公开(公告)号：US10529774B1

公开(公告)日：2020-01-07

申请号：US16134523

申请日：2018-09-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Gyung-Min Choi ,  Byoung-Chul Min

IPC: H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10

Abstract: The present invention relates to a magnetic RAM including a memory cell, the memory cell including a metal layer, a magnetic tunnel junction layer storing predefined information by causing a magnetization direction to be up or down, a spin-current transfer layer transferring spin current to the magnetic tunnel junction layer, a spin-current generation layer generating the spin current, and a thermal electron injection layer injecting thermal electrons into the spin-current generation layer, and the magnetization direction may be changed due to spin transfer torque generated in the magnetic tunnel junction layer, whereby it is possible to reduce current density consumed for switching the magnetization direction of the free magnetic sub-layer in the magnetic tunnel junction layer.

公开(公告)号：US09263668B2

公开(公告)日：2016-02-16

申请号：US14458617

申请日：2014-08-13

Applicant: Korea Institute of Science and Technology

Inventor： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

IPC: G01R33/09 ,  G11C11/15 ,  H01F10/32 ,  H01F41/22 ,  H01L43/12 ,  H01F10/14 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  H01L43/10 ,  H01F10/12

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/14 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10 ,  Y10T428/115

Abstract: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

Abstract translation: 本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。

公开(公告)号：US20190393264A1

公开(公告)日：2019-12-26

申请号：US16134523

申请日：2018-09-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Gyung-Min Choi ,  Byoung-Chul Min

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: The present invention relates to a magnetic RAM including a memory cell, the memory cell including a metal layer, a magnetic tunnel junction layer storing predefined information by causing a magnetization direction to be up or down, a spin-current transfer layer transferring spin current to the magnetic tunnel junction layer, a spin-current generation layer generating the spin current, and a thermal electron injection layer injecting thermal electrons into the spin-current generation layer, and the magnetization direction may be changed due to spin transfer torque generated in the magnetic tunnel junction layer, whereby it is possible to reduce current density consumed for switching the magnetization direction of the free magnetic sub-layer in the magnetic tunnel junction layer.