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1.发明授权Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof 有权发光氮化镓系III-V族化合物半导体器件及其制造方法公开(公告)号：US08263991B2
公开(公告)日：2012-09-11
申请号：US11979963
申请日：2007-11-13
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/46
摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
摘要翻译： 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。
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2.发明申请Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof 审中-公开发光氮化镓系III-V族化合物半导体器件及其制造方法公开(公告)号：US20090275156A1
公开(公告)日：2009-11-05
申请号：US12458482
申请日：2009-07-14
IPC分类号： H01L21/20
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/46
摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
摘要翻译： 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。
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3.发明申请Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof 有权发光氮化镓系III-V族化合物半导体器件及其制造方法公开(公告)号：US20080303034A1
公开(公告)日：2008-12-11
申请号：US11979963
申请日：2007-11-13
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/46
摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
摘要翻译： 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。
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公开(公告)号：US20070246711A1
公开(公告)日：2007-10-25
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。
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公开(公告)号：US07632693B2
公开(公告)日：2009-12-15
申请号：US12149288
申请日：2008-04-30
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L29/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。
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公开(公告)号：US07476912B2
公开(公告)日：2009-01-13
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。
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公开(公告)号：US20080241979A1
公开(公告)日：2008-10-02
申请号：US12149288
申请日：2008-04-30
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。
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公开(公告)号：US20100078671A1
公开(公告)日：2010-04-01
申请号：US12354820
申请日：2009-01-16
申请人： Kuo-Chin HUANG , Shyi-Ming Pan , Hung-Li Pan , Cheng-Kuo Huang , Wei-Kang Cheng , Yi-Sheng Ting
发明人： Kuo-Chin HUANG , Shyi-Ming Pan , Hung-Li Pan , Cheng-Kuo Huang , Wei-Kang Cheng , Yi-Sheng Ting
IPC分类号： H01L33/00
摘要： A nitride based semiconductor light emitting device is revealed. The light emitting device includes a light emitting epitaxial layer, a P-type electrode and a N-type electrode. The P-type electrode and the N-type electrode are disposed on the light emitting epitaxial layer. The light emitting device features on that the N-type electrode is arranged on the inner side of the P-type electrode. The P-type electrode extends toward the N-type electrode along the edge of the light emitting epitaxial layer and the N-type electrode extends inward along the inner side of the P-type electrode. By means of the electrode pattern with special design, the light emitting area of the light emitting device is increased.
摘要翻译： 揭示了一种基于氮化物的半导体发光器件。 发光器件包括发光外延层，P型电极和N型电极。 P型电极和N型电极设置在发光外延层上。 发光器件的特征在于N型电极布置在P型电极的内侧。 P型电极沿着发光外延层的边缘朝向N型电极延伸，并且N型电极沿着P型电极的内侧向内延伸。 通过具有特殊设计的电极图案，发光器件的发光面积增加。
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9.发明申请Light-Emitting Device with Reflection Layer and Structure of the Reflection Layer 有权具有反射层的发光装置和反射层的结构公开(公告)号：US20090267095A1
公开(公告)日：2009-10-29
申请号：US12234652
申请日：2008-09-20
IPC分类号： H01L33/00
摘要： The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.
摘要翻译： 本发明提供一种具有反射层的发光装置和反射层的结构。 反射层包括各种介电材料。 反射层包括多个电介质层。 除了两种材料类型和两种厚度的组合之外，多个电介质层的材料具有两种或更多种类型，具有两种或更多种厚度，用于形成具有各种结构的反射层。 根据本发明的反射层可以应用于各种类型的发光二极管，以形成新的发光器件。 由于反射率优异，因此能够提高发光元件的发光效率。
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10.发明授权公开(公告)号：US08053797B2
公开(公告)日：2011-11-08
申请号：US12234652
申请日：2008-09-20
IPC分类号： H01L33/00
摘要： The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.
摘要翻译： 本发明提供一种具有反射层的发光装置和反射层的结构。 反射层包括各种介电材料。 反射层包括多个电介质层。 除了两种材料类型和两种厚度的组合之外，多个电介质层的材料具有两种或更多种类型，具有两种或更多种厚度，用于形成具有各种结构的反射层。 根据本发明的反射层可以应用于各种类型的发光二极管，以形成新的发光器件。 由于反射率优异，因此能够提高发光元件的发光效率。
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