公开(公告)号：US20090139656A1

公开(公告)日：2009-06-04

申请号：US12292947

申请日：2008-12-01

申请人： Koukichi Hiroshiro ,  Hideyuki Yamamoto ,  Kazuhiro Takeshita ,  Takayuki Toshima

发明人： Koukichi Hiroshiro ,  Hideyuki Yamamoto ,  Kazuhiro Takeshita ,  Takayuki Toshima

IPC分类号： H01L21/306

CPC分类号： H01L21/67057

摘要： The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion.

摘要翻译： 本发明提供一种基板处理装置，用于通过将基板浸入处理液中来处理基板。 该基板处理装置具备：处理槽，具有配置成彼此相对的一对侧壁; 以及分别对应于一对侧壁设置的一对处理液供给机构。 一对处理液供给机构分别构成为将处理液朝向连接该一对侧壁的宽度方向的处理槽的中央部供给，从而在处理液的中央区域产生上升的流动 处理槽的宽度方向。 一对侧壁的每个内壁面包括主体，位于主体上方的突出部分和位于最上方的排出引导部分，并且设置用于允许处理液体溢出的排出口。 排出引导部分在宽度方向上与中心部分相反地向上倾斜。 与主体和排出引导部相比，突出部包括位于宽度方向上更接近中央部的内端部。

公开(公告)号：US07998306B2

公开(公告)日：2011-08-16

申请号：US12292947

申请日：2008-12-01

申请人： Koukichi Hiroshiro ,  Hideyuki Yamamoto ,  Kazuhiro Takeshita ,  Takayuki Toshima

发明人： Koukichi Hiroshiro ,  Hideyuki Yamamoto ,  Kazuhiro Takeshita ,  Takayuki Toshima

IPC分类号： H01L21/304

CPC分类号： H01L21/67057

摘要： The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion.

摘要翻译： 本发明提供一种基板处理装置，用于通过将基板浸入处理液中来处理基板。 该基板处理装置具备：处理槽，具有配置成彼此相对的一对侧壁; 以及分别对应于一对侧壁设置的一对处理液供给机构。 一对处理液供给机构分别构成为将处理液朝向连接该一对侧壁的宽度方向的处理槽的中央部供给，从而在处理液的中央区域产生上升的流动 处理槽的宽度方向。 一对侧壁的每个内壁面包括主体，位于主体上方的突出部分和位于最上方的排出引导部分，并且设置用于允许处理液体溢出的排出口。 排出引导部分在宽度方向上与中心部分相反地向上倾斜。 与主体和排出引导部相比，突出部包括位于宽度方向上更接近中央部的内端部。

公开(公告)号：US08015984B2

公开(公告)日：2011-09-13

申请号：US11922502

申请日：2006-06-16

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US20080178910A1

公开(公告)日：2008-07-31

申请号：US12010745

申请日：2008-01-29

申请人： Koukichi Hiroshiro ,  Takayuki Toshima

发明人： Koukichi Hiroshiro ,  Takayuki Toshima

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  H01L21/67109

摘要： A substrate cleaning apparatus (1) of the present invention is the substrate cleaning apparatus (1) for cleaning a substrate (wafer 7) with the use of a cleaning agent (e.g., Caro's acid) that is generated by reacting plural kinds of chemical liquids (e.g., sulfuric acid and hydrogen peroxide solution). The substrate cleaning apparatus (1) comprises: a mixing unit (31) for mixing plural kinds of chemical liquids, a supplying unit (32) for supplying the chemical liquids that have been mixed by the mixing unit, onto a surface of a substrate to be cleaned; and a heating unit (14) for heating the chemical liquids that have been supplied onto the surface of the substrate by the supplying unit, on the surface of the substrate. In particular, the mixing unit (31) includes a reaction restraining mechanism (33) for restraining a reaction of the mixed chemical liquids, and the reaction restraining mechanism (33) is on a cooling mechanism for cooling the mixed chemical liquids.

摘要翻译： 本发明的基板清洗装置（1）是使用通过使多种化学液体反应而产生的清洗剂（例如卡罗酸）来清洗基板（晶片7）的基板清洗装置（1） （例如硫酸和过氧化氢溶液）。 基板清洗装置（1）包括：混合多种化学液体的混合单元（31），用于将由混合单元混合的化学液体供给到基板的表面上的供给单元（32） 清洁; 以及加热单元（14），用于在基板的表面上加热由供给单元提供到基板的表面上的化学液体。 特别地，混合单元（31）包括用于抑制混合的化学液体的反应的反应抑制机构（33），反应抑制机构（33）在用于冷却混合的化学液体的冷却机构上。

公开(公告)号：US20110099838A1

公开(公告)日：2011-05-05

申请号：US12995524

申请日：2009-02-12

申请人： Koukichi Hiroshiro ,  Takayuki Toshima

发明人： Koukichi Hiroshiro ,  Takayuki Toshima

IPC分类号： F26B3/04 ,  H01C17/02 ,  F26B25/06

CPC分类号： H05B3/0052 ,  H05B2203/021 ,  H05B2203/022

摘要： A fluid heater 20 includes a duct pipe 26 through which a fluid to be heated flows, and a heating part 23 configured to heat the duct pipe 26. One or more fillers 30 is provided inside the duct pipe 26. A substrate processing apparatus 60 includes: a supply source 92 configured to supply a liquid of a volatile organic solvent; the aforementioned fluid heater 20 configured to heat the liquid of the organic solvent supplied by the supply source 92 so as to generate a steam of the organic solvent; and a chamber 65 configured to accommodate a substrate W and to dry the substrate W accommodated therein, to which the steam of the organic solvent generated by the fluid heater 20 is supplied.

摘要翻译： 流体加热器20包括管道26，待加热的流体流过该管道26，加热部分23构造成加热管道管道26.一个或多个填料30设置在管道管道26的内部。基板处理设备60包括 ：供给源92，其配置成供给挥发性有机溶剂的液体; 上述流体加热器20构造成加热由供给源92供给的有机溶剂的液体，以产生有机溶剂的蒸汽; 以及腔室65，其被构造成容纳衬底W并且干燥容纳在其中的衬底W，由流体加热器20产生的有机溶剂的蒸汽被供应到该腔室。

公开(公告)号：US20100206337A1

公开(公告)日：2010-08-19

申请号：US12671338

申请日：2008-07-24

申请人： Koukichi Hiroshiro ,  Takayuki Toshima

发明人： Koukichi Hiroshiro ,  Takayuki Toshima

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  B08B3/04 ,  C11D7/26 ,  C11D11/0047 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67086

摘要： There is provided a substrate processing method with the use of plural kinds of liquids, capable of, after a process to a substrate by using a process liquid, rapidly and more reliably substituting the process liquid remaining on the substrate with a liquid to be subsequently used. The substrate processing method comprises: processing a substrate W by a process liquid; and supplying a substitute liquid onto the substrate and substituting the process liquid remaining on the substrate with the substitute liquid. The substitute liquid used in the substituting step has a surface tension that is smaller than a surface tension of the water, and a density that is equal to a density of the process liquid.

摘要翻译： 提供了使用多种液体的基板处理方法，其能够通过使用处理液在对基板进行处理之后，用随后使用的液体快速且更可靠地代替残留在基板上的处理液体 。 基板处理方法包括：通过处理液体处理基板W; 并将替代液体供给到基板上，并用替代液体代替残留在基板上的处理液体。 在替代步骤中使用的替代液体具有小于水的表面张力的表面张力，以及等于处理液体的密度的密度。

公开(公告)号：US20090101186A1

公开(公告)日：2009-04-23

申请号：US11922502

申请日：2006-06-16

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/04

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US08701308B2

公开(公告)日：2014-04-22

申请号：US12995524

申请日：2009-02-12

申请人： Koukichi Hiroshiro ,  Takayuki Toshima

发明人： Koukichi Hiroshiro ,  Takayuki Toshima

IPC分类号： F26B3/04

CPC分类号： H05B3/0052 ,  H05B2203/021 ,  H05B2203/022

摘要： A fluid heater includes a duct pipe through which a fluid to be heated flows, and a heating part configured to heat the duct pipe. One or more fillers is provided inside the duct pipe. A substrate processing apparatus includes: a supply source configured to supply a liquid of a volatile organic solvent; the aforementioned fluid heater configured to heat the liquid of the organic solvent supplied by the supply source so as to generate a steam of the organic solvent; and a chamber configured to accommodate a substrate W and to dry the substrate W accommodated therein, to which the steam of the organic solvent generated by the fluid heater is supplied.

摘要翻译： 流体加热器包括管道，待加热的流体通过该管道流动，加热部分构造成加热管道管道。 在管道管内设置一个或多个填料。 基板处理装置包括：供给源，其构造成供给挥发性有机溶剂的液体; 上述流体加热器构造成加热由供给源供给的有机溶剂的液体，以产生有机溶剂的蒸汽; 以及室，其被构造成容纳衬底W并且干燥容纳在其中的衬底W，所述衬底W被供应到由流体加热器产生的有机溶剂的蒸汽。

公开(公告)号：US08303724B2

公开(公告)日：2012-11-06

申请号：US13206186

申请日：2011-08-09

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US20110290280A1

公开(公告)日：2011-12-01

申请号：US13206186

申请日：2011-08-09

申请人： Koukichi HIROSHIRO ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi HIROSHIRO ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。