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    Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers
    6.
    发明授权
    Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layers 有权
    在最厚的金属间介电层内制造金属绝缘体金属（MIM）电容器的方法

    公开(公告)号：US08716100B2

    公开(公告)日：2014-05-06

    申请号：US13212922

    申请日：2011-08-18

    申请人： Kuo-Chyuan Tzeng ,  Luan C. Tran ,  Chen-Jong Wang ,  Kuo-Chi Tu ,  Hsiang-Fan Lee

    发明人： Kuo-Chyuan Tzeng ,  Luan C. Tran ,  Chen-Jong Wang ,  Kuo-Chi Tu ,  Hsiang-Fan Lee

    IPC分类号： H01L21/20

    CPC分类号： H01L28/86 ,  H01L23/5223 ,  H01L28/40 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (Si3N4, ZrO2, HfO2, BST . . . etc) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.

    摘要翻译： MIM电容器的实施例可以嵌入到具有足够厚度（例如，10K〜30K）的厚IMD层中以获得高电容，其可以在更薄的IMD层之上。 可以在三个相邻的金属层之间形成MIM电容器，这两个相邻的金属层具有两个分开三个相邻金属层的厚的IMD层。 诸如TaN或TiN的材料用作底部/顶部电极和Cu屏障。 厚IMD层上方的金属层可以用作顶部电极连接。 厚IMD层下面的金属层可以用作底部电极连接。 电容器可以是不同的形状，例如圆柱形或凹形。 可以使用多种材料（Si3N4，ZrO2，HfO2，BST等）作为介电材料。 MIM电容器由一个或两个额外的掩模形成，同时形成电路的其他非电容器逻辑。

    Metal-Insulator-Metal Capacitor and Method of Fabricating
    7.
    发明申请
    Metal-Insulator-Metal Capacitor and Method of Fabricating 有权
    金属绝缘体 - 金属电容器和制造方法

    公开(公告)号：US20130043560A1

    公开(公告)日：2013-02-21

    申请号：US13212922

    申请日：2011-08-18

    申请人： Kuo-Chyuan Tzeng ,  Luan C. Tran ,  Chen-Jong Wang ,  Kuo-Chi Tu ,  Hsiang-Fan Lee

    发明人： Kuo-Chyuan Tzeng ,  Luan C. Tran ,  Chen-Jong Wang ,  Kuo-Chi Tu ,  Hsiang-Fan Lee

    IPC分类号： H01L27/06 ,  H01L21/02

    CPC分类号： H01L28/86 ,  H01L23/5223 ,  H01L28/40 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating the three adjacent metal layers. Materials such as TaN or TiN are used as bottom/top electrodes & Cu barrier. The metal layer above the thick IMD layer may act as the top electrode connection. The metal layer under the thick IMD layer may act as the bottom electrode connection. The capacitor may be of different shapes such as cylindrical shape, or a concave shape. Many kinds of materials (Si3N4, ZrO2, HfO2, BST . . . etc) can be used as the dielectric material. The MIM capacitors are formed by one or two extra masks while forming other non-capacitor logic of the circuit.

    摘要翻译： MIM电容器的实施例可以嵌入到具有足够厚度（例如，10K〜30K）的厚IMD层中以获得高电容，其可以在更薄的IMD层之上。 可以在三个相邻的金属层之间形成MIM电容器，这两个相邻的金属层具有两个分开三个相邻金属层的厚的IMD层。 诸如TaN或TiN的材料用作底部/顶部电极和Cu屏障。 厚IMD层上方的金属层可以用作顶部电极连接。 厚IMD层下面的金属层可以用作底部电极连接。 电容器可以是不同的形状，例如圆柱形或凹形。 可以使用多种材料（Si3N4，ZrO2，HfO2，BST等）作为介电材料。 MIM电容器由一个或两个额外的掩模形成，同时形成电路的其他非电容器逻辑。