摘要:
Disclosed is a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample. The CMP system includes a polishing table, a sample carrier arranged to hold the sample over the polishing table, and an eddy probe. The polishing table and sample carrier are arranged to receive a polishing agent between the sample and the polishing table and to polish the sample by moving the polishing table and the sample carrier relative to each other. The eddy probe is arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system further includes an optical measurement device arranged to be operable to obtain a measurement of the sample while the sample is being polished. The CMP system also has a memory and a processor coupled with the memory. The processor and memory are adapted for operating the eddy probe and optical measurement device.
摘要:
Disclosed is a self-clearing objective for directing a beam towards a sample and clearing away debris from an optical viewing path adjacent to the sample. The self-clearing objective includes an optical element and a substantially transparent fluid flowing between the optical element and the sample such that at least a portion adjacent to the sample is substantially cleared of debris. The optical element and the fluid cooperatively direct the beam towards the sample. This self-clearing objective may be coupled with various measurement devices to measure various characteristics of samples having debris that prevents clear optical measurements. Additionally, the measurement device may be integrated with or coupled to various sample processing systems so that the relevant process may be clearly monitored.
摘要:
Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.
摘要:
Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.
摘要:
An overlay target with gratings thereon is illuminated and radiation scattered by the target is imaged onto detectors. A phase difference is then detected between the outputs of the detectors to find the mis-alignment error. In another aspect, an overlay target with gratings or box-in-box structures is illuminated and radiation scattered by the target is imaged onto detectors located away from the specular reflection direction of the illumination in a dark field detection scheme. Medium numerical aperture optics may be employed for collecting the radiation from the overlay target in a bright or dark field configuration so that the system has a larger depth of focus and so that the two structures of the target at different elevations can be measured accurately at the same time. Analytical functions are constructed for the grating type targets. By finding the phase difference between the two gratings at different elevations, misalignment errors can be detected. Analytical functions are constructed as a model for box-in-box type targets where data points away from the edges of the box or bars can be used in the curve fitting. Symmetrical functions are employed to further reduce noise.
摘要:
Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.
摘要:
Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.
摘要:
Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.
摘要:
A periodic structure is illuminated by polychromatic electromagnetic radiation. Radiation from the structure is collected and divided into two rays having different polarization states. The two rays are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a poly chromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam. Radiation that has passed through the element is detected when the plane of polarization is at the two or more positions so that one or more parameters of the periodic structure may be derived from the detected signals. At least one of the orientations of the plane of polarization is substantially stationary when the detection takes place. To have as small a footprint as possible, one employs an optical device that includes a first element directing a polychromatic beam of electromagnetic radiation to the structure and a second optical element collecting radiation from the structure where the two elements form an integral unit or are attached together to form an integrated unit. To reduce the footprint, the measurement instrument and the wafer are both moved. In one embodiment, both the apparatus and the wafer undergo translational motion transverse to each other. In a different arrangement, one of the two motions is translational and the other is rotational. Any one of the above-described embodiments may be included in an integrated processing and detection apparatus which also includes a processing system processing the sample, where the processing system is responsive to the output of any one of the above embodiments for adjusting a processing parameter.
摘要:
A surface of the component in MEMS is illuminated by an illumination beam and the reflected beam is collected and detected by a position sensitive detector or photo detector array. As the surface is tilted about a pivot or about X and Y axes, the change in position of the collected beam is detected for characterizing the mechanical and optical properties of MEMS.