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    Photoresist composition and method for forming resist pattern using the same
    1.
    发明申请
    Photoresist composition and method for forming resist pattern using the same 失效
    光刻胶组合物及其形成方法

    公开(公告)号：US20060166130A1

    公开(公告)日：2006-07-27

    申请号：US10547427

    申请日：2004-03-24

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0046 ,  G03F7/0395 ,  Y10S430/108

    摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.

    摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为 可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D） 或更少的碳原子或铵盐（d3）。 该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

    Photoresist composition and resist pattern formation method by the use thereof
    4.
    发明授权
    Photoresist composition and resist pattern formation method by the use thereof 失效
    光刻胶组合物和抗蚀剂图案形成方法

    公开(公告)号：US07700257B2

    公开(公告)日：2010-04-20

    申请号：US10547427

    申请日：2004-03-24

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0046 ,  G03F7/0395 ,  Y10S430/108

    摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.

    摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为 可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D） 或更少的碳原子或铵盐（d3）。 该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

    Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound
    5.
    发明授权
    Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound 失效
    含高分子化合物的高分子化合物，抗蚀剂组合物和溶解抑制剂

    公开(公告)号：US07326512B2

    公开(公告)日：2008-02-05

    申请号：US10501459

    申请日：2003-11-28

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

    IPC分类号： G03F7/039 ,  C08F18/20 ,  C08F214/18 ,  C08F14/18

    CPC分类号： G03F7/0046 ,  C08F20/22 ,  G03F7/0397 ,  Y10S430/108

    摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound.To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

    摘要翻译： 提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。 为了确保耐蚀刻性，将脂环族基团引入侧链部分。 脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。 作为脂环基，优选使用多环基。 通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。 抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

    Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound
    8.
    发明申请
    Polymer compound, resist composition and dissolution inhibitor agent containing the polymer compound 失效
    含高分子化合物的高分子化合物，抗蚀剂组合物和溶解抑制剂

    公开(公告)号：US20050130056A1

    公开(公告)日：2005-06-16

    申请号：US10501459

    申请日：2003-11-28

    申请人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

    发明人： Toshiyuki Ogata ,  Kotaro Endo ,  Hiromitsu Tsuji ,  Masaaki Yoshida ,  Hideo Hada ,  Ryoichi Takasu ,  Mitsuru Sato

    IPC分类号： C08F16/24 ,  C08F20/22 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C1/494

    CPC分类号： G03F7/0046 ,  C08F20/22 ,  G03F7/0397 ,  Y10S430/108

    摘要： Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 μm−1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

    摘要翻译： 提供了用于下一代微细加工的光致抗蚀剂组合物中使用的高透明性的高分子化合物，使用该高分子化合物作为基础聚合物的抗蚀剂组合物和由该高分子化合物构成的溶解抑制剂。 为了确保耐蚀刻性，将脂环族基团引入侧链部分。 脂环族基团上的氢原子被高度氟化，以确保由等于或小于3.0μm的吸附系数表示的157纳米波长的透明度。 作为脂环基，优选使用多环基。 通过优选用氟原子代替环上的所有氢原子，即形成全氟环脂基，氢原子被高度氟化。 抗蚀剂组合物通过使用高分子化合物作为基础聚合物形成，并且该溶解抑制剂由高分子化合物形成。

    Photoresist composition and method of forming resist pattern
    9.
    发明申请
    Photoresist composition and method of forming resist pattern 审中-公开
    光刻胶组合物和形成抗蚀剂图案的方法

    公开(公告)号：US20070148581A1

    公开(公告)日：2007-06-28

    申请号：US10581777

    申请日：2004-11-29

    申请人： Hiromitsu Tsuji ,  Kotaro Endo

    发明人： Hiromitsu Tsuji ,  Kotaro Endo

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397

    摘要： A photoresist composition is provided, that includes (A) a polymer component including an alkaline-soluble constitutional unit that contains an aliphatic cyclic group having both (i) a fluorine atom or a fluorinated alkyl group and (ii) an alcoholic hydroxide group; in which the alkaline solubility of the polymer component may be changed by action of an acid; and (B) an acid generating component, capable of generating an acid by way of exposure, that contains at least a sulfonium compound expressed by the general formula (1) below; in the formula (1), X represents a C2 to C6 alkylene group of which at least a hydrogen atom is substituted by a fluorine atom; R1 to R3 represent independently of each other an aryl or alkyl group, and at least one of R1 to R3 represents an aryl group.

    摘要翻译： 提供一种光致抗蚀剂组合物，其包括（A）包含含有（i）氟原子或氟化烷基和（ii）醇氢氧化物基团的脂族环状基团的碱溶性结构单元的聚合物组分; 其中聚合物组分的碱溶性可以通过酸的作用而改变; 和（B）能够通过曝光产生酸的含酸组分，其含有至少一种由下述通式（1）表示的锍化合物; 在式（1）中，X表示至少具有氢原子被氟原子取代的C2〜C6亚烷基; R 1至R 3彼此独立地表示芳基或烷基，R 1至R 3中的至少一个 表示芳基。

    Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern
    10.
    发明申请
    Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern 审中-公开
    浸渍曝光的正抗蚀组合物和形成抗蚀剂图案的方法

    公开(公告)号：US20080193871A1

    公开(公告)日：2008-08-14

    申请号：US11577003

    申请日：2005-09-30

    申请人： Toshiyuki Ogata ,  Hiromitsu Tsuji ,  Syogo Matsumaru ,  Hideo Hada

    发明人： Toshiyuki Ogata ,  Hiromitsu Tsuji ,  Syogo Matsumaru ,  Hideo Hada

    IPC分类号： G03F7/004 ,  G03F7/26

    CPC分类号： G03F7/0397

    摘要： A positive resist composition for immersion exposure that includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the resin component (A) includes a resin (A1) that has alkali-soluble groups (i) having a hydrogen atom, and in a portion of these alkali-soluble groups (i), the hydrogen atom is substituted with an acid-dissociable, dissolution-inhibiting group (I) represented by a general formula (I) shown below [wherein, Z represents an aliphatic cyclic group; n represents either 0 or an integer from 1 to 3; and R1 and R2 each represent, independently, a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms].

    摘要翻译： 一种用于浸渍曝光的正型抗蚀剂组合物，包括在酸作用下表现出增加的碱溶性的树脂组分（A）和在曝光时产生酸的酸产生剂组分（B），其中树脂组分（A）包括树脂 （i）具有氢原子的碱溶性基团（A1），并且在这些碱溶性基团（i）的一部分中，氢原子被酸解离的溶解抑制基团（I）取代， 通式（I）表示的化合物[式中，Z表示脂肪族环状基团， n表示0或1至3的整数; 和R 1和R 2各自独立地表示氢原子或1-5个碳原子的低级烷基]。