公开(公告)号：US20090155715A1

公开(公告)日：2009-06-18

申请号：US12356187

申请日：2009-01-20

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0045 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

摘要翻译： 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射，导致产生酸催化剂。 该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

公开(公告)号：US08394573B2

公开(公告)日：2013-03-12

申请号：US12883442

申请日：2010-09-16

申请人： Wu-Song Huang ,  Kuang-Jung Chen ,  Wai-Kin Li ,  Sen Liu

发明人： Wu-Song Huang ,  Kuang-Jung Chen ,  Wai-Kin Li ,  Sen Liu

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

CPC分类号： G03F7/40 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/405

摘要： A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.

摘要翻译： 一种降低光致抗蚀剂临界尺寸的方法，所述方法包括在基底上沉积光致抗蚀剂膜，其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜，以释放第一图案化膜中的碱，并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。

公开(公告)号：US20120070787A1

公开(公告)日：2012-03-22

申请号：US12883442

申请日：2010-09-16

申请人： Wu-Song Huang ,  Kuang-Jung Chen ,  Wai-Kin Li ,  Sen Liu

发明人： Wu-Song Huang ,  Kuang-Jung Chen ,  Wai-Kin Li ,  Sen Liu

IPC分类号： G03F7/20

CPC分类号： G03F7/40 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/405

摘要： A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.

摘要翻译： 一种降低光致抗蚀剂临界尺寸的方法，所述方法包括在基底上沉积光致抗蚀剂膜，其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜，以释放第一图案化膜中的碱，并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。

公开(公告)号：US07838200B2

公开(公告)日：2010-11-23

申请号：US12356187

申请日：2009-01-20

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi ,  Sen Liu

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi ,  Sen Liu

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： G03F7/0045 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

公开(公告)号：US20120122031A1

公开(公告)日：2012-05-17

申请号：US12946232

申请日：2010-11-15

申请人： Kuang-Jung Chen ,  Sen Liu ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Sen Liu ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/325 ,  G03F7/0397

摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomeric unit having a pendant acid labile moiety and a second monomeric unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

摘要翻译： 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物和辐射敏感酸产生剂。 成像聚合物包括具有侧链酸不稳定部分的第一单体单元和包含反应性醚部分，异氰化物部分或异氰酸酯部分的第二单体单元。 图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

公开(公告)号：US08293451B2

公开(公告)日：2012-10-23

申请号：US12543003

申请日：2009-08-18

申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028

CPC分类号： G03F7/091 ,  G03F9/7026

摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US20130001484A1

公开(公告)日：2013-01-03

申请号：US13608409

申请日：2012-09-10

申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

IPC分类号： G02B5/24

CPC分类号： G03F7/091 ,  G03F9/7026

摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US20110042653A1

公开(公告)日：2011-02-24

申请号：US12543003

申请日：2009-08-18

申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

IPC分类号： H01L51/46 ,  G03F7/004 ,  G03F7/20 ,  H01L31/02

CPC分类号： G03F7/091 ,  G03F9/7026

摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US20110042771A1

公开(公告)日：2011-02-24

申请号：US12542970

申请日：2009-08-18

申请人： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

发明人： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

IPC分类号： H01L31/0216 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0388 ,  G03F7/038 ,  G03F7/091 ,  G03F7/11 ,  H01L51/447

摘要： A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US08772376B2

公开(公告)日：2014-07-08

申请号：US12542970

申请日：2009-08-18

申请人： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

发明人： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

IPC分类号： C09D163/00 ,  C08L63/00 ,  C08K5/00 ,  B32B27/20 ,  B32B27/38 ,  C08G59/32 ,  C08G59/68 ,  G02B5/22

CPC分类号： G03F7/0388 ,  G03F7/038 ,  G03F7/091 ,  G03F7/11 ,  H01L51/447

摘要： A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。