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公开(公告)号：US20230223265A1
公开(公告)日：2023-07-13
申请号：US18185647
申请日：2023-03-17
发明人： Koei KURIBAYASHI , Arito OGAWA
CPC分类号： H01L21/28079 , C23C16/14 , C23C16/0272 , C23C16/46
摘要： There is provided a technique that includes: (a) heating a substrate to 445° C. or more and 505° C. or less; (b) supplying a molybdenum-containing gas to the substrate; and (c) supplying a reducing gas to the substrate, wherein a molybdenum-containing film is formed on the substrate by performing (b) and (c) one or more times after performing (a).
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公开(公告)号：US20230091654A1
公开(公告)日：2023-03-23
申请号：US17946217
申请日：2022-09-16
发明人： Koei KURIBAYASHI , Arito OGAWA , Norikazu MIZUNO
IPC分类号： H01L21/02 , C23C16/455 , C23C16/40 , C23C16/44
摘要： There is provided a technique that includes: (a) supplying a metal element-containing gas to a substrate accommodated in a process vessel; (b) supplying a reducing gas to the substrate; (c) performing (a) and (b) a predetermined number of times to form a film containing a metal element on the substrate; (d) supplying a modifying gas to the film to form a layer including an element contained in the modifying gas on a surface of the film after (c); and (e) creating a rare gas atmosphere in the process vessel and in a transfer chamber adjacent to the process vessel and carrying the substrate out of the process vessel and into the transfer chamber after (d).
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公开(公告)号：US20240247367A1
公开(公告)日：2024-07-25
申请号：US18597415
申请日：2024-03-06
发明人： Koei KURIBAYASHI , Arito Ogawa
IPC分类号： C23C16/06 , C23C16/02 , C23C16/455 , H01L21/285
CPC分类号： C23C16/06 , C23C16/0272 , C23C16/45523 , C23C16/45557 , H01L21/28506
摘要： There is provided a technique that includes: (A) forming a first layer containing a Group element on a surface of a substrate by supplying a gas containing the Group 15 element to the substrate; and (B) forming a film containing molybdenum on the first layer by performing: (a) supplying a gas containing molybdenum to the substrate; and (b) supplying a reducing gas to the substrate, wherein (a) and (b) are performed a predetermined number of times in (B) in an atmosphere capable of suppressing a decomposition of the first layer.
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公开(公告)号：US20230268181A1
公开(公告)日：2023-08-24
申请号：US18184390
申请日：2023-03-15
发明人： Arito OGAWA , Koei KURIBAYASHI
IPC分类号： H01L21/285 , C23C16/08 , C23C16/455
CPC分类号： H01L21/28506 , C23C16/08 , C23C16/45527
摘要： According to one aspect of a technique of the present disclosure, there is provided a substrate processing method including: (a) supplying a metal-containing gas to a substrate; (b) supplying a first reducing gas to the substrate; and (c) supplying a second reducing gas different from the first reducing gas to the substrate, wherein a metal-containing film is formed on the substrate by performing (a), (b) and (c) at least once.
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公开(公告)号：US20230230845A1
公开(公告)日：2023-07-20
申请号：US18186264
申请日：2023-03-20
发明人： Koei KURIBAYASHI , Norikazu MIZUNO , Arito OGAWA
IPC分类号： H01L21/3205 , H01L21/324 , C23C16/46
CPC分类号： H01L21/32051 , H01L21/324 , C23C16/46
摘要： There is provided a technique that includes: (a) adjusting a temperature of a substrate to a first temperature; (b) forming a first molybdenum-containing film on the substrate by performing: (b1) supplying a molybdenum-containing gas to the substrate; and (b2) supplying a reducing gas to the substrate for a first time duration; (c) adjusting the temperature of the substrate to a second temperature after performing (b); and (d) forming a second molybdenum-containing film on the first molybdenum-containing film by performing: (d1) supplying the molybdenum-containing gas to the substrate; and (d2) supplying the reducing gas to the substrate for a second time duration.
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公开(公告)号：US20190255576A1
公开(公告)日：2019-08-22
申请号：US16280874
申请日：2019-02-20
发明人： Koei KURIBAYASHI , Kenji KAMEDA , Tsukasa KAMAKURA , Takeo HANASHIMA , Hiroaki HIRAMATSU , Shinya EBATA , Hiroto YAMAGISHI , Sadao HISAKADO , Takafumi SASAKI , Takatomo YAMAGUCHI , Shuhei SAIDO
摘要： There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).
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公开(公告)号：US20240229229A9
公开(公告)日：2024-07-11
申请号：US18481715
申请日：2023-10-05
发明人： Koei KURIBAYASHI , Kento NOMURA , Yukinao KAGA
IPC分类号： C23C16/08 , H01L21/285
CPC分类号： C23C16/08 , H01L21/28568
摘要： According to one embodiment of the present disclosure, there is provided a technique that includes (a) supplying a second-metal-containing gas to a substrate including a first metal film and an insulating film to form a first film containing a second metal on the first metal film; and (b) supplying the second-metal-containing gas to the substrate to form a second film containing the second metal on the first film and the insulating film.
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8.发明公开公开(公告)号：US20230407472A1
公开(公告)日：2023-12-21
申请号：US18359107
申请日：2023-07-26
发明人： Hiroki HATTA , Takeo HANASHIMA , Koei KURIBAYASHI , Shin SONE
IPC分类号： C23C16/455 , C23C16/34 , C23C16/30 , C23C16/40 , H01L21/02
CPC分类号： C23C16/45527 , C23C16/345 , C23C16/308 , C23C16/401 , H01L21/0214 , H01L21/0217 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.
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公开(公告)号：US20220301850A1
公开(公告)日：2022-09-22
申请号：US17679966
申请日：2022-02-24
摘要： There is provided a technique capable of cleaning a film deposited on an outer peripheral portion of a substrate placing surface of a substrate support. According to one aspect thereof, a substrate processing apparatus includes: a process chamber where a product substrate is processed; a substrate support provided in the process chamber and provided with a substrate placing surface whereon the product substrate is placed; a process gas supplier wherethrough a process gas is supplied into the process chamber while the product substrate being placed on the substrate placing surface; and a cleaning gas supplier wherethrough a cleaning gas is supplied into the process chamber while a dummy substrate being placed on the substrate placing surface. An outer peripheral portion of the dummy substrate is out of contact with the substrate placing surface in a state where the dummy substrate is placed on the substrate placing surface.
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公开(公告)号：US20220093392A1
公开(公告)日：2022-03-24
申请号：US17478523
申请日：2021-09-17
发明人： Takuya JODA , Arito OGAWA , Norikazu MIZUNO , Shogo HAYASAKA , Koei KURIBAYASHI
IPC分类号： H01L21/02 , C23C16/458 , C23C16/455
摘要： Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle includes: (a1) supplying a first element-containing gas to the substrate in a process chamber; and (a2) supplying a first reducing gas to the substrate a plurality of times, and wherein (a1) and (a2) are sequentially performed; and (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle includes: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate, and wherein (b1) and (b2) are sequentially performed.
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