公开(公告)号：US06337501B1

公开(公告)日：2002-01-08

申请号：US09538490

申请日：2000-03-30

申请人： Yutaka Fukuda ,  Atsuo Onozaki ,  Junichi Nagata ,  Kiyoshi Yamamoto

发明人： Yutaka Fukuda ,  Atsuo Onozaki ,  Junichi Nagata ,  Kiyoshi Yamamoto

IPC分类号： H01L2701

CPC分类号： H01L27/1203 ,  H01L27/0722

摘要： A semiconductor device in which a bipolar transistor and a MOS transistor are formed in a common element region, which can prevent a circuit layout pattern from being large due to a wiring. A semiconductor device having an element region formed by the N−-type layer, which is isolated and insulated from the other regions. A P+-type base region, an N−-type emitter region, an N+-type collector region, and a P+-type excess carrier removing region for removing excess carrier in the P+-type base region, are commonly formed in particular one N−-type layer. Thus, a bipolar transistor is defined. Furthermore, a gate oxide film is formed on the surface of the N−-type layer where between the P+-type base region and the P+-type excess carrier removing region. A polysilicon layer is formed on the gate oxide film. Thus, a P+-type MOS transistor is defined by using the P+-type base region as a source and the P+-type excess carrier removing region a drain. The P+-type base region, the P+-type excess carrier removing region, the N−-type emitter region, the N+-type collector region, and the polysilicon layer are respectively connected to metallic electrodes. Since the bipolar transistor and the MOS transistor are commonly formed in an element region, and one of regions is commonly used, it can prevent a circuit layout pattern from being large due to a wiring for connecting the bipolar transistor and the MOS transistor.

摘要翻译： 在公共元件区域中形成双极晶体管和MOS晶体管的半导体器件，其可以防止由布线引起的电路布局图案大。 一种具有由N型层形成的元件区域的半导体器件，其与其它区域隔离并绝缘。 通常在P +型基区中除去P +型基区中的过量载体的P +型碱基区，N型发射极区，N +型集电极区和P +型过剩载流子除去区， - 类型层。 因此，定义了双极晶体管。 此外，在P +型基极区域和P +型过载载流子除去区域之间的N型层的表面上形成栅极氧化膜。 在栅极氧化膜上形成多晶硅层。 因此，通过使用P +型基极区域作为源极和P +型过剩载流子去除区域是漏极来限定P +型MOS晶体管。 P +型基极区，P +型过剩载流子除去区，N型发射极区，N +型集电极区，多晶硅层分别与金属电极连接。 由于双极晶体管和MOS晶体管通常形成在元件区域中，并且通常使用一个区域，所以由于用于连接双极晶体管和MOS晶体管的布线，可以防止电路布局图案变大。

公开(公告)号：US06465996B2

公开(公告)日：2002-10-15

申请号：US09799106

申请日：2001-03-06

申请人： Junichi Nagata ,  Kiyoshi Yamamoto ,  Hirokazu Itakura ,  Masahiro Kitagawa ,  Hiroyuki Ban ,  Hiroyuki Kawabata ,  Shinichi Maeda

发明人： Junichi Nagata ,  Kiyoshi Yamamoto ,  Hirokazu Itakura ,  Masahiro Kitagawa ,  Hiroyuki Ban ,  Hiroyuki Kawabata ,  Shinichi Maeda

IPC分类号： G05F316

CPC分类号： H02J7/0063

摘要： A constant voltage circuit robust to the input voltage lowering is disclosed. The invention is applied to a constant voltage circuit fed with an input voltage through first and second power conductors for transferring the input voltage to a load as an output voltage through an output transistor. An inventive constant voltage circuit is provided with a substitute circuit, responsive to a detection of the lowing of the input voltage to a predetermined voltage, for providing a substitute output path that is connected in parallel with the output transistor. Doing this minimize the degree of lowering of the second voltage due to the lowering of said first voltage. The output transistor may be nay of NPN and PNP transistors and P-type and N-type MOS FETs.

摘要翻译： 公开了对输入电压降低稳健的恒定电压电路。 本发明应用于通过第一和第二电力导体馈送输入电压的恒压电路，用于通过输出晶体管将输入电压传送到负载作为输出电压。 本发明的恒压电路具有替代电路，响应于将输入电压降低到预定电压，以提供与输出晶体管并联连接的替代输出路径。 这样做使得由于所述第一电压的降低而使第二电压降低的程度最小化。 输出晶体管可以是NPN和PNP晶体管以及P型和N型MOS FET。

公开(公告)号：US20130179928A1

公开(公告)日：2013-07-11

申请号：US13531277

申请日：2012-06-22

申请人： Junichi Nagata ,  Sota Mizuno ,  Tatsuro Saitou

发明人： Junichi Nagata ,  Sota Mizuno ,  Tatsuro Saitou

IPC分类号： H04N7/18

CPC分类号： H04N21/4222 ,  H04N21/4126 ,  H04N21/43615

摘要： According to one embodiment, a mobile terminal and a television receiver, and a communication system which includes the mobile terminal and the television receiver are provided. In the communication system, the mobile terminal and the television receiver are configured to be interactively communicable with each other. The mobile terminal which uses a first address on a network, converts the first address into a second address suitable for the performance of the television receiver and usable by the television receiver. The television receiver automatically activates an application for displaying the data acquired using the second address.

摘要翻译： 根据一个实施例，提供了移动终端和电视接收机以及包括移动终端和电视接收机的通信系统。 在通信系统中，移动终端和电视接收机被配置为可以彼此交互地通信。 使用网络上的第一地址的移动终端将第一地址转换成适合于电视接收机的性能并由电视接收机使用的第二地址。 电视接收机自动激活用于显示使用第二地址获取的数据的应用程序。

公开(公告)号：US08288011B2

公开(公告)日：2012-10-16

申请号：US12805921

申请日：2010-08-24

申请人： Junichi Nagata ,  Yoshiyuki Asakawa

发明人： Junichi Nagata ,  Yoshiyuki Asakawa

IPC分类号： B32B15/04 ,  B32B15/08 ,  B32B15/20 ,  C23C14/20 ,  B05D5/00 ,  B05D7/00

CPC分类号： C23C18/206 ,  C23C14/20 ,  C23C18/165 ,  C23C18/38 ,  C23C18/50 ,  C23C24/00 ,  H05K1/0393 ,  H05K3/388 ,  Y10T428/12535 ,  Y10T428/12569 ,  Y10T428/12826 ,  Y10T428/1291 ,  Y10T428/12944 ,  Y10T428/24967 ,  Y10T428/265 ,  Y10T428/31681

摘要： Adhesiveless copper clad laminates wherein a base metal layer is directly formed on at least one side of an insulating film without using an adhesive and a copper conductor layer having a desired thickness is formed on the base metal layer, the adhesiveless copper clad laminates is characterized in that a base metal layer having a thickness of 3 to 50 nm is formed on an insulating film by a dry plating method and a copper film layer is formed on the base metal layer, and the base metal layer mainly contains (1) a vanadium-molybdenum-nickel alloy consisting of 4 to 13% by weight of vanadium, 5 to 40% by weight of molybdenum, and the balance of nickel or (2) a vanadium-chromium-molybdenum-nickel alloy consisting of 4 to 13% by weight of vanadium and chromium in total including at least 2% by weight of vanadium, 5 to 40% by weight of molybdenum, and the balance of nickel.

摘要翻译： 无粘性铜包覆层压板，其中在不使用粘合剂的情况下在绝缘膜的至少一侧直接形成贱金属层，并在基底金属层上形成具有所需厚度的铜导体层， 通过干式电镀法在绝缘膜上形成厚度为3〜50nm的贱金属层，在基体金属层上形成铜膜层，贱金属层主要含有（1）钒 - 由4〜13重量％的钒，5〜40重量％的钼，余量的镍或（2）4〜13重量％的钒 - 铬 - 钼 - 镍合金组成的钼 - 镍合金 的钒和铬总计包括至少2重量％的钒，5至40重量％的钼，余量为镍。

公开(公告)号：US20080102305A1

公开(公告)日：2008-05-01

申请号：US11661307

申请日：2005-08-24

申请人： Junichi Nagata ,  Yoshiyuki Asakawa

发明人： Junichi Nagata ,  Yoshiyuki Asakawa

IPC分类号： H05K1/09 ,  C23C14/14 ,  C23C18/16 ,  H05K3/38 ,  C23C28/00

CPC分类号： C23C28/00 ,  C23C14/205 ,  C23C18/165 ,  C23C18/38 ,  C23C28/021 ,  C23C28/023 ,  H05K1/0393 ,  H05K3/388 ,  H05K2201/0317 ,  Y10T428/12535 ,  Y10T428/12569

摘要： The present invention provides adhesiveless copper clad laminates wherein there is formed a copper film layer having high adhesiveness and insulation reliability, and a method for manufacturing such adhesiveless copper clad laminates.In adhesiveless copper clad laminates wherein a base metal layer is directly formed on at least one side of an insulating film without using an adhesive and a copper conductor layer having a desired thickness is formed on the base metal layer, the adhesiveless copper clad laminates is characterized in that a base metal layer having a thickness of 3 to 50 nm is formed on an insulating film by a dry plating method and a copper film layer is formed on the base metal layer, and the base metal layer mainly contains (1) a vanadium-molybdenum-nickel alloy consisting of 4 to 13% by weight of vanadium, 5 to 40% by weight of molybdenum, and the balance of nickel or (2) a -vanadium-chromium-molybdenum-nickel alloy consisting of 4 to 13% by weight of vanadium and chromium in total including at least 2% by weight of vanadium, 5 to 40% by weight of molybdenum, and the balance of nickel.

摘要翻译： 本发明提供了无粘性铜包覆层压板，其中形成了具有高粘合性和绝缘可靠性的铜膜层，以及这种无粘合剂覆铜层压板的制造方法。 在无粘性铜包覆层压板中，其中在绝缘膜的至少一侧上直接形成基底金属层而不使用粘合剂，并且在基底金属层上形成具有所需厚度的铜导体层，所述无粘合剂覆铜层压板的特征在于 由于通过干式电镀法在绝缘膜上形成厚度为3〜50nm的贱金属层，在基底金属层上形成铜膜层，贱金属层主要含有（1）钒 钼 - 镍合金，由4〜13重量％的钒，5〜40重量％的钼，余量的镍或（2）a-钒 - 铬 - 钼 - 镍合金组成，由4〜13重量％ 的钒和铬总计包括至少2重量％的钒，5至40重量％的钼，余量为镍。

公开(公告)号：US20050140350A1

公开(公告)日：2005-06-30

申请号：US10974769

申请日：2004-10-28

申请人： Masahiro Kitagawa ,  Akio Kojima ,  Junichi Nagata

发明人： Masahiro Kitagawa ,  Akio Kojima ,  Junichi Nagata

IPC分类号： G05F1/56 ,  G05F1/573 ,  G05F3/04 ,  G05F3/22 ,  G05F3/24

CPC分类号： G05F3/242 ,  G05F1/573

摘要： A constant voltage supplying circuit including an output transistor is connected to a power source line and an output terminal. A base-emitter voltage of the output transistor is detected by a voltage detecting circuit composed of a transistor. A current-outputting circuit for supplying a current determined based on the voltage detected by the voltage detector to a reference voltage supplying circuit is used in the constant voltage supplying circuit. The reference voltage is supplied to a base of the output transistor to cancel a base-emitter voltage of the output transistor and to equalize the output voltage to a voltage generated in a reference voltage generating element included in the reference voltage supplying circuit. In this manner, the output voltage is kept constant notwithstanding variation of output current.

摘要翻译： 包括输出晶体管的恒压供电电路连接到电源线和输出端。 输出晶体管的基极 - 发射极电压由由晶体管构成的电压检测电路来检测。 在恒压供给电路中使用用于将基于由电压检测器检测出的电压确定的电流提供给基准电压供给电路的电流输出电路。 参考电压被提供给输出晶体管的基极以消除输出晶体管的基极 - 发射极电压，并将输出电压与在参考电压供应电路中包括的参考电压产生元件中产生的电压相等。 以这种方式，尽管输出电流的变化，输出电压保持恒定。

公开(公告)号：US5918982A

公开(公告)日：1999-07-06

申请号：US927182

申请日：1997-09-11

申请人： Junichi Nagata ,  Junji Hayakawa ,  Hiroyuki Ban

发明人： Junichi Nagata ,  Junji Hayakawa ,  Hiroyuki Ban

IPC分类号： G01K7/01 ,  G01R19/165 ,  G05F3/02 ,  H02H5/04 ,  H02H7/20 ,  G01K7/00

CPC分类号： G01K7/01

摘要： A temperature detecting circuit detects the rise of ambient temperature, using a forward voltage drop across a diode. The temperature detecting circuit comprises a temperature detecting diode whose cathode is grounded, a first constant current supply device connected with the anode of the temperature detecting diode, for supplying a constant current Ia to the temperature-detecting diode, a rectifying diode whose cathode is connected with the anode of the temperature detecting diode, a second constant current supply device connected with the anode of the rectifying diode, for supplying a constant current Ib to the temperature-detecting diode, a comparator, and a transistor. When the voltage at the anode of the temperature-detecting diode is lower than a reference voltage, the comparator produces a high-level signal indicative of overheating. In response to this, the transistor shorts the anode of the rectifying diode to ground potential to supply the constant current Ib from the second constant current supply device directly to ground potential.

摘要翻译： 温度检测电路使用二极管两端的正向压降来检测环境温度的上升。 温度检测电路包括阴极接地的温度检测二极管，与温度检测二极管的阳极连接的第一恒流源装置，用于向温度检测二极管提供恒定电流Ia;其阴极连接的整流二极管 与温度检测二极管的阳极连接的第二恒流源装置与整流二极管的阳极连接，用于向温度检测二极管提供恒定电流Ib，比较器和晶体管。 当温度检测二极管的阳极电压低于参考电压时，比较器产生指示过热的高电平信号。 响应于此，晶体管将整流二极管的阳极短路到地电位，以将恒定电流Ib从第二恒定电流供应装置直接提供给地电位。

公开(公告)号：US20130176502A1

公开(公告)日：2013-07-11

申请号：US13679048

申请日：2012-11-16

申请人： Junichi Nagata ,  Sota Mizuno ,  Tatsuro Saitou

发明人： Junichi Nagata ,  Sota Mizuno ,  Tatsuro Saitou

IPC分类号： H04N5/44

CPC分类号： H04N5/44 ,  G06F17/30861 ,  H04N21/4126 ,  H04N21/42207 ,  H04N21/42208 ,  H04N21/4222 ,  H04N21/42224 ,  H04N21/43615 ,  H04N21/4782 ,  H04N21/6125

摘要： According to one embodiment, a communication system includes a transmitter and a switch. The transmitter transmits, to a television receiver, an address used to access a server on a network used by a mobile terminal. The switch automatically switches, after the address is transmitted, the display of the mobile terminal to an operation display that displays an operation element suitable for the operation state of the television receiver.

摘要翻译： 根据一个实施例，通信系统包括发射机和交换机。 发射机向电视接收机发送用于访问由移动终端使用的网络上的服务器的地址。 开关在地址被发送之后，自动地将移动终端的显示切换到显示适合于电视接收机的操作状态的操作元件的操作显示器。

公开(公告)号：US07288925B2

公开(公告)日：2007-10-30

申请号：US11242051

申请日：2005-10-04

申请人： Junichi Nagata

发明人： Junichi Nagata

IPC分类号： G05F3/16

CPC分类号： G05F3/30

摘要： In a band gap reference voltage circuit, a band gap cell circuit composed of two transistors is driven with different current densities under a bias condition in which first and second reference voltages output in accordance with the operating states of the two transistors are equal to each other, thereby outputting a band gap reference voltage from a reference voltage output line. A differential amplifying circuit that is supplied with the first and second reference voltages as differential input signals subjects the differential input signals thus supplied to differential amplification. A level shift circuit is connected between a power supply line and the reference voltage output line and supplied with an output voltage of the differential amplifying circuit to carry out a level shift operation on the output voltage concerned.

摘要翻译： 在带隙基准电压电路中，在偏置条件下以不同的电流密度驱动由两个晶体管组成的带隙单元电路，其中根据两个晶体管的工作状态输出的第一和第二基准电压彼此相等 从而从参考电压输出线输出带隙基准电压。 被提供有作为差分输入信号的第一参考电压和第二参考电压的差分放大电路使差分输入信号经受差分放大。 电平移位电路连接在电源线和参考电压输出线之间，并提供有差分放大电路的输出电压，对所输出的电压执行电平移位运算。

公开(公告)号：US20070171590A1

公开(公告)日：2007-07-26

申请号：US11654541

申请日：2007-01-18

申请人： Junichi Nagata ,  Masayuki Kominami

发明人： Junichi Nagata ,  Masayuki Kominami

IPC分类号： H02H3/08

CPC分类号： H02H3/087 ,  H03K17/0822 ,  H03K17/18 ,  H03K2217/0027

摘要： An overcurrent detection circuit for detecting an overcurrent condition in an output transistor connected in series with an electrical load includes a pair of transistors having input terminals connected together. The pair of transistors is interposed between a current mirror circuit and a resistor and between the current mirror circuit and a detection transistor capable of being turned on at the same time as the output transistor. When a voltage is applied to the input terminals of the pair of the transistors, output terminals of the current mirror circuit are fixed at the same potential. Thus, even when an early effect occurs in the current mirror circuit, an electric current flowing through the resistor becomes equal to that flowing through the detection transistor. The overcurrent detection circuit can accurately detect the overcurrent condition based on a voltage drop across the resistor.

摘要翻译： 用于检测与电负载串联连接的输出晶体管中的过电流状况的过电流检测电路包括一对具有连接在一起的输入端的晶体管。 一对晶体管介于电流镜电路和电阻之间，并且在电流镜电路和能够与输出晶体管同时导通的检测晶体管之间。 当对一对晶体管的输入端施加电压时，电流镜电路的输出端子固定在相同的电位。 因此，即使在电流镜电路中发生早期效应，流过电阻器的电流也等于流过检测晶体管的电流。 过电流检测电路可以基于电阻器两端的电压降来精确地检测过电流状况。