公开(公告)号：US20070085118A1

公开(公告)日：2007-04-19

申请号：US11582315

申请日：2006-10-18

申请人： Kyounei Yasuda

发明人： Kyounei Yasuda

IPC分类号： H01L31/113

CPC分类号： H01L27/124 ,  G02F2001/136295 ,  H01L29/458 ,  H01L29/4908

摘要： A LCD device prevents corrosion of the transparent conductive layers and contact resistance increase without arising the step coverage degradation due to the thickness increase of the interconnection layer, the step coverage degradation due to the formation of undercut portions, and productivity reduction and fabrication cost increase. A first interconnection line comprising a patterned Al or Al alloy layer is disposed on or over an insulating plate. A first insulating layer is formed to cover the first interconnection line to have a contact hole exposing a part of the first interconnection line. A first conductive material made of a plated metal is in contact with the exposed part of the first interconnection line in the contact hole. A first transparent conductive layer is in contact with the first conductive material. The first transparent conductive layer is electrically connected to the first interconnection line by way of the first conductive material.

摘要翻译： LCD装置防止透明导电层的腐蚀和接触电阻增加，而不会由于互连层的厚度增加而导致台阶覆盖率降低，由于形成底切部分而导致的台阶覆盖率降低，并且生产率降低和制造成本增加。 包括图案化的Al或Al合金层的第一互连线设置在绝缘板上或上方。 形成第一绝缘层以覆盖第一互连线以具有暴露第一互连线的一部分的接触孔。 由电镀金属制成的第一导电材料与接触孔中的第一互连线的暴露部分接触。 第一透明导电层与第一导电材料接触。 第一透明导电层通过第一导电材料电连接到第一互连线。

公开(公告)号：US07341898B2

公开(公告)日：2008-03-11

申请号：US11384342

申请日：2006-03-21

申请人： Hiroaki Tanaka ,  Kyounei Yasuda ,  Seiji Suzuki

发明人： Hiroaki Tanaka ,  Kyounei Yasuda ,  Seiji Suzuki

IPC分类号： H01L21/84

CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

摘要： A thin film transistor circuit device and the production method thereof is demanded for a thin film transistor circuit device, which contains wiring having a structure of an aluminum alloy in a lower layer and a molybdenum alloy in an upper layer, wherein corrosion in air of the molybdenum alloy does not proceed easily. A thin film transistor circuit device which exposes a portion of wiring covered with an insulating film that connects thin film transistors of a main circuit region formed on a center portion of a substrate to a protection circuit region formed on an outer periphery of the substrate, which contains on the exposed surface a terminal which is formed of terminal electrode metal, wherein an uppermost surface of the wiring is a molybdenum alloy comprising niobium.

摘要翻译： 薄膜晶体管电路器件及其制造方法要求薄膜晶体管电路器件，其包含具有下层中的铝合金结构的布线和上层的钼合金，其中在 钼合金不容易进行。 一种薄膜晶体管电路器件，其使覆盖有绝缘膜的布线的一部分露出，所述绝缘膜将形成在基板的中心部分上的主电路区域的薄膜晶体管连接到形成在基板的外周上的保护电路区域， 在暴露的表面上包含由端子电极金属形成的端子，其中布线的最上表面是包含铌的钼合金。

公开(公告)号：US20060175611A1

公开(公告)日：2006-08-10

申请号：US11384342

申请日：2006-03-21

申请人： Hiroaki Tanaka ,  Kyounei Yasuda ,  Seiji Suzuki

发明人： Hiroaki Tanaka ,  Kyounei Yasuda ,  Seiji Suzuki

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

摘要： A thin film transistor circuit device and the production method thereof is demanded for a thin film transistor circuit device, which contains wiring having a structure of an aluminum alloy in a lower layer and a molybdenum alloy in an upper layer, wherein corrosion in air of the molybdenum alloy does not proceed easily. A thin film transistor circuit device which exposes a portion of wiring covered with an insulating film that connects thin film transistors of a main circuit region formed on a center portion of a substrate to a protection circuit region formed on an outer periphery of the substrate, which contains on the exposed surface a terminal which is formed of terminal electrode metal, wherein an uppermost surface of the wiring is a molybdenum alloy comprising niobium.

摘要翻译： 薄膜晶体管电路器件及其制造方法要求薄膜晶体管电路器件，其包含具有下层中的铝合金结构的布线和上层的钼合金，其中在 钼合金不容易进行。 一种薄膜晶体管电路器件，其使覆盖有绝缘膜的布线的一部分露出，所述绝缘膜将形成在基板的中心部分上的主电路区域的薄膜晶体管连接到形成在基板的外周上的保护电路区域， 在暴露的表面上包含由端子电极金属形成的端子，其中布线的最上表面是包含铌的钼合金。

公开(公告)号：US07499119B2

公开(公告)日：2009-03-03

申请号：US11582315

申请日：2006-10-18

申请人： Kyounei Yasuda

发明人： Kyounei Yasuda

IPC分类号： G02F1/136

CPC分类号： H01L27/124 ,  G02F2001/136295 ,  H01L29/458 ,  H01L29/4908

摘要： A LCD device prevents corrosion of the transparent conductive layers and contact resistance increase without arising the step coverage degradation due to the thickness increase of the interconnection layer, the step coverage degradation due to the formation of undercut portions, and productivity reduction and fabrication cost increase. A first interconnection line comprising a patterned Al or Al alloy layer is disposed on or over an insulating plate. A first insulating layer is formed to cover the first interconnection line to have a contact hole exposing a part of the first interconnection line. A first conductive material made of a plated metal is in contact with the exposed part of the first interconnection line in the contact hole. A first transparent conductive layer is in contact with the first conductive material. The first transparent conductive layer is electrically connected to the first interconnection line by way of the first conductive material.

摘要翻译： LCD装置防止透明导电层的腐蚀和接触电阻增加，而不会由于互连层的厚度增加而导致台阶覆盖率降低，由于形成底切部分而导致的台阶覆盖率降低，并且生产率降低和制造成本增加。 包括图案化的Al或Al合金层的第一互连线设置在绝缘板上或上方。 形成第一绝缘层以覆盖第一互连线以具有暴露第一互连线的一部分的接触孔。 由电镀金属制成的第一导电材料与接触孔中的第一互连线的暴露部分接触。 第一透明导电层与第一导电材料接触。 第一透明导电层通过第一导电材料电连接到第一互连线。

公开(公告)号：US07105896B2

公开(公告)日：2006-09-12

申请号：US10895404

申请日：2004-07-21

申请人： Hiroaki Tanaka ,  Kyounei Yasuda ,  Seiji Suzuki

发明人： Hiroaki Tanaka ,  Kyounei Yasuda ,  Seiji Suzuki

IPC分类号： H01L27/12

CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

摘要： A thin film transistor circuit device and the production method thereof is demanded for a thin film transistor circuit device, which contains wiring having a structure of an aluminum alloy in a lower layer and a molybdenum alloy in an upper layer, wherein corrosion in air of the molybdenum alloy does not proceed easily. A thin film transistor circuit device which exposes a portion of wiring covered with an insulating film that connects thin film transistors of a main circuit region formed on a center portion of a substrate to a protection circuit region formed on an outer periphery of the substrate, which contains on the exposed surface a terminal which is formed of terminal electrode metal, wherein an uppermost surface of the wiring is a molybdenum alloy comprising niobium.

摘要翻译： 薄膜晶体管电路器件及其制造方法要求薄膜晶体管电路器件，其包含具有下层中的铝合金结构的布线和上层的钼合金，其中在 钼合金不容易进行。 一种薄膜晶体管电路器件，其使覆盖有绝缘膜的布线的一部分露出，所述绝缘膜将形成在基板的中心部分上的主电路区域的薄膜晶体管连接到形成在基板的外周上的保护电路区域， 在暴露的表面上包含由端子电极金属形成的端子，其中布线的最上表面是包含铌的钼合金。

公开(公告)号：US08125606B2

公开(公告)日：2012-02-28

申请号：US12200954

申请日：2008-08-29

申请人： Kyounei Yasuda ,  Futoshi Nakanishi

发明人： Kyounei Yasuda ,  Futoshi Nakanishi

IPC分类号： G02F1/1345

CPC分类号： G02F1/13452

摘要： A display device includes a first substrate having a group of terminal electrodes on one side thereof, at least one of the terminal electrodes forming a branched electrode with an isolation region extending along an elongating direction of each the terminal electrode and a second substrate opposing the first substrate such that the terminal electrodes are exposed from an overlapping area of the first substrate and the second substrate.

摘要翻译： 一种显示装置，包括在其一侧具有一组端子电极的第一基板，所述端子电极中的至少一个形成分支电极，所述分支电极具有沿每个所述端子电极的延伸方向延伸的隔离区域，以及与所述第一基板相对的第二基板 基板，使得端子电极从第一基板和第二基板的重叠区域露出。

公开(公告)号：US20090059153A1

公开(公告)日：2009-03-05

申请号：US12200954

申请日：2008-08-29

申请人： Kyounei Yasuda ,  Futoshi Nakanishi

发明人： Kyounei Yasuda ,  Futoshi Nakanishi

IPC分类号： G02F1/1345

CPC分类号： G02F1/13452

摘要： A display device includes a first substrate having a group of terminal electrodes on one side thereof, at least one of the terminal electrodes forming a branched electrode with an isolation region extending along an elongating direction of each the terminal electrode and a second substrate opposing the first substrate such that the terminal electrodes are exposed from an overlapping area of the first substrate and the second substrate.

摘要翻译： 一种显示装置，包括在其一侧具有一组端子电极的第一基板，所述端子电极中的至少一个形成分支电极，所述分支电极具有沿每个所述端子电极的延伸方向延伸的隔离区域，以及与所述第一基板相对的第二基板 基板，使得端子电极从第一基板和第二基板的重叠区域露出。

公开(公告)号：US06759283B2

公开(公告)日：2004-07-06

申请号：US10145120

申请日：2002-05-15

申请人： Kyounei Yasuda ,  Satoshi Ihida ,  Jukoh Funaki ,  Manabu Oyama ,  Yoshikazu Hatazawa

发明人： Kyounei Yasuda ,  Satoshi Ihida ,  Jukoh Funaki ,  Manabu Oyama ,  Yoshikazu Hatazawa

IPC分类号： H01L2100

CPC分类号： H01L29/78609 ,  H01L27/1214 ,  H01L29/66765

摘要： A method of fabricating a thin film transistor, includes the steps of (a) forming a gate electrode on an electrically insulating substrate, (b) forming a gate insulating film on the electrically insulating substrate, covering the gate electrode therewith, (c) forming a semiconductor layer on the gate insulating film above the gate electrode, (d) forming source and drain electrodes both making electrical contact with the semiconductor layer, (e) patterning the semiconductor layer into a channel, (f) applying first plasma to the semiconductor layer through the use of a first gas, and (g) applying second plasma to the semiconductor layer through the use of a second gas, and (h) forming an electrically insulating film covering the semiconductor layer therewith.

摘要翻译： 一种制造薄膜晶体管的方法包括以下步骤：（a）在电绝缘基板上形成栅电极，（b）在电绝缘基板上形成栅绝缘膜，覆盖栅电极，（c）形成 在栅极电极上的栅极绝缘膜上的半导体层，（d）形成与半导体层电接触的源极和漏极，（e）将半导体层图案化成沟道，（f）将第一等离子体施加到半导体 并且（g）通过使用第二气体将第二等离子体施加到半导体层，以及（h）形成覆盖半导体层的电绝缘膜。

公开(公告)号：US07564531B2

公开(公告)日：2009-07-21

申请号：US11375112

申请日：2006-03-15

申请人： Kyounei Yasuda ,  Seiji Suzuki

发明人： Kyounei Yasuda ,  Seiji Suzuki

IPC分类号： G02F1/1345

CPC分类号： G02F1/136209 ,  G02F1/133305 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1218 ,  H01L27/124

摘要： An active matrix substrate or TFT substrate is provided with a lower layer wiring with a groove wiring structure covering surroundings of a copper layer with a barrier metal film is formed by forming a groove at an insulating substrate and depositing the barrier metal film and the copper layer in this groove. This groove wiring structure is used for a TFT substrate of a liquid crystal display (LCD) device. It is possible to manufacture an LCD device with large size, high density, a large aperture ratio and in which the disclination defects originating from a different in level of the lower layer wiring and an occurrence of disconnection failures in an upper layer wiring are suppressed.

摘要翻译： 有源矩阵基板或TFT基板设置有下层布线，其中通过在绝缘基板上形成沟槽并沉积阻挡金属膜和铜层而形成覆盖具有阻挡金属膜的铜层周围的沟槽布线结构 在这个槽里 该槽布线结构用于液晶显示（LCD）装置的TFT基板。 可以制造大尺寸，高密度，大孔径比的LCD装置，并且抑制源于下层布线的不同级别的旋错缺陷以及上层布线中的断开故障的发生。

公开(公告)号：US20060209222A1

公开(公告)日：2006-09-21

申请号：US11375112

申请日：2006-03-15

申请人： Kyounei Yasuda ,  Seiji Suzuki

发明人： Kyounei Yasuda ,  Seiji Suzuki

IPC分类号： G02F1/136

CPC分类号： G02F1/136209 ,  G02F1/133305 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1218 ,  H01L27/124

摘要： An active matrix substrate or TFT substrate is provided with a lower layer wiring with a groove wiring structure covering surroundings of a copper layer with a barrier metal film is formed by forming a groove at an insulating substrate and depositing the barrier metal film and the copper layer in this groove. This groove wiring structure is used for a TFT substrate of a liquid crystal display (LCD) device. It is possible to manufacture an LCD device with large size, high density, a large aperture ratio and in which the disclination defects originating from a different in level of the lower layer wiring and an occurrence of disconnection failures in an upper layer wiring are suppressed.

摘要翻译： 有源矩阵基板或TFT基板设置有下层布线，其中通过在绝缘基板上形成沟槽并沉积阻挡金属膜和铜层而形成覆盖具有阻挡金属膜的铜层周围的沟槽布线结构 在这个槽里 该槽布线结构用于液晶显示（LCD）装置的TFT基板。 可以制造大尺寸，高密度，大孔径比的LCD装置，并且抑制源于下层布线的不同级别的旋错缺陷以及上层布线中的断开故障的发生。