摘要:
Apparatus and method for thermally controlled processing of microelectronic workpieces with liquids. An apparatus in accordance with and embodiment of the invention includes a process vessel configured to carry a processing liquid, such as an electroless processing liquid. The vessel has a thermally transmissive wall for transferring heat to and/or from the processing liquid within. A heat transfer device, such as a reservoir that receives processing liquid spilling over from the process vessel, transfers heat to or from the processing liquid within the process vessel. The heat transfer device can also transfer heat to or from an internal or external heat source, such as a conduit carrying a heat transfer fluid, or an electrical resistance heater. The interaction between the microelectronic workpiece and the processing liquid can be further controlled by controlling the rate at which the microelectronic workpiece rotates and/or the manner in which the microelectronic workpiece is introduced to and/or withdrawn from the processing liquid.
摘要:
A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The second electrode may move with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.
摘要:
A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.
摘要:
An electro-chemical processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.
摘要:
A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first and/or second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal, and the second electrode may move along with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.
摘要:
A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.
摘要:
A processing container (610) for providing a flow of a processing fluid during immersion processing of at least one surface of a microelectronic workpiece is set forth. The processing container comprises a principal fluid flow chamber (505) providing a flow of processing fluid to at least one surface of the workpiece and a plurality of nozzles (535) disposed to provide a flow of processing fluid to the principal fluid flow chamber. The plurality of nozzles are arranged and directed to provide vertical and radial fluid flow components that combine to generate a substantially uniform normal flow component radially across the surface of the workpiece. An exemplary apparatus using such a processing container is also set forth that is particularly adapted to carry out an electroplating process. In accordance with a further aspect of the present disclosure, an improved fluid removal path (640) is provided for removing fluid from a principal fluid flow chamber during immersion processing of a microelectronic workpiece.
摘要:
In a workpiece processor, a head is moveable onto a bowl to form a process chamber. A workpiece can be cleaned in the processor by immersing the workpiece into a liquid bath in the bowl and then boiling the liquid. Vacuum may be applied to the chamber to reduce the pressure within the chamber, thereby reducing the boiling temperature of the liquid and allowing processing at lower temperatures. In a separate method for prewetting a workpiece, a humid gas is provided into the process chamber and condenses on the workpiece. In another separate method for wetting a workpiece, liquid water is provided into the bowl, with the workpiece above the liquid water. Water vapor is created in the process chamber by applying vacuum to the process chamber. The vapor wets the workpiece. The workpiece is then further wetted by submerging the workpiece into the liquid water.
摘要:
A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also related to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.
摘要:
An electro-chemical processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.