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    Radiation window and method of manufacture
    3.
    发明申请
    Radiation window and method of manufacture 有权

    公开(公告)号：US20060280291A1

    公开(公告)日：2006-12-14

    申请号：US11411996

    申请日：2006-04-25

    申请人： D. Turner ,  Keith Decker ,  M. Roberts ,  Robert Stillwell

    发明人： D. Turner ,  Keith Decker ,  M. Roberts ,  Robert Stillwell

    IPC分类号： H01J35/18 ,  H01J5/18

    CPC分类号： H01J5/24 ,  G21K1/10 ,  G21K5/04 ,  H01J5/18 ,  H01J9/26 ,  H01J33/04 ,  H01J35/18 ,  H01J2235/183

    摘要： A radiation window device to transmit radiation as part of an x-ray source or detector includes a support to be subject to a substantial vacuum, and an opening configured to transmit radiation. A film is mounted directly on the support across the opening, and has a material and a thickness selected to transmit soft x-rays. An adhesive directly adheres the film to the support. A coating covers exposed portions of at least one of the evacuated or ambient sides of the film, and covers a portion of the support surrounding the film. The support, film and adhesive form a vacuum tight assembly capable of maintaining the substantial vacuum when one side is subject to the substantial vacuum. In addition, the vacuum tight assembly can withstand a temperature of greater than approximately 250 degrees Celsius.

    Method for surface imprinted films with carbon nanotubes
    4.
    发明申请
    Method for surface imprinted films with carbon nanotubes 有权
    碳纳米管表面印迹膜的方法

    公开(公告)号：US20070152370A1

    公开(公告)日：2007-07-05

    申请号：US11452564

    申请日：2006-06-07

    申请人： M. Roberts ,  Scott Johnson ,  Richard Hollins ,  Curtis Johnson ,  Thomas Groshens ,  David Irvin

    发明人： M. Roberts ,  Scott Johnson ,  Richard Hollins ,  Curtis Johnson ,  Thomas Groshens ,  David Irvin

    IPC分类号： B29C39/12

    CPC分类号： H01L27/14601 ,  B82Y10/00 ,  H01L27/14665 ,  H01L51/0004 ,  H01L51/0036 ,  H01L51/0048 ,  H01L51/422 ,  H01L51/424 ,  H01L51/426 ,  H01L2251/105 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/778 ,  Y10S977/842 ,  Y10T156/1023 ,  Y10T156/1039 ,  Y10T156/1041 ,  Y10T156/1044

    摘要： A method of making films surface imprinted with nanometer-sized particles to produce micro- and/or nano-structured electron and hole collecting interfaces, include providing at least one transparent substrate, providing at least one photoabsorbing conjugated polymer, providing a sufficient amount of nanometer-sized particles to produce a charge separation interface, providing at least one transparent polymerizable layer, embedding the nanometer-sized particles in the conjugated polymer, applying the polymerizable layer and the conjugated polymer/nanometer-sized particle mixture on separate substrates where the nanometer-sized particles form a stamp surface, imprinting the stamp surface into the surface of the polymerizable film layer to produce micro- and/or nano-structured electron and hole collecting interfaces, polymerizing the polymerizable film layer to form a conformal gap, and filling the gap with at least one photoabsorbing material to promote the generation of photoexcited electrons and transport to the charge separation interface.

    摘要翻译： 制造表面印有纳米尺寸颗粒以产生微观和/或纳米结构的电子和空穴收集界面的膜的方法包括提供至少一个透明基底，提供至少一种光吸收共轭聚合物，提供足够量的纳米 提供至少一个透明可聚合层，将纳米尺寸的颗粒嵌入到共轭聚合物中，将可聚合层和共轭聚合物/纳米尺寸的颗粒混合物施加在分开的基底上， 大小的颗粒形成印模表面，将印模表面印刷到可聚合膜层的表面中以产生微观和/或纳米结构的电子和空穴收集界面，聚合可聚合膜层以形成共形间隙，并填充间隙 具有至少一种光吸收材料以促进产生光激发的电子 电解质和运输到电荷分离界面。

    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
    5.
    发明申请
    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权

    公开(公告)号：US20060223279A1

    公开(公告)日：2006-10-05

    申请号：US11097876

    申请日：2005-04-01

    申请人： Robert Patraw ,  M. Roberts ,  Keith Cook

    发明人： Robert Patraw ,  M. Roberts ,  Keith Cook

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76229

    摘要： First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.