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    Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound
    5.
    发明授权
    Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound 失效
    含高分子化合物的高分子化合物，抗蚀剂组合物和溶解抑制剂

    公开(公告)号：US07326512B2

    公开(公告)日：2008-02-05

    申请号：US10501459

    申请日：2003-11-28

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

    IPC分类号： G03F7/039 ,  C08F18/20 ,  C08F214/18 ,  C08F14/18

    CPC分类号： G03F7/0046 ,  C08F20/22 ,  G03F7/0397 ,  Y10S430/108

    摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound.To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

    摘要翻译： 提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。 为了确保耐蚀刻性，将脂环族基团引入侧链部分。 脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。 作为脂环基，优选使用多环基。 通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。 抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

    Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound
    6.
    发明申请
    Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound 失效
    含高分子化合物的高分子化合物，抗蚀剂组合物和溶解抑制剂

    公开(公告)号：US20050130056A1

    公开(公告)日：2005-06-16

    申请号：US10501459

    申请日：2003-11-28

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

    IPC分类号： C08F16/24 ,  C08F20/22 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C1/494

    CPC分类号： G03F7/0046 ,  C08F20/22 ,  G03F7/0397 ,  Y10S430/108

    摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

    摘要翻译： 提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。 为了确保耐蚀刻性，将脂环族基团引入侧链部分。 脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。 作为脂环基，优选使用多环基。 通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。 抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

    Photoresist composition and resist pattern formation method by the use thereof
    7.
    发明授权
    Photoresist composition and resist pattern formation method by the use thereof 失效
    光刻胶组合物和抗蚀剂图案形成方法

    公开(公告)号：US07700257B2

    公开(公告)日：2010-04-20

    申请号：US10547427

    申请日：2004-03-24

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0046 ,  G03F7/0395 ,  Y10S430/108

    摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.

    摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为 可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D） 或更少的碳原子或铵盐（d3）。 该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

    Photoresist composition and method for forming resist pattern using the same
    8.
    发明申请
    Photoresist composition and method for forming resist pattern using the same 失效
    光刻胶组合物及其形成方法

    公开(公告)号：US20060166130A1

    公开(公告)日：2006-07-27

    申请号：US10547427

    申请日：2004-03-24

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0046 ,  G03F7/0395 ,  Y10S430/108

    摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.

    摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为 可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D） 或更少的碳原子或铵盐（d3）。 该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

    Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material, and method for forming resist pattern using such resist-protec- ting film
    9.
    发明申请
    Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material, and method for forming resist pattern using such resist-protec- ting film 审中-公开
    用于形成浸渍曝光工艺的抗蚀保护膜的材料，由这种材料制成的抗蚀保护膜，以及使用这种抗蚀保护膜形成抗蚀剂图案的方法

    公开(公告)号：US20070031755A1

    公开(公告)日：2007-02-08

    申请号：US10568951

    申请日：2004-08-25

    申请人： Taku Hirayama ,  Kotaro Endo ,  Masaaki Yoshida ,  Kazumasa Wakiya

    发明人： Taku Hirayama ,  Kotaro Endo ,  Masaaki Yoshida ,  Kazumasa Wakiya

    IPC分类号： G03C1/00

    CPC分类号： G03F7/2041 ,  G03F7/11

    摘要： The resist protective film forming material for liquid immersion lithography is provided, which is suitable when the non-aqueous solution with a high transparency and high refractive index exemplified by the fluorinated liquid is used. The resist protective film forming material includes at least one component selected from water-soluble and alkali-soluble film forming components. The liquid immersion lithography process improves the resolution of resist patterns by irradiating a light beam on a resist film interposing a given thickness of the non-aqueous solution with a refractive index higher than that of the air at least on the resist film in a path, along where the lithography exposing light beam passes to the resist film.

    摘要翻译： 提供了用于液浸光刻的抗蚀剂保护膜形成材料，当使用以氟化液体为例说明的具有高透明度和高折射率的非水溶液时，这是合适的。 抗蚀剂保护膜形成材料包括选自水溶性和碱溶性成膜组分中的至少一种成分。 液浸式光刻工艺通过至少在路径上的抗蚀剂膜上照射介于非空气的折射率高于非水溶液的给定厚度的抗蚀剂膜上的光束来提高抗蚀剂图案的分辨率， 沿着光刻曝光光束到达抗蚀剂膜的方向。

    IMMERSION LIQUID FOR LIQUID IMMERSION LITHOGRAPHY PROCESS AND METHOD FOR FORMING RESIST PATTERN USING THE SAME
    10.
    发明申请
    IMMERSION LIQUID FOR LIQUID IMMERSION LITHOGRAPHY PROCESS AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 审中-公开
    用于液体渗透光刻方法的浸渍液及其形成耐蚀图案的方法

    公开(公告)号：US20090011375A1

    公开(公告)日：2009-01-08

    申请号：US11597124

    申请日：2005-05-24

    申请人： Taku Hirayama ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

    发明人： Taku Hirayama ,  Kazumasa Wakiya ,  Kotaro Endo ,  Masaaki Yoshida

    IPC分类号： G03F7/20 ,  G03C5/00

    CPC分类号： G03F7/2041

    摘要： A liquid immersion lithography process is provided. In particular, the liquid immersion lithography process is one in which the resolution of a resist pattern is improved by exposure to light through a liquid having a refractive index higher than that of air and a predetermined thickness, while being arranged on at least a resist film in a pathway allowing exposure light for lithography to reach to the resist film. Accordingly, both the resist film and the liquid used are prevented from deterioration in liquid immersion lithography. Thus, the formation of a high-resolution resist pattern can be attained with liquid immersion lithography. Therefore, the liquid comprised of a silicon-based liquid transparent to exposure light used in the lithography process is employed as an immersion liquid for liquid immersion lithography.

    摘要翻译： 提供液浸光刻工艺。 特别地，液浸式光刻法是通过使折射率高于空气和预定厚度的液体暴露于光而提高抗蚀剂图案的分辨率的方法，同时至少设置抗蚀剂膜 在允许用于光刻的曝光光到达抗蚀剂膜的途径中。 因此，可以防止所使用的抗蚀剂膜和液体在液浸光刻中的劣化。 因此，通过液浸光刻技术可以获得高分辨率抗蚀图案的形成。 因此，采用在光刻工艺中使用的曝光用透光性的硅系液体作为液浸式光刻用浸液。