公开(公告)号：US20120235158A1

公开(公告)日：2012-09-20

申请号：US13482851

申请日：2012-05-29

申请人： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

发明人： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

IPC分类号： H01L33/40

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US20100163887A1

公开(公告)日：2010-07-01

申请号：US12623990

申请日：2009-11-23

申请人： Kwang Choong KIM ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Kwang Choong KIM ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US20120104424A1

公开(公告)日：2012-05-03

申请号：US13345348

申请日：2012-01-06

申请人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

发明人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

IPC分类号： H01L33/08 ,  H01L33/60

CPC分类号： H01L33/007 ,  H01L27/156

摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

摘要翻译： 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

公开(公告)号：US20100163900A1

公开(公告)日：2010-07-01

申请号：US12624011

申请日：2009-11-23

申请人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

发明人： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/007 ,  H01L27/156

摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

摘要翻译： 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

公开(公告)号：US20090242870A1

公开(公告)日：2009-10-01

申请号：US12193588

申请日：2008-08-18

申请人： Gyu Beom KIM ,  Sang Joon LEE ,  Chang Suk HAN ,  Kwang Choong KIM

发明人： Gyu Beom KIM ,  Sang Joon LEE ,  Chang Suk HAN ,  Kwang Choong KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.