公开(公告)号：US08507938B2

公开(公告)日：2013-08-13

申请号：US12753106

申请日：2010-04-02

Applicant: Kuo-Hui Yu ,  Tsung-Hung Lu ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Tsung-Hung Lu ,  Chang-Hsin Chu

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.

Abstract translation: 描述了一种发光二极管（LED）结构及其制造方法。 发光二极管结构包括p型电极，接合衬底，p型半导体层，有源层，n型半导体层，外延生长衬底和n型电极。 接合基板设置在p型电极上。 p型半导体层设置在接合基板上。 有源层设置在p型半导体层上。 n型半导体层设置在有源层上。 外延生长衬底设置在n型半导体层上，其中外延生长衬底包括穿透外延生长衬底的开口。 n型电极设置在开口中并与n型半导体层电连接。

公开(公告)号：US20120085988A1

公开(公告)日：2012-04-12

申请号：US13037737

申请日：2011-03-01

Applicant: Kuo-Hui Yu ,  Jing-Hong Li ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Jing-Hong Li ,  Chang-Hsin Chu

IPC: H01L33/06 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed to the epitaxial layer and the second electrode is disposed on the epitaxial layer, and a first conductive finger of the second electrode and a first conductive finger of the first electrode are overlapped. Because the first conductive finger of the second electrode and the first conductive finger of the first electrode are overlapped, the light-emitting area of the LED device can be increased and the light shielded by the electrodes can be decreased significantly. Besides, overlapped electrodes can form a capacitor which can store electric charges to enhance the antistatic ability of the LED device.

Abstract translation: 发光二极管（LED）装置包括衬底，外延层，第一电极和第二电极。 外延层设置在基板上。 第一电极设置在外延层上，第二电极设置在外延层上，第二电极的第一导电指状物和第一电极的第一导电指状物重叠。 因为第二电极的第一导电指状物和第一电极的第一导电指状物重叠，所以可以增加LED器件的发光面积，并且可以显着降低由电极屏蔽的光。 此外，重叠的电极可以形成可以存储电荷的电容器，以提高LED器件的抗静电能力。

公开(公告)号：US20130049060A1

公开(公告)日：2013-02-28

申请号：US13397929

申请日：2012-02-16

Applicant: Kuo-Hui Yu ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Chang-Hsin Chu

IPC: H01L33/42

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: A light-emitting diode structure. In one embodiment, the light-emitting diode structure includes an insulation substrate, a light-emitting structure having a first electrical semiconductor layer, a light-emitting layer, and a second electrical semiconductor layer successively stacked on the insulating substrate and containing a first electrode pad region, a second electrode pad region, and a light-emitting region, a first and second electrical electrode pad respectively disposed on the first and second electrode pad region, a second electrical conducting finger disposed on the light-emitting structure and connected to the second electrical electrode pad and the second electrical semiconductor layer, and a first insulating layer for insulating the second electrical conducting finger from the first electrical semiconductor layer and the light-emitting layer. A bottom surface of the second electrical electrode pad is located below an upper surface of the second electrical semiconductor layer.

Abstract translation: 发光二极管结构。 在一个实施例中，发光二极管结构包括绝缘基板，具有第一电半导体层，发光层和连续层叠在绝缘基板上并包含第一电极的第二电半导体层的发光结构 焊盘区域，第二电极焊盘区域和发光区域，分别设置在第一和第二电极焊盘区域上的第一和第二电极焊盘，设置在发光结构上并连接到发光结构的第二导电指状物 第二电极焊盘和第二电半导体层，以及用于将第二导电指状物与第一电半导体层和发光层绝缘的第一绝缘层。 第二电极焊盘的底表面位于第二电半导体层的上表面的下方。

公开(公告)号：US20060017372A1

公开(公告)日：2006-01-26

申请号：US11105402

申请日：2005-04-14

Applicant: Chang-Hsin Chu ,  Kuo-Hui Yu ,  Shi-Ming Chen

Inventor： Chang-Hsin Chu ,  Kuo-Hui Yu ,  Shi-Ming Chen

IPC: H05B33/00

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0016

Abstract: A lighting device and a method for manufacturing the same are described. First, a semiconductor layer of a first electrical property, an active layer and a semiconductor layer of a second electrical property are sequentially formed, and part of them are removed to form a mesa. A transparent contact layer is formed thereon, and thus forms a stack. Afterwards, a passivation layer is deposited on the stack and a first part of the semiconductor layer of the first electrical property adjacent to the stack. Part of the passivation layer is removed to expose part of the transparent contact layer. Then, an electrode of the second electrical property is formed on the exposed transparent contact layer. Afterwards, the electrode of the second electrical property is extended to the passivation layer on the first part of the semiconductor layer of the first electrical property to form a guard ring.

Abstract translation: 对照明装置及其制造方法进行说明。 首先，依次形成具有第一电特性的半导体层，有源层和第二电性质的半导体层，并且去除其中的一部分以形成台面。 在其上形成透明接触层，从而形成叠层。 之后，钝化层沉积在堆叠上，并且与堆叠相邻的第一电性质的半导体层的第一部分被沉积。 去除钝化层的一部分以暴露部分透明接触层。 然后，在露出的透明接触层上形成第二电性质的电极。 之后，第二电性能的电极延伸到第一电性能的半导体层的第一部分上的钝化层以形成保护环。

公开(公告)号：US20120305959A1

公开(公告)日：2012-12-06

申请号：US13241667

申请日：2011-09-23

Applicant: Kuo-Hui Yu ,  Chang-Hsin Chu ,  Chi-Lung Wu ,  Shin-Jia Chiou ,  Chung-Hsin Lin ,  Jui-Chun Chang

Inventor： Kuo-Hui Yu ,  Chang-Hsin Chu ,  Chi-Lung Wu ,  Shin-Jia Chiou ,  Chung-Hsin Lin ,  Jui-Chun Chang

IPC: H01L33/58 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0756 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/0002 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.

Abstract translation: 发光二极管（LED）装置包括具有第一和第二表面的基板，设置在第一表面上的第一结合层，第一外延结构，具有第三和第四表面，并且包括第一和第二表面 第二沟槽，其中所述第一外延结构包括依次层叠在所述第一接合层上的第二电型半导体层，有源层和第一电型半导体层，并且所述第一沟槽从所述第四表面延伸到所述第一电型半导体 层，所述第二凹槽从所述第四表面延伸到所述第三表面，填充在所述第一和第二凹槽中的第一电气型导电分支，第一电气型电极层，绝缘层，以及第二电气 电连接到第二电气型半导体层。

公开(公告)号：US20120086029A1

公开(公告)日：2012-04-12

申请号：US13037827

申请日：2011-03-01

Applicant: Kuo-Hui YU ,  Chang-Hsin Chu

Inventor： Kuo-Hui YU ,  Chang-Hsin Chu

IPC: H01L33/46

CPC classification number: H01L33/20 ,  H01L33/46 ,  H01L2933/0025

Abstract: A light-emitting diode (LED) device includes a substrate and an epitaxial layer which is disposed on a surface of the substrate. A depression is disposed to a sidewall of the LED device, and a reflective layer is disposed to on least one portion of the depression. By the reflective layer disposed to the depression of the sidewall of the LED device, the light loss caused by the interface of the substrate and the epitaxial layer can be reduced, the light absorbed by the substrate can be decreased, and the angle of the light exiting from the LED device can be adjusted. A manufacturing method of the LED device is also disclosed.

Abstract translation: 发光二极管（LED）装置包括衬底和设置在衬底的表面上的外延层。 凹陷设置在LED器件的侧壁上，反射层设置在凹陷的至少一部分上。 通过设置在LED器件的侧壁的凹陷处的反射层，可以减少由衬底和外延层的界面引起的光损失，可以减少由衬底吸收的光，并且光的角度 可以调节从LED器件退出。 还公开了LED器件的制造方法。

公开(公告)号：US07301272B2

公开(公告)日：2007-11-27

申请号：US11105402

申请日：2005-04-14

Applicant: Chang-Hsin Chu ,  Kuo-Hui Yu Chu ,  Shi-Ming Chen

Inventor： Chang-Hsin Chu ,  Kuo-Hui Yu Chu ,  Shi-Ming Chen

IPC: H01J1/62

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0016

Abstract: A lighting device and a method for manufacturing the same are described. First, a semiconductor layer of a first electrical property, an active layer and a semiconductor layer of a second electrical property are sequentially formed, and part of them are removed to form a mesa. A transparent contact layer is formed thereon, and thus forms a stack. Afterwards, a passivation layer is deposited on the stack and a first part of the semiconductor layer of the first electrical property adjacent to the stack. Part of the passivation layer is removed to expose part of the transparent contact layer. Then, an electrode of the second electrical property is formed on the exposed transparent contact layer. Afterwards, the electrode of the second electrical property is extended to the passivation layer on the first part of the semiconductor layer of the first electrical property to form a guard ring.

Abstract translation: 对照明装置及其制造方法进行说明。 首先，依次形成具有第一电特性的半导体层，有源层和第二电性质的半导体层，并且去除其中的一部分以形成台面。 在其上形成透明接触层，从而形成叠层。 之后，钝化层沉积在堆叠上，并且与堆叠相邻的第一电性质的半导体层的第一部分被沉积。 去除钝化层的一部分以暴露部分透明接触层。 然后，在露出的透明接触层上形成第二电性质的电极。 之后，第二电性能的电极延伸到第一电性能的半导体层的第一部分上的钝化层以形成保护环。

公开(公告)号：US08445928B2

公开(公告)日：2013-05-21

申请号：US12567806

申请日：2009-09-28

Applicant: Shi-Ming Cheng ,  Wen-Liang Li ,  Chang-Hsin Chu ,  Hsing-Mao Wang

Inventor： Shi-Ming Cheng ,  Wen-Liang Li ,  Chang-Hsin Chu ,  Hsing-Mao Wang

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/005 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) light source module is described, comprising: a heat conduction substrate, wherein a surface of the heat conduction substrate includes a plurality of recesses; a plurality of light-emitting diode chips respectively disposed in the recesses; an insulation layer disposed on the surface of the heat conduction substrate outside of the recesses; an electric conduction layer disposed on the insulation layer, wherein the light-emitting diode chips are electrically connected to the electric conduction layer; and an encapsulation layer covering the light-emitting diode chips, the electric conduction layer and the insulation layer.

Abstract translation: 描述了一种发光二极管（LED）光源模块，包括：导热基板，其中所述导热基板的表面包括多个凹部; 分别设置在所述凹部中的多个发光二极管芯片; 绝缘层，其设置在所述凹部的外部的所述导热基板的表面上; 设置在所述绝缘层上的导电层，其中所述发光二极管芯片电连接到所述导电层; 以及覆盖发光二极管芯片，导电层和绝缘层的封装层。

公开(公告)号：US07939834B2

公开(公告)日：2011-05-10

申请号：US12126482

申请日：2008-05-23

Applicant: Shi-Ming Chen ,  Chang-Hsin Chu

Inventor： Shi-Ming Chen ,  Chang-Hsin Chu

IPC: H01L27/15

CPC classification number: H01L33/642 ,  H01L33/20

Abstract: A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer.

Abstract translation: 发光器件包括具有外延形成表面和与外延形成表面相对的后表面的衬底，所述衬底形成有从后表面凹陷的凹部，所述后表面具有限定凹部的凹部 和从凹部向外延伸的平面部分; 外延层; 形成在基板的背面的平面部和凹部的连续散热层; 以及与外延层电连接的第一和第二电极。

公开(公告)号：US20090159899A1

公开(公告)日：2009-06-25

申请号：US12126482

申请日：2008-05-23

Applicant: Shi-Ming Chen ,  Chang-Hsin Chu

Inventor： Shi-Ming Chen ,  Chang-Hsin Chu

IPC: H01L33/00

CPC classification number: H01L33/642 ,  H01L33/20

Abstract: A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer.

Abstract translation: 发光器件包括具有外延形成表面和与外延形成表面相对的后表面的衬底，所述衬底形成有从后表面凹陷的凹部，所述后表面具有限定凹部的凹部 和从凹部向外延伸的平面部分; 外延层; 形成在基板的背面的平面部和凹部的连续散热层; 以及与外延层电连接的第一和第二电极。