公开(公告)号：US5399389A

公开(公告)日：1995-03-21

申请号：US94337

申请日：1993-07-20

申请人： Konrad Hieber ,  Jasper Von Tomkewitsch ,  Oswald Spindler ,  Helmuth Treichel ,  Zvonimir Gabric ,  Alexander Gschwandtner

发明人： Konrad Hieber ,  Jasper Von Tomkewitsch ,  Oswald Spindler ,  Helmuth Treichel ,  Zvonimir Gabric ,  Alexander Gschwandtner

IPC分类号： C30B29/18 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/06 ,  H01L21/02

CPC分类号： H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/31612 ,  H01L21/76819

摘要： In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.

摘要翻译： 在绝缘层的臭氧活化沉积中，可以在不同构造的表面上实现不同的生长速率。 当不同层次的结构硅衬底的表面被不同地构成或分别有意地改变，使得SiO 2绝缘层在较高表面上比在更深的设置表面上更缓慢地生长，并且当沉积被执行直到 快速生长和缓慢生长的层区域的表面形成无梯度的平面水平，实现局部和全局平坦化。