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公开(公告)号：US20100323584A1
公开(公告)日：2010-12-23
申请号：US12668096
申请日：2008-07-08
申请人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
发明人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.
摘要翻译： 本发明涉及一种用于金属膜的抛光液，其包含7.0重量％或更多的金属氧化剂，水溶性聚合物，氧化金属溶解剂，金属防腐剂和水，条件是抛光总量 金属膜用液体为100重量％，其中，所述水溶性聚合物的重均分子量为15万以上，为选自多元羧酸，多元羧酸和多元羧酸中的至少1种 酯。 根据本发明，提供了一种用于金属膜的抛光液，即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光，并且抛光后的抛光膜的平面度优异， 此外，即使在研磨的初始阶段也可以获得高抛光速率，并且提供了使用抛光液的抛光方法。
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公开(公告)号：US08501625B2
公开(公告)日：2013-08-06
申请号：US12668096
申请日：2008-07-08
申请人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
发明人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.
摘要翻译： 本发明涉及一种用于金属膜的抛光液，其包含7.0重量％或更多的金属氧化剂，水溶性聚合物，氧化金属溶解剂，金属防腐剂和水，条件是抛光总量 金属膜用液体为100重量％，其中，所述水溶性聚合物的重均分子量为15万以上，为选自多元羧酸，多元羧酸和多元羧酸中的至少1种 酯。 根据本发明，提供了一种用于金属膜的抛光液，即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光，并且抛光后的抛光膜的平面度优异， 此外，即使在研磨的初始阶段也可以获得高抛光速率，并且提供了使用抛光液的抛光方法。
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公开(公告)号：US20090156007A1
公开(公告)日：2009-06-18
申请号：US12320752
申请日：2009-02-04
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译： 本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。 提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。 本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料， 优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。
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公开(公告)号：US08084362B2
公开(公告)日：2011-12-27
申请号：US11802813
申请日：2007-05-25
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译： 本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。 提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。 本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有水和研磨剂的研磨浆料，其中研磨剂的表面用烷基 并且优选还包含金属氧化剂，水溶性聚合物和金属抑制剂。
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公开(公告)号：US08481428B2
公开(公告)日：2013-07-09
申请号：US13299699
申请日：2011-11-18
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
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公开(公告)号：US07994058B2
公开(公告)日：2011-08-09
申请号：US11802813
申请日：2007-05-25
IPC分类号： H01L21/302
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
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公开(公告)号：US20070232197A1
公开(公告)日：2007-10-04
申请号：US11802813
申请日：2007-05-25
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译： 本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。 提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。 本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有水和研磨剂的研磨浆料，其中研磨剂的表面用烷基 并且优选还包含金属氧化剂，水溶性聚合物和金属抑制剂。
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公开(公告)号：US20120064721A1
公开(公告)日：2012-03-15
申请号：US13299699
申请日：2011-11-18
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译： 本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。 提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。 本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料， 优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。
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公开(公告)号：US08084363B2
公开(公告)日：2011-12-27
申请号：US12320752
申请日：2009-02-04
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译： 本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。 提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。 本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料， 优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。
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公开(公告)号：US20050050803A1
公开(公告)日：2005-03-10
申请号：US10493867
申请日：2002-10-31
IPC分类号： B24B37/00 , B24D3/02 , C09C1/68 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/321
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译： 本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。 提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。 本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料， 优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。
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