摘要:
Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.
摘要:
Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.
摘要:
A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.
摘要:
A silicon based optical modulator apparatus can include a lateral slab on an optical waveguide, the lateral slab protruding beyond side walls of the optical waveguide so that a portion of the optical waveguide protrudes from the lateral slab towards a substrate.
摘要:
Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.
摘要:
A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
摘要:
A speckle reduction laser and a laser display apparatus having the speckle reduction laser are provided. The speckle reduction laser includes a semiconductor unit that comprises an active layer and emits laser light through a first side surface thereof by resonating light generated from the active layer, and a vibration mirror unit disposed adjacent to a second side surface of the semiconductor unit. The laser further includes a mirror, and the resonance of the laser light is generated between the first side surface of the semiconductor unit and the mirror, and a resonance mode of the laser light is changed according to the vibration of the mirror.
摘要:
Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.
摘要:
A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.
摘要:
Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.