公开(公告)号：US20070246711A1

公开(公告)日：2007-10-25

申请号：US11409003

申请日：2006-04-24

申请人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。

公开(公告)号：US07476912B2

公开(公告)日：2009-01-13

申请号：US11409003

申请日：2006-04-24

申请人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。

公开(公告)号：US20080241979A1

公开(公告)日：2008-10-02

申请号：US12149288

申请日：2008-04-30

申请人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。

公开(公告)号：US07632693B2

公开(公告)日：2009-12-15

申请号：US12149288

申请日：2008-04-30

申请人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L29/00

CPC分类号： H01L33/22

摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。

公开(公告)号：US20070200119A1

公开(公告)日：2007-08-30

申请号：US11307875

申请日：2006-02-26

申请人： Yun-Li Li ,  Way-Jze Wen ,  Fen-Ren Chien

发明人： Yun-Li Li ,  Way-Jze Wen ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L33/20

摘要： A light emitting diode (LED) chip mainly includes a substrate, a first type doped semiconductor layer, light-emitting layers, second type doped semiconductor layers, a first electrode and second electrodes. The first type doped semiconductor layer is disposed on the substrate and includes protrusions which is upward extended; the light-emitting layers are disposed on the corresponding protrusions respectively; the second type doped semiconductor layers are disposed on the corresponding light-emitting layers respectively; the first electrode is disposed on the first type doped semiconductor layer except the protrusions and electrically connected to the first type doped semiconductor layer; the second electrodes are disposed on the corresponding second type doped semiconductor layers respectively; and the first electrode is electrically insulated from the second electrodes.

摘要翻译： 发光二极管（LED）芯片主要包括基板，第一类型掺杂半导体层，发光层，第二类型掺杂半导体层，第一电极和第二电极。 所述第一掺杂半导体层设置在所述基板上，并且包括向上延伸的突起; 发光层分别设置在相应的凸起上; 第二类掺杂半导体层分别设置在相应的发光层上; 第一电极设置在除了突起之外的第一类型掺杂半导体层上，并电连接到第一类型掺杂半导体层; 第二电极分别设置在相应的第二类型的掺杂半导体层上; 并且第一电极与第二电极电绝缘。

公开(公告)号：US20080079013A1

公开(公告)日：2008-04-03

申请号：US11535992

申请日：2006-09-28

申请人： Yun-Li Li ,  Tzu-Chi Wen ,  Liang-Wen Wu ,  Chi-Jui Chen ,  Fen-Ren Chien

发明人： Yun-Li Li ,  Tzu-Chi Wen ,  Liang-Wen Wu ,  Chi-Jui Chen ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/08

摘要： A light emitting diode structure including a substrate, a first type doped semiconductor layer, an insulating layer, light emitting layers, a second type doped semiconductor layer, a first pad and a second pad is provided. The first type doped semiconductor layer is disposed on the substrate. The insulating layer having openings is disposed on the first type doped semiconductor layer for exposing a part of the first type doped semiconductor layer. The light emitting layers are disposed within the corresponding openings of the insulating layer respectively. The second type doped semiconductor layer is disposed on the insulating layer and the light emitting layers. The first pad is disposed on the first type doped semiconductor layer and is electrically connected thereto. The second pad is disposed on the second type doped semiconductor layer and is electrically connected thereto. Besides, air gaps may also be utilized for separating the light emitting layers.

摘要翻译： 提供了包括衬底，第一类型掺杂半导体层，绝缘层，发光层，第二类型掺杂半导体层，第一衬垫和第二衬垫的发光二极管结构。 第一类掺杂半导体层设置在基板上。 具有开口的绝缘层设置在第一类掺杂半导体层上，用于暴露第一类掺杂半导体层的一部分。 发光层分别设置在绝缘层的相应开口内。 第二类掺杂半导体层设置在绝缘层和发光层上。 第一焊盘设置在第一型掺杂半导体层上并与其电连接。 第二焊盘设置在第二型掺杂半导体层上并与其电连接。 此外，气隙也可以用于分离发光层。

公开(公告)号：US08829543B2

公开(公告)日：2014-09-09

申请号：US13787765

申请日：2013-03-06

申请人： Yun-Li Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

发明人： Yun-Li Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/60 ,  H01L33/06 ,  H01L33/40 ,  H01L33/08 ,  H01L33/20

CPC分类号： H01L33/60 ,  H01L33/06 ,  H01L33/20 ,  H01L33/405

摘要： A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.

摘要翻译： 提供了包括第一类型掺杂半导体层，发光层，第二类型掺杂半导体层和反射层的半导体发光器件。 第一类掺杂半导体层具有台面部分和凹陷部分。 发光层设置在台面部分上，具有将第一表面与第二表面连接的第一表面，第二表面和第一侧表面。 第二种掺杂半导体层设置在发光层上，并具有连接第三表面和第四表面的第三表面，第四表面和第二侧表面。 从平行于发光层的观察方向观察，反射层覆盖第一侧面的至少一部分和第二侧面的至少一部分。 还提供了一种倒装芯片封装器件。

公开(公告)号：US20130277641A1

公开(公告)日：2013-10-24

申请号：US13787765

申请日：2013-03-06

申请人： Yun-Li Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

发明人： Yun-Li Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC分类号： H01L33/60 ,  H01L33/06

CPC分类号： H01L33/60 ,  H01L33/06 ,  H01L33/20 ,  H01L33/405

摘要： A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.

摘要翻译： 提供了包括第一类型掺杂半导体层，发光层，第二类型掺杂半导体层和反射层的半导体发光器件。 第一类掺杂半导体层具有台面部分和凹陷部分。 发光层设置在台面部分上，具有将第一表面与第二表面连接的第一表面，第二表面和第一侧表面。 第二种掺杂半导体层设置在发光层上，并具有连接第三表面和第四表面的第三表面，第四表面和第二侧表面。 从平行于发光层的观察方向观察，反射层覆盖第一侧面的至少一部分和第二侧面的至少一部分。 还提供了一种倒装芯片封装器件。

公开(公告)号：US20130146912A1

公开(公告)日：2013-06-13

申请号：US13670412

申请日：2012-11-06

申请人： Po-Jen Su ,  Yun-Li Li ,  Cheng-Yen Chen ,  Gwo-Jiun Sheu

发明人： Po-Jen Su ,  Yun-Li Li ,  Cheng-Yen Chen ,  Gwo-Jiun Sheu

IPC分类号： H01L33/60

CPC分类号： H01L33/641 ,  H01L23/3677 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electronic device including an insulating substrate, a plurality of conductive vias and a chip is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The conductive vias pass through the insulating substrate. The chip is disposed on the upper surface of the insulating substrate and includes a chip substrate, a semiconductor layer and a plurality of contacts. The semiconductor layer is located between the chip substrate and the contacts. The contacts are electrically connected to the conductive vias. The material of the insulating substrate and the material of the chip substrate are the same.

摘要翻译： 提供了包括绝缘基板，多个导电通孔和芯片的电子设备。 绝缘基板具有彼此相对的上表面和下表面。 导电通孔穿过绝缘基板。 芯片设置在绝缘基板的上表面上，并且包括芯片基板，半导体层和多个触点。 半导体层位于芯片基板和触点之间。 触点电连接到导电通孔。 绝缘基板的材料和芯片基板的材料相同。

公开(公告)号：US20110139167A1

公开(公告)日：2011-06-16

申请号：US12964687

申请日：2010-12-09

申请人： Yun-Li Li ,  Ching-Ching Chiu

发明人： Yun-Li Li ,  Ching-Ching Chiu

IPC分类号： A45D29/00

CPC分类号： A45D29/00

摘要： A nail care device includes a covering part, a light-emitting component, and a light-emitting control module. The covering part is configured for covering a tip of a digit of a limb. The light-emitting component is disposed in the covering part in a manner that light emitted by the light-emitting component irradiates a nail on the tip of the digit covered by the covering part. The light-emitting control module is coupled to the light-emitting component and is operable to control operation of the light-emitting component.

摘要翻译： 指甲护理装置包括覆盖部分，发光部件和发光控制模块。 覆盖部分被配置为覆盖肢体的数字的尖端。 发光部件以由发光部件发出的光照射由覆盖部覆盖的数字的尖端上的指甲的方式设置在覆盖部分中。 发光控制模块耦合到发光组件，并且可操作以控制发光组件的操作。