公开(公告)号：US20120305959A1

公开(公告)日：2012-12-06

申请号：US13241667

申请日：2011-09-23

Applicant: Kuo-Hui Yu ,  Chang-Hsin Chu ,  Chi-Lung Wu ,  Shin-Jia Chiou ,  Chung-Hsin Lin ,  Jui-Chun Chang

Inventor： Kuo-Hui Yu ,  Chang-Hsin Chu ,  Chi-Lung Wu ,  Shin-Jia Chiou ,  Chung-Hsin Lin ,  Jui-Chun Chang

IPC: H01L33/58 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0756 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/0002 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.

Abstract translation: 发光二极管（LED）装置包括具有第一和第二表面的基板，设置在第一表面上的第一结合层，第一外延结构，具有第三和第四表面，并且包括第一和第二表面 第二沟槽，其中所述第一外延结构包括依次层叠在所述第一接合层上的第二电型半导体层，有源层和第一电型半导体层，并且所述第一沟槽从所述第四表面延伸到所述第一电型半导体 层，所述第二凹槽从所述第四表面延伸到所述第三表面，填充在所述第一和第二凹槽中的第一电气型导电分支，第一电气型电极层，绝缘层，以及第二电气 电连接到第二电气型半导体层。

公开(公告)号：US20130049060A1

公开(公告)日：2013-02-28

申请号：US13397929

申请日：2012-02-16

Applicant: Kuo-Hui Yu ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Chang-Hsin Chu

IPC: H01L33/42

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: A light-emitting diode structure. In one embodiment, the light-emitting diode structure includes an insulation substrate, a light-emitting structure having a first electrical semiconductor layer, a light-emitting layer, and a second electrical semiconductor layer successively stacked on the insulating substrate and containing a first electrode pad region, a second electrode pad region, and a light-emitting region, a first and second electrical electrode pad respectively disposed on the first and second electrode pad region, a second electrical conducting finger disposed on the light-emitting structure and connected to the second electrical electrode pad and the second electrical semiconductor layer, and a first insulating layer for insulating the second electrical conducting finger from the first electrical semiconductor layer and the light-emitting layer. A bottom surface of the second electrical electrode pad is located below an upper surface of the second electrical semiconductor layer.

Abstract translation: 发光二极管结构。 在一个实施例中，发光二极管结构包括绝缘基板，具有第一电半导体层，发光层和连续层叠在绝缘基板上并包含第一电极的第二电半导体层的发光结构 焊盘区域，第二电极焊盘区域和发光区域，分别设置在第一和第二电极焊盘区域上的第一和第二电极焊盘，设置在发光结构上并连接到发光结构的第二导电指状物 第二电极焊盘和第二电半导体层，以及用于将第二导电指状物与第一电半导体层和发光层绝缘的第一绝缘层。 第二电极焊盘的底表面位于第二电半导体层的上表面的下方。

公开(公告)号：US20060017372A1

公开(公告)日：2006-01-26

申请号：US11105402

申请日：2005-04-14

Applicant: Chang-Hsin Chu ,  Kuo-Hui Yu ,  Shi-Ming Chen

Inventor： Chang-Hsin Chu ,  Kuo-Hui Yu ,  Shi-Ming Chen

IPC: H05B33/00

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0016

Abstract: A lighting device and a method for manufacturing the same are described. First, a semiconductor layer of a first electrical property, an active layer and a semiconductor layer of a second electrical property are sequentially formed, and part of them are removed to form a mesa. A transparent contact layer is formed thereon, and thus forms a stack. Afterwards, a passivation layer is deposited on the stack and a first part of the semiconductor layer of the first electrical property adjacent to the stack. Part of the passivation layer is removed to expose part of the transparent contact layer. Then, an electrode of the second electrical property is formed on the exposed transparent contact layer. Afterwards, the electrode of the second electrical property is extended to the passivation layer on the first part of the semiconductor layer of the first electrical property to form a guard ring.

Abstract translation: 对照明装置及其制造方法进行说明。 首先，依次形成具有第一电特性的半导体层，有源层和第二电性质的半导体层，并且去除其中的一部分以形成台面。 在其上形成透明接触层，从而形成叠层。 之后，钝化层沉积在堆叠上，并且与堆叠相邻的第一电性质的半导体层的第一部分被沉积。 去除钝化层的一部分以暴露部分透明接触层。 然后，在露出的透明接触层上形成第二电性质的电极。 之后，第二电性能的电极延伸到第一电性能的半导体层的第一部分上的钝化层以形成保护环。

公开(公告)号：US08507938B2

公开(公告)日：2013-08-13

申请号：US12753106

申请日：2010-04-02

Applicant: Kuo-Hui Yu ,  Tsung-Hung Lu ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Tsung-Hung Lu ,  Chang-Hsin Chu

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.

Abstract translation: 描述了一种发光二极管（LED）结构及其制造方法。 发光二极管结构包括p型电极，接合衬底，p型半导体层，有源层，n型半导体层，外延生长衬底和n型电极。 接合基板设置在p型电极上。 p型半导体层设置在接合基板上。 有源层设置在p型半导体层上。 n型半导体层设置在有源层上。 外延生长衬底设置在n型半导体层上，其中外延生长衬底包括穿透外延生长衬底的开口。 n型电极设置在开口中并与n型半导体层电连接。

公开(公告)号：US20120085988A1

公开(公告)日：2012-04-12

申请号：US13037737

申请日：2011-03-01

Applicant: Kuo-Hui Yu ,  Jing-Hong Li ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Jing-Hong Li ,  Chang-Hsin Chu

IPC: H01L33/06 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed to the epitaxial layer and the second electrode is disposed on the epitaxial layer, and a first conductive finger of the second electrode and a first conductive finger of the first electrode are overlapped. Because the first conductive finger of the second electrode and the first conductive finger of the first electrode are overlapped, the light-emitting area of the LED device can be increased and the light shielded by the electrodes can be decreased significantly. Besides, overlapped electrodes can form a capacitor which can store electric charges to enhance the antistatic ability of the LED device.

Abstract translation: 发光二极管（LED）装置包括衬底，外延层，第一电极和第二电极。 外延层设置在基板上。 第一电极设置在外延层上，第二电极设置在外延层上，第二电极的第一导电指状物和第一电极的第一导电指状物重叠。 因为第二电极的第一导电指状物和第一电极的第一导电指状物重叠，所以可以增加LED器件的发光面积，并且可以显着降低由电极屏蔽的光。 此外，重叠的电极可以形成可以存储电荷的电容器，以提高LED器件的抗静电能力。

公开(公告)号：US20110312113A1

公开(公告)日：2011-12-22

申请号：US13221908

申请日：2011-08-31

Applicant: Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

Inventor： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

IPC: H01L33/20

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

Abstract translation: 公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于 的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题 从第一和第二电极焊盘。

公开(公告)号：US20080157097A1

公开(公告)日：2008-07-03

申请号：US11699942

申请日：2007-01-30

Applicant: Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yeh ,  Chien-Kai Chung

Inventor： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yeh ,  Chien-Kai Chung

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

Abstract translation: 公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于 的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题 从第一和第二电极焊盘。

公开(公告)号：US08008680B2

公开(公告)日：2011-08-30

申请号：US12887199

申请日：2010-09-21

Applicant: Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

Inventor： Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/0079 ,  H01L33/32

Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Abstract translation: 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

公开(公告)号：US20090065794A1

公开(公告)日：2009-03-12

申请号：US12230887

申请日：2008-09-08

Applicant: Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

Inventor： Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/0079 ,  H01L33/32

Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Abstract translation: 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

公开(公告)号：US07821026B2

公开(公告)日：2010-10-26

申请号：US12230887

申请日：2008-09-08

Applicant: Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

Inventor： Kuo-Hui Yu ,  Yu-Cheng Yang ,  Cheng-Ta Kuo

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/0079 ,  H01L33/32

Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Abstract translation: 提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构， 第一电极和第二电极。 衬底上的第一半导体层具有第一部分和第二部分。 有源层和第二半导体层随后设置在第一部分上。 第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。 第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。