circuit block outputs a non-inverted transmission signal to the first transmission line, and a second output circuit outputs an inverted transmission signal to the second transmission line. The second circuit block comprises an impedance element and a comparison circuit for comparing voltages. The same types of impedance elements as the impedance element are interposed in the first and second transmission lines between the first circuit block and the second circuit block.