Abstract:
A light convergence module with a heat dissipation function is revealed. It comprises a substrate, an assembling unit, a light convergence lampshade, and a heat sink, wherein the assembling unit with a first surface assembling to the substrate and a second surface assembling to the light convergence lampshade comprises a locating block and a plurality of position limiting blocks for respectively engaging with a locating slot and a plurality of position limiting slots of the substrate, and two buckles for correspondingly clasping two concave slots of the substrate to limit the substrate in position, and wherein the heat sink comprises a plurality of interspaces formed between every two adjacent heat dissipation fins for securing the buckles of the assembling unit and allowing the heat sink to closely dispose on the substrate.
Abstract:
A converging lens with a multiple-curvature compound surface is revealed. The converging lens includes an incident surface and an emission surface. A crest-line along X axis and a crest-line along Y axis are on the emission surface, crossed each other and dividing the emission surface into four curved surface sections. The X-axis curvature as well as the Y-axis curvature of each curved surface section can be the same or different. An angle θ between the crest-line along X axis and the X-axis ranges from 0˜30 degrees. Thereby light from a light sources passes through the converging lens and projects to produce a light pattern required. The converging lens is used in concentrator modules and lighting fixtures.
Abstract:
A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
Abstract:
A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.
Abstract:
A light emitting diode (LED) with higher illumination efficiency is revealed. The LED includes a LED chip and an optical layer arranged on the bottom of the LED chip. The optical layer is a light-guiding layer, a light reflective layer or an energy-conversion layer that increases light emitting efficiency of the LED. Furthermore, a rough layer is disposed between the LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the illumination efficiency of the LED is increased.
Abstract:
A hanging tab with a sensing chip, when in manufacturing, a fine net section for sewing or knitting and a frame are integrally shaped by injection molding; the frame has a fine net section, and includes an integrally formed fine-net frame surrounding a fine net, and has a sensing-chip frame section with a recess to receive a sensing chip; a sensing-chip cover can be integrally formed with the frame or separately formed, it can cover the recess to seal the sensing chip in the sensing-chip frame section. Thereby, an effect of simplifying the manufacturing process and increasing the speed as well as lowering the cost of production can be acquired.
Abstract:
The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.
Abstract:
An alternating current (AC) light emitting device is revealed. The AC light emitting device includes a substrate and a plurality of light emitting units arranged on the substrate. The light emitting unit consists of a first semiconductor layer, a light emitting layer, a second semiconductor layer, at least one electrode and at least one second electrode respectively arranged on the first semiconductor layer and the second semiconductor layer from bottom to top. The plurality of light emitting units is coupled to at least one adjacent light emitting unit by a plurality of conductors. By the plurality of conductors that connect light emitting units with at least one adjacent light emitting unit, an open circuit will not occur in the AC light emitting device once one of the conductors is broken.
Abstract:
The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.