公开(公告)号：US08852417B2

公开(公告)日：2014-10-07

申请号：US13406387

申请日：2012-02-27

申请人： Rajesh Baskaran ,  Robert W. Batz, Jr. ,  Bioh Kim ,  Tom L. Ritzdorf ,  John Lee Klocke ,  Kyle M. Hanson

发明人： Rajesh Baskaran ,  Robert W. Batz, Jr. ,  Bioh Kim ,  Tom L. Ritzdorf ,  John Lee Klocke ,  Kyle M. Hanson

IPC分类号： C25D17/02 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  C25D17/00 ,  C25F3/02 ,  C25D5/02 ,  C25D3/38 ,  H05K3/42

CPC分类号： C25D5/028 ,  C25D3/12 ,  C25D3/20 ,  C25D3/30 ,  C25D3/34 ,  C25D3/38 ,  C25D3/46 ,  C25D3/54 ,  C25D5/022 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25F3/02 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H05K3/423

摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. Some of the described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.

摘要翻译： 描述了利用第一处理流体和对电极对微特征工件进行电解处理的工艺和系统。 使用第一处理流体，对电极，第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。 阴离子可渗透阻挡层将第一处理流体与第二处理流体分离，同时允许某些阴离子物质在两种流体之间转移。 所描述的一些方法中的一些在反复电镀循环中产生沉积物，其显示出所需范围内的电阻率值。

公开(公告)号：US20060260946A1

公开(公告)日：2006-11-23

申请号：US11414535

申请日：2006-04-28

申请人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

发明人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

IPC分类号： C25D5/02

CPC分类号： C25F3/02 ,  C25D3/02 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25F7/00 ,  H01L21/2885

摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

摘要翻译： 描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。 使用第一处理流体，阳极，第二处理流体和阳离子可渗透阻挡层对微特征工件进行电解处理。 阳离子可渗透阻隔层将第一处理流体与第二处理流体分离，同时允许某些阳离子物质在两种流体之间转移。 所描述的方法在反复电镀循环中产生沉积物，其在所需范围内具有沉积性质（例如电阻率）。

公开(公告)号：US20060237323A1

公开(公告)日：2006-10-26

申请号：US11414145

申请日：2006-04-28

申请人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

发明人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

IPC分类号： C25D5/02

CPC分类号： C25D7/12 ,  C25D5/00 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/02 ,  C25D21/12

摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

公开(公告)号：US20060084264A1

公开(公告)日：2006-04-20

申请号：US11292380

申请日：2005-11-23

申请人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

发明人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

摘要翻译： 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘附的合适方法包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

公开(公告)号：US20060079084A1

公开(公告)日：2006-04-13

申请号：US11286007

申请日：2005-11-23

申请人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

发明人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC分类号： C25D5/34 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

摘要翻译： 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

公开(公告)号：US20060079083A1

公开(公告)日：2006-04-13

申请号：US11285993

申请日：2005-11-23

申请人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

发明人： Rajesh Baskaran ,  Bioh Kim ,  Linlin Chen ,  Lyndon Graham

IPC分类号： C25D5/34 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C18/1605 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76885 ,  H01L2221/1089

摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.

摘要翻译： 本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。 因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

公开(公告)号：US20080264774A1

公开(公告)日：2008-10-30

申请号：US11740117

申请日：2007-04-25

申请人： Rajesh Baskaran ,  Dakin Fulton

发明人： Rajesh Baskaran ,  Dakin Fulton

IPC分类号： C23C14/00

CPC分类号： C23C14/025 ,  C23C14/0641 ,  C25D5/54

摘要： Metal seed layers and/or barrier layers are treated to render them more suitable for subsequent electrochemical deposition of metals thereon. The processes employ thermal techniques to reduce metal oxides that have formed on the surface of the seed layers and/or barrier layers.

摘要翻译： 处理金属种子层和/或阻挡层以使它们更适合于其上的金属的随后的电化学沉积。 该方法采用热技术来减少在种子层和/或阻挡层的表面上形成的金属氧化物。

公开(公告)号：US07252714B2

公开(公告)日：2007-08-07

申请号：US10295302

申请日：2002-11-15

申请人： Kyle M. Hanson ,  Robert W. Batz, Jr. ,  Rajesh Baskaran ,  Nolan Zimmerman ,  Zhongmin Hu ,  Gregory J. Wilson ,  Paul R. McHugh

发明人： Kyle M. Hanson ,  Robert W. Batz, Jr. ,  Rajesh Baskaran ,  Nolan Zimmerman ,  Zhongmin Hu ,  Gregory J. Wilson ,  Paul R. McHugh

IPC分类号： B05C3/00

CPC分类号： H01L21/6723 ,  C23C18/1676 ,  H01L21/67109 ,  Y10T137/0318

摘要： Apparatus and method for thermally controlled processing of microelectronic workpieces with liquids. An apparatus in accordance with and embodiment of the invention includes a process vessel configured to carry a processing liquid, such as an electroless processing liquid. The vessel has a thermally transmissive wall for transferring heat to and/or from the processing liquid within. A heat transfer device, such as a reservoir that receives processing liquid spilling over from the process vessel, transfers heat to or from the processing liquid within the process vessel. The heat transfer device can also transfer heat to or from an internal or external heat source, such as a conduit carrying a heat transfer fluid, or an electrical resistance heater. The interaction between the microelectronic workpiece and the processing liquid can be further controlled by controlling the rate at which the microelectronic workpiece rotates and/or the manner in which the microelectronic workpiece is introduced to and/or withdrawn from the processing liquid.

摘要翻译： 用液体对微电子工件进行热处理的装置和方法。 根据本发明的实施例的装置包括配置成承载诸如无电处理液体的处理液体的处理容器。 容器具有用于将热量传递到和/或内部的处理液体的热传递壁。 传热装置，例如容纳从处理容器溢出的处理液体的储存器，将热量传递到处理容器内或从处理容器内的处理液体。 传热装置还可以将热量传递到内部或外部热源，例如承载传热流体的导管或电阻加热器。 通过控制微电子工件旋转的速度和/或微电子工件被引入和/或从处理液中取出的方式，可以进一步控制微电子工件和处理液之间的相互作用。

公开(公告)号：US20070068820A1

公开(公告)日：2007-03-29

申请号：US11416659

申请日：2006-05-03

申请人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

发明人： Rajesh Baskaran ,  Robert Batz ,  Bioh Kim ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

IPC分类号： C25D21/06

CPC分类号： C25D7/123 ,  C25D3/02 ,  C25D3/38 ,  C25D5/022 ,  C25D17/001 ,  C25D17/002 ,  C25F3/02 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H05K3/423

摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.

摘要翻译： 描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。 使用第一处理流体，阳极，第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。 阴离子可渗透阻挡层将第一处理流体与第二处理流体分离，同时允许某些阴离子物质在两种流体之间转移。 所描述的过程在反复电镀循环中产生沉积物，其在所期望的范围内显示电阻率值。

公开(公告)号：US20060189129A1

公开(公告)日：2006-08-24

申请号：US11413228

申请日：2006-04-28

申请人： Rajesh Baskaran ,  Bioh Kim ,  Robert Batz ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

发明人： Rajesh Baskaran ,  Bioh Kim ,  Robert Batz ,  Tom Ritzdorf ,  John Klocke ,  Kyle Hanson

IPC分类号： C25D5/34 ,  H01L21/44

CPC分类号： C25D3/02 ,  C25D5/38 ,  C25D5/54 ,  C25D7/123 ,  C25D17/00 ,  C25D17/001 ,  C25D17/002 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885

摘要： The methods described are directed to processes for producing structures containing metallized features for use in microelectronic workpieces. The processes treat a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The processes described modify an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process. According to the processes described metallized features are formed on the treated barrier layers using processes that employ ion permeable barriers.

摘要翻译： 所描述的方法涉及用于生产用于微电子工件的包含金属化特征的结构的方法。 该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。 用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理，或阻挡层和金属化特征之间的结合层的沉积。 所描述的方法改变了阻挡层的外表面，使得其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。 根据所述方法，使用采用离子可渗透屏障的方法在经处理的阻挡层上形成金属化特征。