Positive working photoresist composition
    3.
    发明授权
    Positive working photoresist composition 失效
    正工作光致抗蚀剂组成

    公开(公告)号:US5554481A

    公开(公告)日:1996-09-10

    申请号:US361697

    申请日:1994-12-22

    IPC分类号: C08G8/20 G03F7/022 G03F7/023

    CPC分类号: C08G8/20 G03F7/022 G03F7/023

    摘要: A positive working photoresist composition sensitive to radiation, having high resolving power, high sensitivity, and excellent storage stability, and further forming a pattern capable of accurately reproducing a mask size in a wide range of photomask line width. The present invention has been obtained by a composition containing at least one of a 1,2-napthoquinonediazido-5-sulfonic acid ester of a polyhydroxy compound and a 1,2-napthoquinonediazido-4-sulfonic acid ester of a polyhydroxy compound in combination with at least one alkali-soluble resin.

    摘要翻译: 对辐射敏感的正性光致抗蚀剂组合物,具有高分辨能力,高灵敏度和优异的储存稳定性,并进一步形成能够在宽范围的光掩模线宽度下精确地再现掩模尺寸的图案。 本发明是通过含有多羟基化合物的1,2-萘醌二叠氮基-5-磺酸酯和多羟基化合物的1,2-萘醌二叠氮基-4-磺酸酯中的至少一种的组合物而得到的, 至少一种碱溶性树脂。