公开(公告)号：US20130272021A1

公开(公告)日：2013-10-17

申请号：US13825809

申请日：2011-09-27

申请人： Koji Kirino ,  Junya Fujita

发明人： Koji Kirino ,  Junya Fujita

IPC分类号： F21V33/00

CPC分类号： F21V33/008 ,  G07F17/3211 ,  G07F17/3216 ,  H04R1/028

摘要： A decoration device (6) includes at least one light source (12) emitting light having directivity, a diffusion member (11a) having a diffuse reflective surface for diffusely reflecting light from the light source (12), and a light guide member (13) arranged around the diffusion member at a position anterior to the diffuse reflective surface. The light guide member (13) includes at least one incident surface (13a) facing the at least one light source (12) and an end face (13d) facing the diffusion member of the light guide member (13), wherein the light guide member (13) causes light from the light source (12), the light entering the light guide member (13) through the incident surface (13a), to propagate so as to spread within the light guide member (13), so that the light from the light source (12) exits from an area of the end face (13d), the area being larger than the incident surface (13a), toward the diffuse reflective surface (11a).

摘要翻译： 装饰装置（6）包括发射具有方向性的光的至少一个光源（12），具有用于漫反射来自光源（12）的光的漫反射面的漫射部件（11a）和导光部件 ）布置在扩散构件周围的漫反射表面前面的位置处。 导光构件（13）包括面对至少一个光源（12）的至少一个入射表面（13a）和面对导光构件（13）的漫射构件的端面（13d），其中光导 构件（13）使来自光源（12）的光通过入射面（13a）进入导光构件（13）的光传播，从而在导光构件（13）内扩散， 来自光源（12）的光从面（13d）的面积大于入射面（13a）的面朝向漫反射面（11a）出射。

公开(公告)号：US20140179429A1

公开(公告)日：2014-06-26

申请号：US14129155

申请日：2012-03-14

申请人： Ryoji Okazaki ,  Eiji Yasuda ,  Junya Fujita

发明人： Ryoji Okazaki ,  Eiji Yasuda ,  Junya Fujita

IPC分类号： G07F17/32

CPC分类号： G07F17/3209 ,  G06F2203/04809

摘要： A switch unit is provided, comprising: a display part configured to display an image in at least one input area; an input part provided above the display part, the input part comprising a contact, wherein when the input part is pressed toward the at least one input area displayed on the display part, the contact corresponding to the input area is conducted; and an operating button configured to cause conduction of the contact of the input part, the contact corresponding to the input area, by a press-down operation toward the input area of the display part, wherein the operating button is made of a translucent rectangular parallelepiped member, and at least one side wall of the translucent rectangular parallelepiped member is formed into an inclined surface widening outwardly toward bottom of the operating button.

摘要翻译： 提供了一种开关单元，包括：显示部，被配置为在至少一个输入区域中显示图像; 所述输入部分设置在所述显示部分上方，所述输入部分包括触点，其中当所述输入部分朝向所述显示部分上显示的所述至少一个输入区域被按压时，进行与所述输入区域相对应的触点; 以及操作按钮，其被配置为通过向显示部分的输入区域的按下操作来引起输入部分的触点的接触，对应于输入区域的触点，其中操作按钮由半透明的长方体 并且半透明的长方体的至少一个侧壁形成为朝向操作按钮的底部向外加宽的倾斜表面。

公开(公告)号：US20120032247A1

公开(公告)日：2012-02-09

申请号：US13197263

申请日：2011-08-03

申请人： Satoshi NAGASHIMA ,  Junya Fujita ,  Hideyuki Yamawaki ,  Masahiro Kiyotoshi ,  Hisataka Meguro

发明人： Satoshi NAGASHIMA ,  Junya Fujita ,  Hideyuki Yamawaki ,  Masahiro Kiyotoshi ,  Hisataka Meguro

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L27/11526 ,  H01L27/11529 ,  H01L29/42324

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell transistor obtained by sequentially stacking the gate insulation film, the floating gate electrode, the interelectrode insulation film, and the control gate electrode over the channel semiconductor layer. The control gate electrode has a structure obtained by sequentially stacking the semiconductor film, the silicide phase-change suppressing layer, and the silicide film. In addition, the silicide phase-change suppressing layer includes a polycrystalline silicon film in which at least one of C, F, and N is doped in a concentration range of 1×1020 to 5×1021 [atom/cm3].

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括通过在沟道半导体层上依次层叠栅绝缘膜，浮栅电极，电极间绝缘膜和控制栅电极而获得的存储单元晶体管。 控制栅电极具有通过顺序堆叠半导体膜，硅化物相变抑制层和硅化物膜而获得的结构。 此外，硅化物相变抑制层包括在1×1020〜5×1021 [原子/ cm3]的浓度范围内掺杂有C，F和N中的至少一种的多晶硅膜。

公开(公告)号：US08748965B2

公开(公告)日：2014-06-10

申请号：US13197263

申请日：2011-08-03

申请人： Satoshi Nagashima ,  Junya Fujita ,  Hideyuki Yamawaki ,  Masahiro Kiyotoshi ,  Hisataka Meguro

发明人： Satoshi Nagashima ,  Junya Fujita ,  Hideyuki Yamawaki ,  Masahiro Kiyotoshi ,  Hisataka Meguro

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L27/11526 ,  H01L27/11529 ,  H01L29/42324

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell transistor obtained by sequentially stacking the gate insulation film, the floating gate electrode, the interelectrode insulation film, and the control gate electrode over the channel semiconductor layer. The control gate electrode has a structure obtained by sequentially stacking the semiconductor film, the silicide phase-change suppressing layer, and the silicide film. In addition, the silicide phase-change suppressing layer includes a polycrystalline silicon film in which at least one of C, F, and N is doped in a concentration range of 1×1020 to 5×1021 [atom/cm3].

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括通过在沟道半导体层上依次层叠栅绝缘膜，浮栅电极，电极间绝缘膜和控制栅电极而获得的存储单元晶体管。 控制栅电极具有通过顺序堆叠半导体膜，硅化物相变抑制层和硅化物膜而获得的结构。 此外，硅化物相变抑制层包括在1×1020〜5×1021 [原子/ cm3]的浓度范围内掺杂有C，F和N中的至少一种的多晶硅膜。

公开(公告)号：US20120068251A1

公开(公告)日：2012-03-22

申请号：US13004238

申请日：2011-01-11

申请人： Masaaki Higuchi ,  Junya Fujita

发明人： Masaaki Higuchi ,  Junya Fujita

IPC分类号： H01L29/792

CPC分类号： H01L27/11582 ,  H01L29/40114 ,  H01L29/7926

摘要： According to one embodiment, a semiconductor memory device includes a multilayer body, a block layer, a charge storage layer, a tunnel layer, and a semiconductor pillar. The multilayer body includes a plurality of insulating films and electrode films alternately stacked. The multilayer body includes a through hole extending in stacking direction of the insulating films and the electrode films. The block layer is provided on an inner surface of the through hole. The charge storage layer is surrounded by the block layer. The tunnel layer is surrounded by the charge storage layer. The semiconductor pillar is surrounded by the tunnel layer. Dielectric constant of a portion of the tunnel layer on a side of the semiconductor pillar is higher than dielectric constant of a portion of the tunnel layer on a side of the charge storage layer.

摘要翻译： 根据一个实施例，半导体存储器件包括多层体，块层，电荷存储层，隧道层和半导体柱。 多层体包括交替层叠的多个绝缘膜和电极膜。 多层体包括在绝缘膜和电极膜的堆叠方向上延伸的通孔。 阻挡层设置在通孔的内表面上。 电荷存储层被阻挡层包围。 隧道层被电荷存储层包围。 半导体柱被隧道层包围。 半导体柱一侧的隧道层的一部分的介电常数高于电荷存储层一侧的隧道层的一部分的介电常数。

公开(公告)号：US07765890B2

公开(公告)日：2010-08-03

申请号：US12139729

申请日：2008-06-16

申请人： Toshihiko Inoue ,  Kazutaka Nakayama ,  Takatoshi Iwayama ,  Junya Fujita

发明人： Toshihiko Inoue ,  Kazutaka Nakayama ,  Takatoshi Iwayama ,  Junya Fujita

IPC分类号： B25J17/00

CPC分类号： B25J19/0029 ,  Y10T74/20305 ,  Y10T74/20311 ,  Y10T74/20335

摘要： An industrial robot has an arm, a wrist element rotatably interconnected to the arm, a work tool mounted on a distal end of the wrist element, and a motor mounted on the wrist element. An umbilical-member connected to the work tool and a flat cable connected to the motor are disposed to run along the wrist element from the arm side to the work tool or to the motor. A pipe member extending in a direction of a rotation axis of the wrist element is provided inside the arm and the umbilical-member connected to the work tool is passed inside the pipe member. The flat cable connected to the motor is wound around outside of the pipe member, with the flat cable arranged to become slack in a rotating direction of the wrist element.

摘要翻译： 工业机器人具有臂，可旋转地互连到臂的腕部元件，安装在腕部元件的远端上的作业工具和安装在腕部元件上的马达。 连接到工作工具的脐部构件和连接到电动机的扁平电缆被设置为沿着手腕一侧到达工作工具或电动机的方向行进。 在臂部的内部设置有沿着腕部的旋转轴的方向延伸的管构件，并且连接到作业工具的脐部构件穿过管构件。 连接到电动机的扁平电缆缠绕在管构件的外部，扁平电缆被布置成在腕部元件的旋转方向上变得松弛。

公开(公告)号：US20080315820A1

公开(公告)日：2008-12-25

申请号：US12139729

申请日：2008-06-16

申请人： Toshihiko Inoue ,  Kazutaka Nakayama ,  Takatoshi Iwayama ,  Junya Fujita

发明人： Toshihiko Inoue ,  Kazutaka Nakayama ,  Takatoshi Iwayama ,  Junya Fujita

IPC分类号： B25J9/00

CPC分类号： B25J19/0029 ,  Y10T74/20305 ,  Y10T74/20311 ,  Y10T74/20335

摘要： An industrial robot having: an arm, a wrist element rotatably interconnected to the arm, a work tool mounted on a distal end of the wrist element, and a motor mounted on the wrist element; wherein an umbilical-member connected to the work tool and a flat cable connected to the motor are disposed to run along the wrist element from the arm side to aid work tool or to the motor, characterized in that a pipe member extending in a direction of a rotation axis of the wrist element is provided inside the arm, the umbilical-member connected to the work tool being passed inside the pipe member, the flat cable connected to the motor being wound around outside of the pipe member, with the flat cable slacked in a rotating direction of the wrist element.

摘要翻译： 一种工业机器人，其具有：手臂，与所述臂可旋转地相互连接的腕部元件，安装在所述腕部元件的前端的作业工具，以及安装在所述腕部元件上的马达; 其特征在于，连接到所述作业工具的脐部构件和连接到所述电动机的扁平电缆被布置成沿着所述腕部元件从所述臂侧延伸以辅助工作工具或所述电动机，其特征在于， 腕部的旋转轴设置在臂的内部，连接到作业工具的脐部件通过管构件内部，连接到电动机的扁平电缆被卷绕在管构件的外部，扁平电缆松弛 在腕部元件的旋转方向上。

公开(公告)号：US06261560B1

公开(公告)日：2001-07-17

申请号：US08875927

申请日：1997-08-13

申请人： Toshimasa Tsujinaka ,  Chikara Ebisui ,  Junya Fujita

发明人： Toshimasa Tsujinaka ,  Chikara Ebisui ,  Junya Fujita

IPC分类号： A61K39395

CPC分类号： C07K16/2866 ,  A61K38/00 ,  A61K2039/505 ,  C07K2317/24 ,  C07K2319/00 ,  Y10S514/907 ,  Y10S514/921

摘要： The present invention provides a muscle protein proteolysis inhibiting agent comprising antibody to Interleukin-6 receptor (IL-6R antibody). Antibodies of animals other than humans such as mice and rats, chimeric antibodies of these antibodies with human antibodies, and reshaped human antibodies and so forth can be used for the IL-6R antibody. The muscle protein proteolysis inhibiting agent of the present invention is useful in the inhibition of muscle protein proteolysis observed in diseases such as cancerous cachexia, sepsis, serious trauma or muscular dystrophy.

摘要翻译： 本发明提供了包含白细胞介素-6受体（IL-6R抗体）抗体的肌肉蛋白蛋白水解抑制剂。 IL-6R抗体可以用于人类以外的动物，例如小鼠和大鼠，这些抗体与人抗体的嵌合抗体和重构的人抗体等。 本发明的肌肉蛋白质蛋白水解抑制剂可用于抑制在诸如癌性恶病质，败血症，严重创伤或肌营养不良症等疾病中观察到的肌肉蛋白质蛋白水解。

公开(公告)号：US09542795B2

公开(公告)日：2017-01-10

申请号：US14129155

申请日：2012-03-14

申请人： Ryoji Okazaki ,  Eiji Yasuda ,  Junya Fujita

发明人： Ryoji Okazaki ,  Eiji Yasuda ,  Junya Fujita

IPC分类号： A63F9/24 ,  A63F13/00 ,  G06F3/033 ,  G06F3/041 ,  G07F17/32

CPC分类号： G07F17/3209 ,  G06F2203/04809

摘要： A switch unit is provided, comprising: a display part configured to display an image in at least one input area; an input part provided above the display part, the input part comprising a contact, wherein when the input part is pressed toward the at least one input area displayed on the display part, the contact corresponding to the input area is conducted; and an operating button configured to cause conduction of the contact of the input part, the contact corresponding to the input area, by a press-down operation toward the input area of the display part, wherein the operating button is made of a translucent rectangular parallelepiped member, and at least one side wall of the translucent rectangular parallelepiped member is formed into an inclined surface widening outwardly toward bottom of the operating button.

摘要翻译： 提供了一种开关单元，包括：显示部，被配置为在至少一个输入区域中显示图像; 所述输入部分设置在所述显示部分上方，所述输入部分包括触点，其中当所述输入部分朝向所述显示部分上显示的所述至少一个输入区域被按压时，进行与所述输入区域相对应的触点; 以及操作按钮，其被配置为通过向显示部分的输入区域的按下操作来引起输入部分的触点的接触，对应于输入区域的触点，其中操作按钮由半透明的长方体 并且半透明的长方体的至少一个侧壁形成为朝向操作按钮的底部向外加宽的倾斜表面。

公开(公告)号：US20140048862A1

公开(公告)日：2014-02-20

申请号：US13715324

申请日：2012-12-14

申请人： Junya Fujita ,  Fumiki Aiso ,  Ryu Kato

发明人： Junya Fujita ,  Fumiki Aiso ,  Ryu Kato

IPC分类号： H01L29/788 ,  H01L21/762

CPC分类号： H01L29/788 ,  H01L21/762 ,  H01L21/76224 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

摘要： A semiconductor device according to an embodiment, includes a first dielectric film, a floating gate, a second dielectric film, and a third dielectric film. The first dielectric film is formed above a semiconductor substrate. The floating gate is formed above the first dielectric film by using a silicon film. The third dielectric film is formed to cover an upper surface of the floating gate and a side face portion of the floating gate. The floating gate includes an impurity layer formed on an upper surface of the floating gate and a side face of the floating gate along an interface between the floating gate and the third dielectric film formed to cover the upper surface of the floating gate and a side face portion of the floating gate and containing at least one of carbon (C), nitrogen (N), and fluorine (F) as an impurity.

摘要翻译： 根据实施例的半导体器件包括第一电介质膜，浮栅，第二电介质膜和第三电介质膜。 第一电介质膜形成在半导体衬底的上方。 浮置栅极通过使用硅膜形成在第一电介质膜的上方。 第三绝缘膜形成为覆盖浮栅的上表面和浮栅的侧面部。 浮置栅极包括形成在浮置栅极的上表面上的杂质层和浮置栅极的沿着形成为覆盖浮动栅极的上表面的浮置栅极和第三电介质膜之间的界面的侧面，以及侧面 并且含有作为杂质的碳（C），氮（N）和氟（F）中的至少一种。