摘要:
Provided with a method of fabricating a 200-250 nm short-wavelength optoelectronic device, which has a combination of an optical device with a plurality of acceleration electrodes and a field emission device with a plurality of acceleration electrodes, from a semiconductor having a 5-6 eV energe band gap, based on a principle that an electron-hole pair is produced using a highly energetic electron which is injected from a field emission device, and short-wavelength photons are emitted when the electron recombines with the hole and confined in a quantum well to emit a light corresponding to the energy level of the quantum well, thereby eliminating the need of using dopants for forming n-p junctions in the semiconductor and achieving high efficiency in terms of energy because highly energetic electrons result in one or more electron-hole pairs.
摘要:
An effusion cell assembly for epitaxial apparatus is disclosed. The assembly includes an effusion cell incluing a growing material, a heater for supplying heats with the effusion cell to effuse the growing material, a supporting plate for supporting the heater, a bolt having one end connected to the supporting plate, a cell flange coupled to a lower flange of an adaptor for supporting the cell assembly, bellows fixed between the supporting plate and the cell flange including the bolt, and a control nut for expanding and contracting the bellows so as to separate only the cell assembly from a vacuum chamber with entire vacuum maintained in the vacuum chamber and local vacuum released in the cell assembly. The epitaxial apparatus further includes a control valve located between an entrance flange of the vacuum chamber and an upper adaptor flange of the adaptor for introducing and maintaining vacuum in the vacuum chamber.