摘要:
Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.
摘要:
Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.
摘要:
Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.
摘要:
Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
摘要:
A phosphor represented by Formula 1: (A1−(a+b)EuaLnb)1−x(B1−cMnc)2Al(6+b−2x)Si(9−b+2x)O30 Formula 1 wherein A includes at least one element selected from the group consisting of Ca, Sr and Ba, Ln includes at least one metal selected from the group consisting of a trivalent rare earth metal, B includes at least one element selected from the group consisting of Mg, Zn, Ge and Co, a is greater than 0 and equal to or less than about 0.5, b is greater than 0 and equal to or less than about 0.25, c is greater than 0 and less than about 0.8, and x is 0 to about 0.2. Also a white light emitting device including the phosphor.
摘要:
A method of forming a phase change layer using a Ge compound and a method of manufacturing a phase change memory device using the same are provided. The method of manufacturing a phase change memory device included supplying a first precursor on a lower layer on which the phase change layer is to be formed, wherein the first precursor is a bivalent precursor including germanium (Ge) and having a cyclic structure. The first precursor may be a cyclic germylenes Ge-based compound or a macrocyclic germylenes Ge-based, having a Ge—N bond. The phase change layer may be formed using a MOCVD method, cyclic-CVD method or an ALD method. The composition of the phase change layer may be controlled by a deposition pressure in a range of 0.001 torr-10 torr, a deposition temperature in a range of 150° C. to 350° C. and/or a flow rate of a reaction gas in the range of 0-1 slm.
摘要:
A rotation device of a buckle for use in an automobile seat belt is provided with a base having a plate-like shape to be mounted on a bottom surface of a main body and provided with a circular plate portion at its one end, the circular plate portion provided with a through hole formed therethrough, and a pair of side walls bent upwardly each of which has a lug bent inwardly to be integrally formed with the circular plate portion as well as the pair of side walls, a stalk whose one end is rotatably mounted on an upper surface of the circular plate portion of the base has a hole formed therethrough and a stopper portion formed around the end of the stalk and provided with a protrusion for being contacted with an inner surface of the side wall of the base and an abutment for limiting a rotation angle of the main body, the stalk having a protrusion for stopping a rotational movement, an elastic member whose one end is contacted to the protrusion for stopping a rotational movement and having an elasticity and a through hole formed therethrough, so that the elastic member provide a restoring force when the main body is rotated, a rivet inserted into through hole of the circular plate portion of the base, the holes of the stalk and the elastic spring, and a fixing cap having a hole 135a for receiving an upper portion of the rivet to fix the components therebetween, a lug formed at one side thereof to be engaged with the lug formed with the side walls of the base.
摘要:
A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te) onto a surface on which the phase change layer is to be formed. The phase change layer may be formed by CVD (e.g., MOCVD, cyclic-CVD) or ALD. The composition of the phase change layer may be varied by modifying the deposition pressure, deposition temperature, and/or supply rate of reaction gas. The deposition pressure may range from about 0.001-10 torr, the deposition temperature may range from about 150-350° C., and the supply rate of the reaction gas may range from about 0-1 slm. Additionally, the above phase change layer may be provided in a via hole and bounded by top and bottom electrodes to form a storage node.
摘要:
Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
摘要:
Disclosed is a seat belt buckle. The seat belt buckle comprises a body frame; a release button slidably coupled to the body frame for unlatching a seat belt tongue from the seat belt buckle; a locking lever capable of being pivotally rotated about wings by a predetermined angle; a slider for supporting and fixing the locking lever; and an ejector for pushing the tongue in a longitudinal direction which is a lengthwise direction of the body frame. The body frame has an arch-shaped supporting beam which is integrally formed with the body frame in a manner such that the supporting beam is erected in a vertical direction. The supporting beam serves to limit movement of the slider and increase structural rigidity of the seat belt buckle. The slider has a width which is greater than that of the body frame and possesses shock-absorbing means for increasing durability of the seat belt buckle. The slider is formed with inclined projections. The release button has at least two release projections which are formed with inclined surfaces which are in turn brought into contact with the inclined projections of the slider.